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 Semiconductor
STJ828UF
P-Channel Enhancement-Mode MOSFET
Description
* High speed switching application. * Analog switch application.
Features
* -2.5V Gate drive. * Low threshold voltage : Vth = -0.5~ -1.5V. * High speed.
Ordering Information
Type NO. STJ828UF Marking J28 Package Code SOT-323F
Outline Dimensions
unit : mm
2.10.1 0.30~0.40 0.70-0.15 0~0.1
+0.1
1.300.1
1.30 BSC
2.00.1
1 3 2
0.110.05
PIN Connections 1. Gate 2. Source 3. Drain
KST-3059-000
1
STJ828UF
Absolute maximum ratings
Characteristic
Drain-Source voltage Gate-Source voltage DC Drain current Drain Power dissipation Channel temperature Storage temperature range
(Ta=25C)
Symbol
VDS VGSS ID PD Tch Tstg
Ratings
-20 7 -50 150 150 -55~150
Unit
V V mA mW C C
Electrical Characteristics
Characteristic
Drian-Source breakdown voltage Gate-Threshold voltage Drain cut-off current Gate leakage current Drain-Source on-resistance Forward transfer admittance Input capacitance Output capacitance Reverse Transfer capacitance Turn-on time Turn-off time
(Ta=25C)
Symbol
BVDSS Vth IDSS IGSS RDS(ON) Yfs Ciss Coss Crss tON tOFF
Test Condition
ID=-100A, VGS=0 ID=-0.1mA, VDS=-3V VDS=-20V, VGS=0 VGS=7V, VDS=0 VGS=-2.5V, ID=-10mA VDS=-3V, ID=-10mA VDS=-3V, VGS=0, f=1MHz VDS=-3V, VGS=0, f=1MHz VDS=-3V, VGS=0, f=1MHz VDD=-3V, ID=-10mA VGEN=0~-2.5V VDD=-3V, ID=-10mA VGEN=0~-2.5V
Min. Typ. Max.
-20 -0.5 -1.5 -1 1 40 15 10.4 8.4 2.8 0.15 0.13
Unit
V V A A mS pF pF pF
*. Switching Time Test Circuit
=
KST-3059-000
2
STJ828UF
Electrical Characteristic Curves
Fig1 ID - VDS
Fig2 ID - VDS
Fig3 IDR - VDS
Fig4 ID - VGS
100
-

Fig5 Yfs- ID
Fig6 C - VDS
KST-3059-000
3
STJ828UF
Fig7 VDS(on) - ID Fig8 t - ID
-

Fig9 PD - Ta
KST-3059-000
4


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