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| Si4376DY Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) Channel-1 Channel 1 30 Channel-2 Channel 2 rDS(on) (W) 0.020 @ VGS = 10 V 0.0275 @ VGS = 4.5 V 0.019 @ VGS = 10 V 0.023 @ VGS = 4.5 V ID (A) 7.5 6.5 7.5 6.5 FEATURES D D D D LITTLE FOOTr Plus Schottky Si4830DY Pin Compatible PWM Optimized 100% Rg Tested APPLICATIONS D Asymmetrical Buck-Boost DC/DC Converter SCHOTTKY PRODUCT SUMMARY VDS (V) 30 VSD (V) Diode Forward Voltage 0.50 V @ 1.0 A IF (A) 2.0 D1 D2 SO-8 S1 G1 S2 G2 1 2 3 4 Top View Ordering Information: Si4376DY SI4376DY-T1 (with Tape and Reel) S1 N-Channel MOSFET S2 N-Channel MOSFET 8 7 6 5 D1 D1 D2 D2 G1 G2 Schottky Diode ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) 10 secs Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa TA = 25_C TA = 70_C TA = 25_C TA = 70_C Steady State Channel-1 30 "20 5.7 4.6 30 0.9 1.1 0.7 - 55 to 150 W _C A Symbol VDS VGS ID IDM IS PD TJ, Tstg Channel-1 "20 7.5 6.0 1.7 2.0 1.3 Channel-2 "12 Channel-2 "12 Unit V Operating Junction and Storage Temperature Range THERMAL RESISTANCE RATINGS MOSFET Parameter Maximum J Mi Junction-to-Ambienta ti t A bi t Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1" x 1" FR4 Board. Document Number: 71934 S-31726--Rev. C, 18-Aug-03 www.vishay.com t v 10 sec Steady-State Steady-State Schottky Typ 53 93 35 Symbol RthJA RthJF Typ 52 93 35 Max 62.5 110 40 Max 62.5 110 40 Unit _C/W C/W 1 Si4376DY Vishay Siliconix MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED). Parameter Static Gate Threshold Voltage Gate-Body Gate Body Leakage VGS(th) IGSS VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 0 V, VGS = "12 V VDS = 24 V, VGS = 0 V V Zero Gate Voltage Drain Current IDSS VDS = 24 V, VGS = 0 V TJ = 85_C V V, On-State On State Drain Currentb ID( ) D(on) VDS = 5 V, VGS = 10 V V VGS = 10 V ID = 7 5 A V, 7.5 Drain-Source On-State Drain Source On State Resistanceb rDS( ) DS(on) VGS = 4 5 V ID = 6.5 A 4.5 V, 65 Forward Transconductanceb Diode Forward Voltageb gf fs VSD VDS = 15 V ID = 7 5 A V, 7.5 IS = 1 A VGS = 0 V A, Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 20 20 0.016 0.015 0.022 0.018 30 30 0.75 0.47 1.2 0.5 0.020 0.019 0.0275 0.023 S V W 1.0 0.8 3.0 2.0 "100 "100 1 100 15 2000 A mA V nA Symbol Test Condition Min Typa Max Unit Dynamica Total Gate Charge Gate-Source Gate Source Charge Gate-Drain Gate Drain Charge Gate Resistance Turn-On Turn On Delay Time Rise Time Turn-Off Turn Off Delay Time Fall Time Source-Drain Source Drain Reverse Recovery Time Qg Qgs Qgd d Rg td( ) d(on) tr td( ff) d(off) tf trr IF = 1 7 A di/dt = 100 A/ms 1.7 A, VDS = 15 V VGS = 4.5 V, ID = 7.5 A V, 45V 75 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 VDD = 15 V, RL = 15 W ID ^ 1 A, VGEN = 10 V, RG = 6 W Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 0.5 0.5 9 12.5 3.8 4.0 3.1 3.2 1.3 1.3 12 12 11 11 27 40 9 10 35 28 2.0 1.8 18 20 17 17 40 66 14 15 55 45 ns W 14 20 nC Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. SCHOTTKY SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Forward Voltage Drop Symbol VF Test Condition IF = 1.0 A IF = 1.0 A, TJ = 125_C Vr = 30 V Vr = 30 V, TJ = 100_C Vr = - 30 V, TJ = 125_C Vr = 10 V Min Typ 0.47 0.36 0.004 0.7 3.0 50 Max 0.50 0.42 0.100 10 20 Unit V Maximum Reverse Leakage Current Junction Capacitance www.vishay.com Irm CT mA pF 2 Document Number: 71934 S-31726--Rev. C, 18-Aug-03 Si4376DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 30 25 I D - Drain Current (A) 20 15 10 5 3V 0 0 2 4 6 8 10 VDS - Drain-to-Source Voltage (V) 0 0 1 2 3 4 5 VGS - Gate-to-Source Voltage (V) I D - Drain Current (A) VGS = 10 thru 5 V 30 4V 25 20 15 10 5 MOSFET CHANNEL-1 Transfer Characteristics TC = 125_C 25_C - 55_C On-Resistance vs. Drain Current 0.040 r DS(on) - On-Resistance ( W ) 1500 Capacitance 0.030 VGS = 4.5 V 0.020 VGS = 10 V C - Capacitance (pF) 1200 Ciss 900 600 0.010 300 Coss Crss 0.000 0 5 10 15 20 25 30 0 0 5 10 15 20 25 30 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Gate Charge 10 V GS - Gate-to-Source Voltage (V) VDS = 15 V ID = 7.5 A 8 1.6 On-Resistance vs. Junction Temperature VGS = 10 V ID = 7.5 A 1.4 6 r DS(on) - On-Resistance (W) (Normalized) 8 12 16 20 1.2 4 1.0 2 0.8 0 0 4 Qg - Total Gate Charge (nC) Document