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| SMD Schottky Barrier Diode COMCHIP www.comchip.com.tw CDBN0130 Io = 100mA VR = 30 Volt s Features Designed for mounting on small surface Extremely thin package Low stored charge Majority carrier conduction 0.126(3.20) 0.118(3.00) 0.020(0.50) Typ. 1206 (3216) Mechanical data Case: 1206(3216) Standard package, molded plastic Terminals: Solder plated, solderable per MIL-STD-750, method 2026. Polarity: Indicated by cathode band. Mounting position: Any. Weight: 0.0085 gram.(approximately) 0.010(R0.25) Typ. 0.063(1.60) 0.055(1.40) 0.043 (1.10) 0.035(0.90) Dimensions in inches and (millimeter) Maximum Rating ( at T A = 25 C unless otherwise noted ) Parameter Repetitive peak reverse voltage Reverse voltage Average forward current Forward current , surge peak Power dissipation Storage temperature Junction temperature 8.3 ms single half sine-wave superimposed on rate load ( JEDEC method ) Conditions Symbol Min Typ Max Unit VRRM VR Io IFSM 1000 PD TSTG Tj -40 -40 250 +125 +125 mW C C 35 30 100 V V mA mA Electrical Characteristics ( at T A = 25 C unless otherwise noted ) Parameter Forward voltage Reverse current Capacitance between terminals VR = 30 V f = 1MHz, and 10 VDC reverse voltage Conditions I F = 1 00 mA DC Symbol Min Typ Max Unit VF IR CT 10 0.44 30 V uA pF RDS0208008-C Page 1 SMD Schottky Barrier Diode COMCHIP www.comchip.com.tw RATING AND CHARACTERISTIC CURVES (CDBN0130) Fig. 1 - Forward characteristics 1000 1m Fig. 2 - Reverse characteristics Forward current (mA ) Reverse current ( A ) 125 C 100u 100 75 C 10u 10 5C 12 C 1u 25 C 1 0 0.1 0.2 0.3 0.4 0.5 0.6 25 C -25 C 75 100n 0 10 20 30 40 50 Forward voltage (V) Reverse voltage (V) Fig. 3 - Capacitance between terminals characteristics Capacitance between terminals (pF) 20 Fig. 4 - Current derating curve f = 1 MHz Ta = 25 C Average forward current ( % ) Mounting on glass epoxy PCBs 100 80 10 60 40 20 1 0 5 10 15 0 20 25 30 35 0 25 50 75 100 125 150 Reverse voltage (V) Ambient temperature ( C ) RDS0208008-C Page 2 |
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