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| BFR 180 NPN Silicon RF Transistor * For low-power amplifiers in mobile communication systems (pager) at collector currents from 0.2mA to 2.5mA * fT = 7GHz F = 2.1dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration BFR 180 RDs Q62702-F1296 1=B 2=E 3=C Package SOT-23 Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation Symbol Values 8 10 10 2 4 0.5 mW 30 150 - 65 ... + 150 - 65 ... + 150 780 C mA Unit V VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg 1) TS 127 C Junction temperature Ambient temperature Storage temperature Thermal Resistance Junction - soldering point RthJS K/W 1) TS is measured on the collector lead at the soldering point to the pcb. Semiconductor Group 1 Feb-04-1997 BFR 180 Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter Symbol min. DC Characteristics Collector-emitter breakdown voltage Values typ. max. Unit V(BR)CEO 8 100 - V A 100 nA 100 A 1 30 200 IC = 1 mA, IB = 0 Collector-emitter cutoff current ICES ICBO IEBO hFE VCE = 10 V, VBE = 0 Collector-base cutoff current VCB = 8 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain IC = 1 mA, VCE = 5 V Semiconductor Group 2 Feb-04-1997 BFR 180 Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter Symbol min. AC Characteristics Transition frequency Values typ. max. Unit fT 5 7 0.25 0.18 0.1 - GHz pF 0.4 dB 2.1 2.25 - IC = 3 mA, VCE = 5 V, f = 500 MHz Collector-base capacitance Ccb Cce - VCB = 5 V, f = 1 MHz Collector-emitter capacitance VCE = 5 V, f = 1 MHz Emitter-base capacitance Ceb - VEB = 0.5 V, f = 1 MHz Noise figure F IC = 1 mA, VCE = 5 V, ZS = ZSopt f = 900 MHz f = 1.8 GHz Power gain 1) Gms IC = 1 mA, VCE = 5 V, ZS = ZSopt ZL = ZLopt f = 900 MHz f = 1.8 GHz Transducer gain |S21e|2 8 5.5 13.5 10.5 - IC = 1 mA, VCE = 5 V, ZS =ZL= 50 f = 900 MHz f = 1.8 GHz 1) Gms = |S21/S12| Semiconductor Group 3 Feb-04-1997 BFR 180 SPICE Parameters (Gummel-Poon Model, Berkeley-SPICE 2G.6 Syntax) : Transistor Chip Data IS = 0.18519 fA VAF = NE = VAR = NC = RBM = CJE = TF = ITF = VJC = TR = MJS = XTI = 26.867 1.9818 3.2134 1.6195 60 3.2473 14.866 1.0202 1.1812 2.2648 0 3 V V fF ps mA V ns BF = IKF = BR = IKR = RB = RE = VJE = XTF = PTF = MJC = CJS = XTB = FC = 94.687 20.325 1.4255 3.7045 1.1812 0.3062 0 0.30423 0 0 0.87906 V deg fF NF = ISE = NR = ISC = IRB = RC = MJE = VTF = CJC = XCJC = VJS = EG = TNOM 1.0236 130.93 0.93013 6.1852 0.01 0.56 0.41827 0.22023 183.69 0.08334 0.75 1.11 300 fA fA mA V fF V eV K 0.025252 A 0.012138 A All parameters are ready to use, no scalling is necessary. Extracted on behalf of SIEMENS Small Signal Semiconductors by: Institut fur Mobil-und Satellitenfunktechnik (IMST) (c) 1996 SIEMENS AG Package Equivalent Circuit: LBI = LBO = LEI = LEO = LCI = LCO = CBE = CCB = CCE = 0.85 0.51 0.69 0.61 0 0.49 73 84 165 nH nH nH nH nH nH fF fF fF Valid up to 6 GHz For examples and ready to use parameters please contact your local Siemens distributor or sales office to obtain a Siemens CD-ROM or see Internet: http://www.siemens.de/Semiconductor/products/35/35.htm Semiconductor Group 4 Feb-04-1997 BFR 180 Total power dissipation Ptot = f (TA*, TS) * Package mounted on epoxy 40 mW Ptot 30 25 TS 20 TA 15 10 5 0 0 20 40 60 80 100 120 C 150 TA ,TS Permissible Pulse Load RthJS = f (tp) Permissible Pulse Load Ptotmax/PtotDC = f (tp) 10 3 10 1 RthJS Ptotmax/PtotDC D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 K/W 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 - 10 2 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 10 s 10 tp -1 0 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 10 s 10 tp -1 0 Semiconductor Group 5 Feb-04-1997 BFR 180 Collector-base capacitance Ccb = f (VCB) VBE = vbe = 0, f = 1MHz Transition frequency fT = f (IC) VCE = Parameter 0.45 pF 8 10V 8V GHz 5V Ccb 0.35 0.30 fT 6 3V 5 0.25 4 0.20 3 0.15 0.10 0.05 0.00 0 2 1V 0.7V 2V 1 0 0.0 2 4 6 8 V VR 11 1.0 2.0 3.0 4.0 mA IC 5.5 Power Gain Gma, Gms = f(IC) f = 0.9GHz VCE = Parameter 18 10V dB 3V Power Gain Gma, Gms = f(IC) f = 1.8GHz VCE = Parameter 14 dB G 14 2V G 10V 5V 10 3V 12 1V 10 0.7V 8 6 1V 4 8 2V 6 0.7V 4 0 1 2 3 4 mA IC 6 2 0 1 2 3 4 mA IC 6 Semiconductor Group 6 Feb-04-1997 BFR 180 Power Gain Gma, Gms = f(VCE):_____ |S21 |2 = f(VCE):--------- Intermodulation Intercept Point IP3=f(IC) (3rd order, Output, ZS=ZL=50) f = Parameter 16 VCE = Parameter, f = 900MHz 10 dBm 6 0.9GHz 3V 2V 2 8V 5V IC=1mA dB G IP3 4 12 0 1.8GHz -2 -4 -6 1V 10 8 0.9GHz -8 -10 -12 6 1.8GHz -14 -16 -18 0.0 4 0 2 4 6 8 V 12 1.0 2.0 3.0 4.0 V CE mA IC 6.0 Power Gain Gma, Gms = f(f) VCE = Parameter 24 Power Gain |S21|2= f(f) VCE = Parameter 10 IC=1mA dB dB IC=1mA G 20 18 16 14 12 10 8 6 4 0.0 10V 1V 0.7V 0.5 1.0 1.5 2.0 2.5 GHz f 3.5 S21 8 7 6 5 4 10V 3 2 1 0 0.0 1V 0.7V 0.5 1.0 1.5 2.0 2.5 GHz f 3.5 Semiconductor Group 7 Feb-04-1997 |
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