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CMPT3646
NPN SILICON TRANSISTOR
Central
DESCRIPTION:
TM
Semiconductor Corp.
SOT-23 CASE MAXIMUM RATINGS (TA=25oC) Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCES VCEO VEBO IC PD TJ,Tstg JA
The CENTRAL SEMICONDUCTOR CMPT3646 type is an NPN Silicon Transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high current, ultra high speed switching applications. Marking code is C2R.
40 40 15 5.0 200 350 -65 to +150 357
UNITS V V V V mA mW
oC oC/W
ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted) SYMBOL ICES ICES BVCBO BVCES BVCEO BVEBO VCE(SAT) VCE(SAT) VCE(SAT) VCE(SAT) VBE(SAT) VBE(SAT) VBE(SAT) hFE hFE TEST CONDITIONS VCE=20V VCE=20V, TA=65oC IC=100A IC=10A IC=10mA IE=100A IC=30mA, IB=3.0mA IC=30mA, IB=3.0mA, TA=65oC IC=100mA, IB=10mA IC=300mA, IB=30mA IC=30mA, IB=3.0mA IC=100mA, IB=10mA IC=300mA, IB=30mA VCE=0.4V, IC=30mA VCE=0.5V, IC=100mA MIN MAX 0.5 3.0 UNITS A A V V V V V V V V V V V
40 40 15 5.0 0.20 0.30 0.28 0.50 0.95 1.20 1.70 120
0.75
30 25
170
SYMBOL hFE fT Cob Cib ton toff tS
TEST CONDITIONS MIN VCE=1.0V, IC=300mA 15 VCE=10V, IC=30mA, f=100MHz 350 VCB=5.0V, IE=0, f=1.0MHz VBE=0.5V, IC=0, f=1.0MHz VCC=10V, IC=300mA, IB1=30mA VCC=10V, IC=300mA, IB1=IB2=30mA VCC=10V, IC=IB1=IB2=10mA All dimensions in inches (mm).
MAX
UNITS MHz pF pF ns ns ns
5.0 8.0 18 28 18
LEAD CODE: 1) BASE 2) EMITTER 3) COLLECTOR
R2
171

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