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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD841 DESCRIPTION With TO-220 package Low collector saturation voltage High speed switching High voltage:VCBO=800V(Min) APPLICATIONS High voltage switching applications PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO VCEO VEBO IC IB PARAMETER TOR NDU ICO E SEM ANG INCH CONDITIONS VALUE 800 Collector-base voltage Open emitter Collector-emitter voltage Open base 400 5 Emitter-base voltage Collector current Base current TC=25ae Open collector 3 1.5 40 Collector power dissipation Ta=25ae 2 150 -55~150 UNIT V V V A A PC W Tj Tstg Junction temperature Storage temperature ae ae Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=10mA , IB=0 IC=0.5A; IB=50mA IC=0.5A; IB=50mA VCB=800V; IE=0 VEB=5V; IC=0 IC=10mA ; VCE=5V IC=0.5A ; VCE=5V IE=-0.1A ; VCE=10V 8 10 MIN 400 TYP. 2SD841 SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 fT COB tf MAX UNIT V 1.0 1.5 1 1 V V mA mA NDU ICO E SEM ANG INCH Output capacitance Fall time IE=0 ; VCB=10V;f=1MHz IC=0.5A; IB1=-IB2=50mA VCC=200V; RL=400| TOR 4 75 1.0 MHz pF |I s 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD841 TOR NDU ICO E SEM ANG INCH Fig.2 Outline dimensions (unindicated tolerance:A 0.10 mm) 3 |
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