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RUF025N02
Transistors
1.5V Drive Nch MOSFET
RUF025N02
Structure Silicon N-channel MOSFET Dimensions (Unit : mm)
TUMT3
Features 1) Low On-resistance. 2) Space saving, small surface mount package (TUMT3). 3) Low voltage drive (1.5V drive).
(1) Gate
Applications Switching
(2) Source (3) Drain
Abbreviated symbol : XE
Packaging specifications
Package Type RUF025N02 Code Basic ordering unit (pieces) Taping TL 3000
Inner circuit
(3)
(1) 1
2
(2) 1 ESD PROTECTION DIODE 2 BODY DIODE
(1) Gate (2) Source (3) Drain
Absolute maximum ratings (Ta=25C)
Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Total power dissipation Channel temperature Range of storage temperature
1 Pw10s, Duty cycle1% 2 Mounted on a ceramic board
Continuous Pulsed Continuous Pulsed
Symbol VDSS VGSS ID IDP 1 IS ISP 1 PD 2 Tch Tstg
Limits 20 10 2.5 5 0.6 5 0.8 150 -55 to +150
Unit V V A A A A W C C
Thermal resistance
Parameter Channel to ambient
Mounted on a ceramic board
Symbol Rth(ch-a)
Limits 156
Unit C/W
0.2Max.
1/4
RUF025N02
Transistors
Electrical characteristics (Ta=25C)
Parameter Symbol IGSS Gate-source leakage Drain-source breakdown voltage V(BR) DSS Zero gate voltage drain current IDSS Gate threshold voltage VGS (th) Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge
Pulsed
RDS (on)
Yfs Ciss Coss Crss td (on) tr td (off) tf Qg Qgs Qgd

Min. - 20 - 0.3 - - - - 3.6 - - - - - - - - - -
Typ. - - - - 39 49 65 80 - 370 90 50 7 15 35 15 5 0.9 0.8
Max. 10 - 1 1.3 54 68 91 160 - - - - - - - - - - -
Unit A V A V m m m m S pF pF pF ns ns ns ns nC nC nC
Conditions VGS=10V, VDS=0V ID= 1mA, VGS=0V VDS= 20V, VGS=0V VDS= 10V, ID= 1mA ID= 2.5A, VGS= 4.5V ID= 2.5A, VGS= 2.5V ID= 1.3A, VGS= 1.8V ID= 0.5A, VGS= 1.5V VDS= 10V, ID= 2.5A VDS= 10V VGS=0V f=1MHz ID= 1.3A VDD 10V VGS= 4.5V RL 7.7 RG=10 ID= 2.5A, VDD 10V VGS= 4.5V RL 4, RG=10
Body diode characteristics (Source-drain) (Ta=25C)
Parameter Forward voltage
Pulsed
Symbol VSD
Min. -
Typ. -
Max. 1.2
Unit V
Conditions IS= 0.6A, VGS=0V
2/4
RUF025N02
Transistors
Electrical characteristics curves
1000
Ta=25C f=1MHz VGS=0V
1000
GATE-SOURCE VOLTAGE : VGS (V)
CAPACITANCE : C (pF)
Ciss
SWITCHING TIME : t (ns)
Ta=25C VDD=10V VGS=4.5V RG=10 Pulsed
6 5 4 3
Ta=25C VDD=10V ID=2.5A RG=10 Pulsed
100
td(off)
tf
100
Coss Crss
10
td(on)
tr
2
1 0
10 0.01
0.1
1
10
100
1 0.01
0.1
1
10
0
1
2
3
4
5
6
7
DRAIN-SOURCE VOLTAGE : VDS (V)
DRAIN CURRENT : ID (A)
TOTAL GATE CHARGE : Qg (nC)
Fig.1 Typical Capacitance vs. Drain-Source Voltage
Fig.2 Switching Characteristics
Fig.3 Dynamic Input Characteristics
10
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (m)
VDS=10V Pulsed
100
10
Ta=25C Pulsed
VGS=0V Pulsed
Ta=125C 75C
DRAIN CURRENT : ID (A)
1
Ta=125C 75C 25C -25C
80
ID=2.5A
SOURCE CURRENT : IS (A)
1
60
25C -25C
0.1
40
ID=1.3A
0.1
0.01
20
0.001 0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0 0
1
2
3
4
5
6
7
8
9
10
0.01 0.0
0.5
1.0
1.5
GATE-SOURCE VOLTAGE : VGS (V)
GATE-SOURCE VOLTAGE : VGS (V)
SOURCE-DRAIN VOLTAGE : VSD (V)
Fig.4 Typical Transfer Characteristics
Fig.5 Static Drain-Source On-State Resistance vs. Gate-Source Voltage
Fig.6 Source Current vs. Source-Drain Voltage
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (m)
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (m)
Ta=125C 75C 25C -25C
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (m)
1000
VGS=4.5V Pulsed
1000
VGS=2.5V Pulsed
1000
VGS=1.8V Pulsed
Ta=125C 75C 25C -25C
Ta=125C 75C
100
25C -25C
100
100
10 0.01
0.1
1
10
10 0.01
0.1
1
10
10 0.01
0.1
1
10
DRAIN CURRENT : ID (A)
DRAIN CURRENT : ID (A)
DRAIN CURRENT : ID (A)
Fig.7 Static Drain-Source On-State Resistance vs. Drain Current ()
Fig.8 Static Drain-Source On-State Resistance vs. Drain Current ()
Fig.9 Static Drain-Source On-State Resistance vs. Drain Current()
3/4
RUF025N02
Transistors
1000 1000
10
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (m)
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (m)
Pulsed VGS=1.5V VGS=1.8V VGS=2.5V VGS=4.5V
Ta=125C 75C 25C -25C
FORWARD TRANSFER ADMITTANCE : Yfs (S)
VGS=1.5V Pulsed
Ta=25C
VDS=10V Pulsed
Ta=-25C 25C 75C 125C
100
100
10
10 0.01
0.1
1
10
10 0.01
0.1
1
10
0.1 0.01
0.1
1
10
DRAIN CURRENT : ID (A)
DRAIN CURRENT : ID (A)
DRAIN CURRENT : ID (A)
Fig.10 Static Drain-Source On-State Resistance vs. Drain Current ( )
Fig.11 Static Drain-Source On-State Resistance vs. Drain Current ( )
Fig.12 Forward Transfer Admittance vs. Drain Current
Measurement circuit
Pulse Width
VGS ID RL D.U.T. RG VDD VDS
VGS VDS
50% 10% 10% 90% td(on) ton tr
90%
50% 10% 90%
td(off) toff
tf
Fig.13 Switching Time Measurement Circuit
Fig.14 Switching Waveforms
VG
VGS
ID RL
VDS
VGS Qgs
Qg
IG(Const.) D.U.T. RG VDD
Qgd
Charge
Fig.15 Gate Charge Measurement Circuit
Fig.16 Gate Charge Waveform
4/4
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of which would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. It is our top priority to supply products with the utmost quality and reliability. However, there is always a chance of failure due to unexpected factors. Therefore, please take into account the derating characteristics and allow for sufficient safety features, such as extra margin, anti-flammability, and fail-safe measures when designing in order to prevent possible accidents that may result in bodily harm or fire caused by component failure. ROHM cannot be held responsible for any damages arising from the use of the products under conditions out of the range of the specifications or due to non-compliance with the NOTES specified in this catalog.
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Appendix1-Rev2.0

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