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| VTB Process Photodiodes VTB6061B PACKAGE DIMENSIONS inch (mm) PRODUCT DESCRIPTION Large area planar silicon photodiode in a "flat" window, dual lead TO-8 package. The package incorporates an infrared rejection filter. Cathode is common to the case. These diodes have very high shunt resistance and have good blue response. CASE 15 TO-8 HERMETIC CHIP ACTIVE AREA: .058 in2 (37.7 mm2) ABSOLUTE MAXIMUM RATINGS Storage Temperature: Operating Temperature: -40C to 110C -40C to 110C ELECTRO-OPTICAL CHARACTERISTICS @ 25C (See also VTB curves, pages 21-22) VTB6061B SYMBOL ISC TC ISC VOC TC VOC ID RSH TC RSH CJ range p VBR 1/2 NEP D* CHARACTERISTIC Short Circuit Current ISC Temperature Coefficient Open Circuit Voltage VOC Temperature Coefficient Dark Current Shunt Resistance RSH Temperature Coefficient Junction Capacitance Spectral Application Range Spectral Response - Peak Breakdown Voltage Angular Resp. - 50% Resp. Pt. Noise Equivalent Power Specific Detectivity 2 TEST CONDITIONS Min. H = 100 fc, 2850 K 2850 K H = 100 fc, 2850 K 2850 K H = 0, VR = 2.0 V H = 0, V = 10 mV H = 0, V = 10 mV H = 0, V = 0 330 580 40 55 1.0 x 10-13 (Typ.) 6.1 x 10 12 (Typ.) .10 -8.0 8.0 720 26 Typ. 35 .02 420 -2.0 2.0 .08 Max. A %/C mV mV/C nA G %/C nF nm nm V Degrees W Hz cm Hz / W UNITS PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto 35 |
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