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 NTE2635 Silicon NPN Transistor Horizontal Deflection w/Internal Damper Diode
Description: The NTE2635 is an enhanced performance, new generation, high-voltage, high-speed switching NPN transistor with an integrated damper diode in a full-pack envelope intended for use in horizontal deflection circuits in color TV receivers. This device features exceptional tolerance to base drive and collector current load variations resulting in a very low worst case dissipation. Absolute Maximum Ratings: Collector-Emitter Voltage (VBE = 0V), VCESM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1500V Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 700V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A Base Current, IB Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6A Reverse Base Current, -IB Continuous (Average over any 20ms period) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA Peak (Turn-Off Current) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A Total Power Dissipation (TC = +25C), Ptot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35W Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +150C Thermal Resistance, Junction-to-Case (With Heat Sink Compound), RthJC . . . . . . . . . . . . . 3.6K/W Typical Thermal Resistance, Junction-to-Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55K/W Electrical Characteristics: (TC = +25C unless otherwise specified)
Parameter Isolation Limiting Value RMS Isolation Voltage from all Three Terminals to Case Capacitance from T2 to External Heat Sink Static Characteristics Collector Cutoff Current ICES VCE = 1500V, VBE = 0, Note 1 VCE = 1500V, VBE = 0, TJ = +125C, Note 1 - - - - 1.0 2.0 mA mA VISOL CISOL f = 50-60hz, Sinusoidal Waveform, R.H. 65%, Clean and Dustfree f = 1MHz - - - 10 2500 - V pF Symbol Test Conditions Min Typ Max Unit
Note 1. Measured with half sine-wave voltage (curve tracer).
Electrical Characteristics: (TC = +25C unless otherwise specified)
Parameter Static Characteristics (Cont'd) Emitter Cutoff Current Emitter-Base Breakdown Voltage Base-Emitter Resistance Collector-Emitter Sustaining Voltage IEBO Rbe VEB = 7.5V, IC = 0 VEB = 7.5V 140 7.5 - 700 - 13.5 33 - 390 - - - mA V V Symbol Test Conditions Min Typ Max Unit
V(BR)EBO IB = 600mA VCEO(sus) IB = 0, IC = 100mA, L = 25mH
Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain Diode Forward Voltage
Dymanic Characteristics
VCE(sat) IC = 4.5A, IB = 1.1A IC = 4.5A, IB = 1.29A VBE(sat) hFE VF Cc ts tf IC = 4.5A, IB = 1.7A IC = 1A, VCE = 5V IC = 4.5A, VCE = 1V IF = 4.5A IE = 0, VCB = 10V, f = 1MHz IC = 4.5A Peak, IB(end) = 1.1A, LB = 6H, -VBB = 4V, (-dIB/dt = 0.6A/s)
- - - 7 4.0 - - - -
- - - 13 5.5 1.6 80 5.0 0.4
5.0 1.0 1.3 23 7.5 2.0 - 6.0 0.6
V V V
V pF s s
Collector Capacitance Turn-Off Storage Time Turn-Off Fall Time
.181 (4.6) Max .114 (2.9)
.126 (3.2) Dia Max .405 (10.3) Max Isol
.252 (6.4)
COLLECTOR
.622 (15.0) Max B C E
BASE
.118 (3.0) Max .531 (13.5) Min
EMITTER
.098 (2.5)
.100 (2.54)


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