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| SI6459DQ Vishay Siliconix P-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) -60 rDS(on) (W) 0.120 @ VGS = -10 V 0.150 @ VGS = -4.5 V ID (A) "2.6 "2.4 S* TSSOP-8 D S S G 1 2 3 4 Top View D P-Channel MOSFET D 8 D S S D G * Source Pins 2, 3, 6 and 7 must be tied common. SI6459DQ 7 6 5 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a 150 C) Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C ID TA = 70_C IDM IS PD TJ, Tstg Symbol VDS VGS Limit -60 "20 "2.6 "2.1 "30 -1.25 1.5 Unit V A W 1.0 -55 to 150 _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Notes a. Surface Mounted on FR4 Board, t v 10 sec. For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm Document Number: 70186 S-99446--Rev. D, 29-Nov-99 www.vishay.com S FaxBack 408-970-5600 Symbol RthJA Limit 83 Unit _C/W 2-1 SI6459DQ Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain Source On State Resistancea Drain-Source On-State Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS( ) DS(on) gfs VSD VDS = VGS, ID = -250 mA VDS = 0 V, VGS = "20 V VDS = -60 V, VGS = 0 V VDS = -60 V, VGS = 0 V, TJ = 70_C VDS = -5 V, VGS = -10 V VGS = -10 V, ID = -2.6 A VGS = -4.5 V, ID = -2.4 A VDS = -15 V, ID = -2.6 A IS = -1.25 A, VGS = 0 V -20 0.100 0.125 7.5 -0.8 -1.2 0.120 0.150 W S V -1.0 "100 -1 -25 V nA mA A Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd td(on) tr td(off) tf trr IF = -1.25 A, di/dt = 100 A/ms VDD = -30 V, RL = 30 W 30 V, ID ^ -1 A, VGEN = -10 V RG = 6 W 1A 10 V, VDS = -30 V VGS = -10 V ID = -2.6 A 30 V, 10 V, 26 16 3.7 2.0 8 10 35 12 60 15 20 50 25 90 ns 25 nC C Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. www.vishay.com S FaxBack 408-970-5600 2-2 Document Number: 70186 S-99446--Rev. D, 29-Nov-99 SI6459DQ Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 30 VGS = 10 thru 6 V 24 I D - Drain Current (A) I D - Drain Current (A) 5V 18 16 20 TC = -55_C 25_C 125_C 12 Transfer Characteristics 12 4V 8 6 3V 0 0 1 2 3 4 5 6 4 0 0 2 4 6 8 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 1.0 1400 1200 r DS(on)- On-Resistance ( W ) 0.8 C - Capacitance (pF) 1000 800 600 400 200 0 0 4 8 12 16 20 0 10 Capacitance Ciss 0.6 0.4 VGS = 4.5 V 0.2 Coss Crss VGS = 10 V 0 20 30 40 50 60 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) 10 VDS = 30 V ID = 2.6 A V GS - Gate-to-Source Voltage (V) Gate Charge 1.85 On-Resistance vs. Junction Temperature VGS = 10 V ID = 2.6 A 6 r DS(on)- On-Resistance ( W ) (Normalized) 0 4 8 12 16 20 8 1.60 1.35 4 1.10 2 0.85 0 0.60 -50 -25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (_C) Document Number: 70186 S-99446--Rev. D, 29-Nov-99 www.vishay.com S FaxBack 408-970-5600 2-3 SI6459DQ Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 20 0.5 On-Resistance vs. Gate-to-Source Voltage 10 I S - Source Current (A) TJ = 150_C r DS(on)- On-Resistance ( W ) 0.4 0.3 ID = 2.6 A 0.2 TJ = 25_C 0.1 1 0.00 0.25 0.50 0.75 1.00 1.25 1.50 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Threshold Voltage 0.75 Single Pulse Power 50 TC = 25_C Single Pulse 40 0.50 V GS(th) Variance (V) 30 0.25 ID = 250 mA Power (W) 20 0.00 10 -0.25 -50 0 -25 0 25 50 75 100 125 150 175 0.01 0.1 1 Time (sec) 10 30 TJ - Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 Notes: PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 83_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 30 Square Wave Pulse Duration (sec) www.vishay.com S FaxBack 408-970-5600 2-4 Document Number: 70186 S-99446--Rev. D, 29-Nov-99 |
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