![]() |
|
If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
Datasheet File OCR Text: |
Si7886ADP Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) 0.0040 @ VGS = 10 V 0.0048 @ VGS = 4.5 V ID (A) 25 23 Qg (Typ) 47 D TrenchFETr Power MOSFET D Optimized for "Low Side" Synchronous Rectifier Operation D New Low Thermal Resistance PowerPAKr Package with Low 1.07-mm Profile D 100% Rg Tested RoHS COMPLIANT Available APPLICATIONS PowerPAK SO-8 D DC/DC Converters D Synchronous Rectifiers 5.15 mm 3 S 4 G 6.15 mm S 1 2 S D D 8 7 D 6 D 5 D G Bottom View Ordering Information: Si7886ADP-T1 Si7886ADP-T1--E3 (Lead (Pb)-Free) S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current (10 ms Pulse Width) Continuous Source Current (Diode Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipationa Operating Junction and Storage Temperature Range Conduction)a L= 0 1 mH 0.1 TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS IAS EAS PD TJ, Tstg 10 secs 30 "12 25 20 60 4.5 50 125 5.4 3.4 Steady State Unit V 15 12 A 1.6 mJ 1.9 1.2 W _C -55 to 150 THERMAL RESISTANCE RATINGS Parameter Maximum J Mi Junction-to-Ambienta ti t A bi t Maximum Junction-to-Case (Drain) Notes a. Surface Mounted on 1" x 1" FR4 Board. Document Number: 73156 S-51016--Rev. B, 23-May-05 www.vishay.com t v 10 sec Steady State Steady State Symbol RthJA RthJC Typical 18 50 1.0 Maximum 23 65 1.5 Unit _C/W C/W 1 Si7886ADP Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "12 V VDS = 30 V, VGS = 0 V VDS = 30 V, VGS = 0 V, TJ = 55_C VDS w 5 V, VGS = 10 V VGS = 10 V, ID = 25 A VGS = 4.5 V, ID = 23 A VDS = 15 V, ID = 25 A IS = 2.9 A, VGS = 0 V 30 0.0032 0.0037 90 0.7 1.1 0.0040 0.0048 0.6 1 1.5 "100 1 5 V nA mA A W S V Symbol Test Condition Min Typ Max Unit Dynamicb Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Ciss Coss Crss Qg Qgs Qgd Rg td(on) tr td(off) tf trr IF = 2.9 A, di/dt = 100 A/ms VDD = 15 V, RL = 15 W ID ^ 1 A, VGEN = 10 V, Rg = 6 W 0.5 VDS = 15 V, VGS = 4.5 V, ID = 25 A 5, 5, 5 VDS = 15 V, Vss = 0 V, f = 1 kHz 6450 873 402 47 12.5 9.0 1.0 17 14 158 43 50 1.5 30 25 230 65 80 ns W 60 nC C p pF Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 60 50 40 30 20 10 0 0 2 4 6 8 10 2V Output Characteristics VGS = 10 thru 3 V 60 50 40 30 20 Transfer Characteristics I D - Drain Current (A) I D - Drain Current (A) TC = 125_C 10 0 0.0 25_C -55_C 1.5 2.0 2.5 3.0 0.5 1.0 VDS - Drain-to-Source Voltage (V) www.vishay.com VGS - Gate-to-Source Voltage (V) Document Number: 73156 S-51016--Rev. B, 23-May-05 2 Si7886ADP Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 0.0075 On-Resistance vs. Drain Current 8000 7000 Capacitance Ciss r DS(on) - On-Resistance ( W ) 0.0060 C - Capacitance (pF) 6000 5000 4000 3000 2000 Coss 1000 Crss 0.0045 VGS = 4.5 V 0.0030 VGS = 10 V 0.0015 0.0000 0 10 20 30 40 50 0 0 5 10 15 20 25 30 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) 6 V GS - Gate-to-Source Voltage (V) 5 4 3 2 1 0 0 10 20 VDS = 15 V ID = 25 A Gate Charge 1.6 On-Resistance vs. Junction Temperature VGS = 10 V ID = 25 A 1.4 rDS(on) - On-Resiistance (Normalized) 1.2 1.0 0.8 30 40 50 60 0.6 -50 -25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (_C) Source-Drain Diode Forward Voltage 50 0.025 On-Resistance vs. Gate-to-Source Voltage TJ = 150_C 10 r DS(on) - On-Resistance ( W ) 0.020 I S - Source Current (A) 0.015 TJ = 25_C 0.010 ID = 25 A 0.005 1 0.00 0.2 0.4 0.6 0.8 1.0 1.2 VSD - Source-to-Drain Voltage (V) Document Number: 73156 S-51016--Rev. B, 23-May-05 0.000 0 2 4 6 8 10 VGS - Gate-to-Source Voltage (V) www.vishay.com 3 Si7886ADP Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.4 0.2 V GS(th) Variance (V) -0.0 -0.2 -0.4 -0.6 -0.8 -50 40 Power (W) ID = 250 mA 200 Single Pulse Power, Junction-to-Ambient 160 120 80 -25 0 25 50 75 100 125 150 0 0.001 0.01 0.1 Time (sec) 1 10 TJ - Temperature (_C) 100 *Limited by rDS(on) 10 I D - Drain Current (A) Safe Operating Area, Junction-to-Case 1 ms 10 ms 1 100 ms 100 s 0.1 10 s TC = 25_C Single Pulse dc 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) *VGS u minimum VGS at which rDS(on) is specified 2 1 Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Notes: PDM t1 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 65_C/W t1 t2 0.01 10-4 Single Pulse 10-3 10-2 10-1 1 Square Wave Pulse Duration (sec) 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 www.vishay.com 4 Document Number: 73156 S-51016--Rev. B, 23-May-05 Si7886ADP Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 2 1 Normalized Thermal Transient Impedance, Junction-to-Case Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 Square Wave Pulse Duration (sec) 10-1 1 Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?73156. Document Number: 73156 S-51016--Rev. B, 23-May-05 www.vishay.com 5 |
Price & Availability of SI7886ADP-T1-E3
![]() |
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |