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| SEMICONDUCTOR TECHNICAL DATA LOW FREQUENCY POWER AMP, CONVERTER ELECTRONIC GOVERNOR APPLICATIONS B KTB598 EPITAXIAL PLANAR PNP TRANSISTOR C FEATURES : VCE(sat)=-0.3V(Max.) at IC=-0.5A. Complementary to KTD545. K D E G N A Low Saturation Voltage MAXIMUM RATING (Ta=25 CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range ) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg RATING -30 -25 -5 -1 625 150 -55 150 UNIT F H F V L V V A mW 1 2 3 M C DIM A B C D E F G H J K L M N MILLIMETERS 4.70 MAX 4.80 MAX 3.70 MAX 0.45 1.00 1.27 0.85 0.45 _ 14.00 + 0.50 0.55 MAX 2.30 0.45 MAX 1.00 J 1. EMITTER 2. COLLECTOR 3. BASE TO-92 ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Transition Frequency Collector Output Capacitance Note : hFE Classification O:70 140, Y:120 ICBO IEBO ) TEST CONDITION VCB=-20V, IE=0 VEB=-5V, IC=0 VCE=-2V, IC=-50mA VCE=-2V, IC=-1A(Pulse) IC=-500mA, IB=-50mA IC=-500mA, IB=-50mA VCE=-10V, IC=-50mA VCB=-10V, IE=0, f=1MHz MIN. 70 30 TYP. -0.15 -0.85 180 25 MAX. -0.1 -0.1 400 -0.3 -1.2 V V MHz pF UNIT A A SYMBOL hFE(1) (Note) hFE(2) VCE(sat) VBE(sat) fT Cob 240, GR:200 400 1999. 8. 7 Revision No : 1 1/2 KTB598 I C - VCE -800 COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA) I B =-10mA IB =-8mA IB =-6mA I C - VCE -1000 -800 -600 -400 -200 I B =-1mA m A 0m -10 IB = IB =- 5 -600 IB 20 =- 0m A I B=-1 A 0mA I B =-30mA I B =-5mA I B =-3mA -400 IB =-4mA IB =-2mA I B =-1mA -200 0 0 -1 -2 -3 -4 IB =0mA 0 0 -0.2 -0.4 -0.6 -0.8 -1.0 COLLECTOR-EMITTER VOLTAGE V CE (V) -5 -6 -7 -8 COLLECTOR-EMITTER VOLTAGE V CE (V) I C - VBE COLLECTOR-EMITTER SATURATION VOLTAGE VCE (V) -1.4 COLLECTOR CURRENT IC (A) -1.2 -1.0 -0.8 -0.6 -0.4 -0.2 0 0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 BASE-EMITTER VOLTAGE V BE (V) VCE =-2V VCE(sat) - I C -2.0 -1.0 -0.5 -0.3 -0.1 0.05 -0.03 -0.01 -10 IC /I B =10 -30 -100 -300 -1K -3K -10K COLLECTOR CURRENT I C (mA) f T - IC TRANSITION FREQUENCY f T (MHz) 2K 1K 500 300 100 50 30 10 -1 -3 -10 -30 -100 -300 -1K COLLECTOR CURRENT I C (mA) VCE =-10V h FE - I C -500 -300 DC CURRENT GAIN h FE -100 -50 -30 -10 -5 -3 -1 -1 VCE =-2V -3 -10 -30 -100 -300 -1K -3K -10K COLLECTOR CURRENT I C (mA) 1999. 8. 7 Revision No : 1 2/2 |
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