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| PD - 93955A LOGIC LEVEL HEXFET(R) POWER MOSFET SURFACE MOUNT (SMD-0.5) Product Summary Part Number IRL5NJ024 BVDSS IRL5NJ024 55V, N-CHANNEL 55V RDS(on) 0.06 ID 17A Fifth Generation HEXFET(R) power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. These devices are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits. SMD-0.5 Features: n n n n n n n n n Logic Level Gate Drive Low RDS(on) Avalanche Energy Ratings Dynamic dv/dt Rating Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 10V, TC = 25C ID @ VGS = 10V, TC = 100C IDM PD @ TC = 25C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Package Mounting Surface Temperature Weight For footnotes refer to the last page 17 11 68 35 0.28 16 56 11 3.5 4.3 -55 to 150 300 (for 5 s) 2.6 Units A W W/C V mJ A mJ V/ns o C g www.irf.com 1 7/13/01 IRL5NJ024 Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient V(BR)DSS RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LS + LD Ciss Coss Crss Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance Input Capacitanc Output Capacitance Reverse Transfer Capacitance Min. 55 --- --- --- --- 1.0 6.5 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. Max. Units Conditions --- --- V VGS = 0V, ID = 250A 0.057 --- V/C Reference to 25C, ID = 1mA --- 0.060 VGS = 10V, ID = 11A --- 0.075 VGS = 5.0V, ID = 11A --- 0.105 VGS = 4.0V, ID = 9.0A --- 2.0 V VDS = VGS, ID = 250A --- --- S VDS = 25V, ID = 11 A --- 25 VDS = 55V, VGS = 0V A --- 250 VDS = 44V, VGS = 0V, TJ = 125C --- 100 VGS = 16V nA --- -100 VGS = -16V --- 15 ID = 11A --- 3.7 nC VDS = 44V --- 8.5 VGS = 5.0V --- 11 VDD = 28V --- 133 ID = 11A ns --- 35 RG = 12 --- 66 VGS = 5.0V 4.0 --- nH Measured from the center of drain pad to center of source pad 514 --- VGS = 0V, VDS = 25V 137 51 --- --- pF = 1.0MHz Source-Drain Diode Ratings and Characteristics Parameter IS ISM VSD t rr Q RR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min Typ Max Units -- -- -- -- -- -- -- -- -- -- 17 68 1.3 90 200 Test Conditions A V nS nC Tj = 25C, IS = 11A, VGS = 0V Tj = 25C, IF = 11A, di/dt 100A/s VDD 25V Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. Thermal Resistance Parameter RthJC Junction-to-Case Min Typ Max Units -- -- 3.57 C/W Test Conditions Note: Corresponding Spice and Saber models are available on the G&S Website. For footnotes refer to the last page 2 www.irf.com IRL5NJ024 1000 I D , Drain-to-Source Current (A) 100 I D , Drain-to-Source Current (A) VGS 15V 12V 10V 7.0V 5.0V 4.5V 2.7V BOTTOM 2.0V TOP 100 10 VGS 15V 12V 10V 7.0V 5.0V 4.5V 2.7V BOTTOM 2.0V TOP 10 1 1 2.0V 2.0V 0.1 0.01 0.1 20s PULSE WIDTH T = 25 C J 1 10 100 0.1 0.1 20s PULSE WIDTH T = 150 C J 1 10 100 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 TJ = 150 C 10 R DS(on) , Drain-to-Source On Resistance (Normalized) TJ = 25 C 2.5 ID = 17A I D , Drain-to-Source Current (A) 2.0 1.5 1.0 1 0.5 0.1 2.0 15 25V V DS = 50V 20s PULSE WIDTH 7.0 8.0 9.0 3.0 4.0 5.0 6.0 10.0 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRL5NJ024 1000 VGS , Gate-to-Source Voltage (V) 800 VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd 12 ID = 11A 10 VDS = 44V VDS = 27V VDS = 11V C, Capacitance (pF) 8 600 Ciss 6 400 4 200 C oss C rss 2 0 1 10 100 0 0 4 8 FOR TEST CIRCUIT SEE FIGURE 13 12 16 20 24 VDS , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 1000 OPERATION IN THIS AREA LIMITED BY R DS(on) ISD , Reverse Drain Current (A) TJ = 150 C 10 TJ = 25 C ID , Drain-to-Source Current (A) 100 10 100s 1 Tc = 25C Tj = 150C Single Pulse 0.1 1 10 VDS , Drain-toSource Voltage (V) 100 1ms 1 10ms 0.1 0.2 V GS = 0 V 0.6 1.0 1.4 1.8 VSD ,Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRL5NJ024 20 VDS VGS RD D.U.T. + I D , Drain Current (A) 15 RG -VDD VGS 10 Pulse Width 1 s Duty Factor 0.1 % Fig 10a. Switching Time Test Circuit 5 VDS 90% 0 25 50 75 100 125 150 TC , Case Temperature ( C) 10% VGS td(on) tr t d(off) tf Fig 9. Maximum Drain Current Vs. Case Temperature Fig 10b. Switching Time Waveforms 10 Thermal Response (Z thJC ) D = 0.50 0.20 1 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.00001 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJC + TC 0.1 0.001 0.01 P DM t1 t2 1 0.0001 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRL5NJ024 100 EAS , Single Pulse Avalanche Energy (mJ) 15V 80 TOP BOTTOM ID 5.0A 7.0A 11A VDS L D R IV E R 60 RG D .U .T. IA S + - VD D A 40 VGS 20V tp 0 .01 20 Fig 12a. Unclamped Inductive Test Circuit 0 25 50 75 100 125 150 V (B R )D S S tp Starting TJ , Junction Temperature ( C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current IAS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50K QG 12V .2F .3F 5.0V QGS VG QGD VGS 3mA D.U.T. + V - DS Charge IG ID Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit 6 www.irf.com IRL5NJ024 Footnotes: Repetitive Rating; Pulse width limited by maximum junction temperature. VDD = 25 V, Starting TJ = 25C, L=0.9mH Peak IAS =11A, VGS = 5.0 V, RG= 25 ISD 11A, di/dt 230 A/s, Pulse width 300 s; Duty Cycle 2% VDD 55V, TJ 150C Case Outline and Dimensions -- SMD-0.5 PAD ASSIGNMENTS IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 07/01 www.irf.com 7 |
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