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| RB731XN Diodes Schottky barrier diode RB731XN Applications General rectification Features 1) Small power mold type. (UMD6) 2) Low VF 3) High reliability External dimensions (Unit : mm) 0.25 0.1 2.00.2 Each lead has same dimension (5) (4) Land size figure 0.65 0.65 0.05 0.150.05 (6) 1.250.1 2.10.1 00.1 (1) 0.65 (2) 0.65 0.7 0.90.1 (3) 0.1Min 0.9 0.35 UMD6 1.30.1 Structure ROHM : UMD6 JEDEC : SOT-363 JEITA : SC-88 dot (year week factory) Taping dimensions (Unit : mm) 4.00.1 2.00.05 1.50.1 0 1.750.1 0.30.1 3.50.05 2.450.1 2.40.1 5.50.2 8.00.2 2.20.1 4.00.1 1.10.1 00.5 2.40.1 1.150.1 Absolute maximum ratings (Ta=25C) Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current Forward current surge peak (60Hz 1cyc.) Junction temperature Storage temperature Rating for each diode Io/3 Symbol VRM VR IO IFSM Tj Tstg Limits 40 40 30 200 125 -40 to +125 Unit V V mA mA C C Electrical characteristic (Ta=25C) Parameter Forward voltage Reverse current Capacitance between terminal Symbol VF IR Ct Min. - - - Typ. - - 2 Max. 0.37 1 - Unit V A pF Conditions IF=1mA VR=10V VR=1V, f=1MHz Rev.B 1.6 1/3 RB731XN Diodes Electrical characteristic curves 100 FORWARD CURRENT:IF(mA) REVERSE CURRENT:IR(uA) 1000 Ta=125 100 10 1 0.1 0.01 0.001 0 10 20 30 Ta=125 Ta=75 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 10 f=1MHz 10 Ta=75 1 Ta=-25 Ta=25 0.1 Ta=25 Ta=-25 1 0.01 0 100 200 300 400 500 600 700 800 900 1000 0.1 0 5 10 15 20 25 30 35 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS FORWARD VOLTAGEVF(mV) VF-IF CHARACTERISTICS REVERSE VOLTAGEVR(V) VR-IR CHARACTERISTICS 300 FORWARD VOLTAGE:VF(mV) REVERSE CURRENT:IR(nA) 1 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 VF DIPERSION MAP 10 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 290 280 270 260 AVE:267.4mV 250 Ta=25 IF=1mA n=30pcs 0.9 Ta=25 VR=10V n=30pcs 9 8 7 6 5 4 3 2 1 0 AVE:2.52pF Ta=25 f=1MHz VR=0V n=10pcs AVE:0.083nA IR DISPERSION MAP Ct DISPERSION MAP 20 PEAK SURGE FORWARD CURRENT:IFSM(A) Ifsm 1cyc 8.3ms 20 PEAK SURGE FORWARD CURRENT:IFSM(A) PEAK SURGE FORWARD CURRENT:IFSM(A) Ifsm 8.3ms 8.3ms 1cyc 10 9 8 7 6 5 4 3 2 1 0 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 Ifsm t 15 15 10 10 5 AVE:7.30A 0 5 0 IFSM DISPERSION MAP 1000 TRANSIENT THAERMAL IMPEDANCE:Rth (/W) 0.04 Rth(j-a) REVERSE POWER DISSIPATION:PR (W) FORWARD POWER DISSIPATION:Pf(W) 0.003 0.03 D=1/2 Sin(180) 100 Rth(j-c) Mounted on epoxy board IM=1mA IF=10mA 0.002 DC 0.02 DC 10 1ms time 300us 0.001 0.01 Sin(180) 1 0.001 0.00 10 TIME:t(s) Rth-t CHARACTERISTICS 0.1 1000 0.00 0.01 0.02 0.03 0.04 0.05 0 0 10 20 30 AVERAGE RECTIFIED FORWARD CURRENT Io(A) Io-Pf CHARACTERISTICS REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS Rev.B 2/3 RB731XN Diodes 0.1 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 0.1 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 0.08 0.06 0.04 0.02 Per chip 0A 0V t Io VR D=t/T VR=15V Tj=125 Per chip 0.08 0.06 0A 0V t Io VR D=t/T VR=15V Tj=125 DC D=1/2 T DC D=1/2 Sin(180) T 0.04 0.02 0 0 Sin(180) 0 0 25 50 75 100 125 AMBIENT TEMPERATURE:Ta() Derating Curve(Io-Ta) 25 50 75 100 CASE TEMPARATURE:Tc() Derating Curve(Io-Tc) 125 Rev.B 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1 |
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