Number: 71934 S-31726--Rev. C, 18-Aug-03 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) www.vishay.com 3 Si4376DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 40 0.06 0.05 0.04 ID = 7.5 A 0.03 0.02 0.01 0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) MOSFET CHANNEL-1 On-Resistance vs. Gate-to-Source Voltage TJ = 150_C 10 TJ = 25_C 1 0.0 Threshold Voltage 0.4 0.2 V GS(th) Variance (V) ID = 250 mA - 0.0 - 0.2 - 0.4 - 0.6 - 0.8 - 50 10 Power (W) 30 50 r DS(on) - On-Resistance ( W ) I S - Source Current (A) Single Pulse Power 40 20 - 25 0 25 50 75 100 125 150 0 10 -3 10 -2 10 -1 1 10 100 600 TJ - Temperature (_C) Time (sec) 100 Limited by rDS(on) 10 I D - Drain Current (A) Safe Operating Area, Junction-to-Foot 1 10 ms 100 ms 0.1 TC = 25_C Single Pulse 1s 10 s dc 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) www.vishay.com Document Number: 71934 S-31726--Rev. C, 18-Aug-03 4 Si4376DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 MOSFET CHANNEL 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (sec) Notes: PDM t1 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 93_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted t1 t2 10 100 600 2 1 Normalized Thermal Transient Impedance, Junction-to-Foot Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (sec) 1 10 Document Number: 71934 S-31726--Rev. C, 18-Aug-03 www.vishay.com 5 Si4376DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 30 25 I D - Drain Current (A) 20 15 10 5 0 0 2 4 6 8 10 VDS - Drain-to-Source Voltage (V) VGS = 10 thru 4 V 30 25 I D - Drain Current (A) 3V 20 15 10 5 0 0.0 MOSFET CHANNEL-2 Transfer Characteristics TC = 125_C 25_C - 55_C 0.5 1.0 1.5 2.0 2.5 3.0 3.5 VGS - Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 0.030 r DS(on) - On-Resistance ( W ) 2000 Capacitance VGS = 4.5 V 0.018 VGS = 10 V C - Capacitance (pF) 0.024 1600 Ciss 1200 0.012 800 0.006 400 Crss Coss 0.000 0 5 10 15 20 25 30 0 0 5 10 15 20 25 30 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Gate Charge 10 V GS - Gate-to-Source Voltage (V) VDS = 15 V ID = 7.5 A 8 1.8 1.6 1.4 1.2 1.0 0.8 0.6 - 50 On-Resistance vs. Junction Temperature VGS = 10 V ID = 7.5 A 6 4 2 0 0 6 12 18 24 30 Qg - Total Gate Charge (nC) www.vishay.com r DS(on) - On-Resistance (W) (Normalized) - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) Document Number: 71934 S-31726--Rev. C, 18-Aug-03 6 Si4376DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 30 0.06 0.05 0.04 0.03 0.02 0.01 0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) MOSFET CHANNEL-2 On-Resistance vs. Gate-to-Source Voltage I S - Source Current (A) TJ = 150_C 10 TJ = 25_C 1 0.0 Threshold Voltage 0.4 0.2 V GS(th) Variance (V) ID = 250 mA - 0.0 - 0.2 - 0.4 - 0.6 - 0.8 - 50 10 Power (W) 30 50 r DS(on) - On-Resistance ( W ) ID = 7.5 A Single Pulse Power 40 20 - 25 0 25 50 75 100 125 150 0 10 -3 10 -2 10 -1 1 10 100 600 TJ - Temperature (_C) Time (sec) Safe Operating Area, Junction-to-Foot 100 Limited by rDS(on) 10 I D - Drain Current (A) 1 10 ms 100 ms 0.1 TC = 25_C Single Pulse 1s 10 s dc 0.01 0.1 1 10 VDS - Drain-to-Source Voltage (V) 100 Document Number: 71934 S-31726--Rev. C, 18-Aug-03 www.vishay.com 7 Si4376DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 MOSFET CHANNEL-2 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (sec) Notes: PDM t1 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 93_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted t1 t2 10 100 600 2 1 Normalized Thermal Transient Impedance, Junction-to-Foot Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (sec) 1 10 www.vishay.com 8 Document Number: 71934 S-31726--Rev. C, 18-Aug-03 Si4376DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Reverse Current vs. Junction Temperature 10 TJ = 150_C I F - Forward Current (A) 1 SCHOTTKY Forward Voltage Drop 20 10 I R - Reverse Current (mA) 0.1 30 V 24 V TJ = 25_C 0.01 0.001 0.0001 0 25 50 75 100 125 150 TJ - Temperature (_C) 1 0.0 0.3 0.6 0.9 1.2 1.5 VF - Forward Voltage Drop (V) 200 Capacitance 160 C - Capacitance (pF) 120 80 Coss 40 0 0 6 12 18 24 30 VDS - Drain-to-Source Voltage (V) Document Number: 71934 S-31726--Rev. C, 18-Aug-03 www.vishay.com 9 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1 |
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