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Ordering number : ENN8166 CPH3145 / CPH3245 CPH3145 / CPH3245 Applications * PNP / NPN Epitaxial Planar Silicon Transistors DC / DC Converter Applications Relay drivers, lamp drivers, motor drivers, flash. Features * * * * * * Adoption of MBIT process. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Ultrasmall package facilitates miniaturization in end products (mounting height : 0.9mm). High allowable power dissipation. Specifications ( ) : CPH3145 Absolute Maximum Ratings at Ta=25C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCES VCEO VEBO IC ICP IB PC Tj Tstg Mounted on a ceramic board (600mm2!0.8mm) Conditions Ratings (--50)80 (--50)80 (--)50 (--)6 (--)2 (--)4 (--)400 0.9 150 --55 to +150 Unit V V V V A A mA W C C Electrical Characteristics at Ta=25C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Symbol ICBO IEBO hFE fT Cob Conditions VCB=(--)40V, IE=0 VEB=(--)4V, IC=0 VCE=(--)2V, IC=(-)100mA VCE=(--)10V, IC=(--)300mA VCB=(--)10V, f=1MHz 200 420 (16)8 Ratings min typ max (--)1 (--)1 560 MHz pF Unit A A Marking : CPH3145 : BE, CPH3245 : DQ Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN D2004EA TS IM TB-00000981 No.8166-1/5 CPH3145 / CPH3245 Continued from preceding page. Parameter Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-ON Time Storage Time Fall Time Symbol VCE(sat) VBE(sat) V(BR)CBO V(BR)CES V(BR)CEO V(BR)EBO ton tstg tf Conditions IC=(--)1A, IB=(--)50mA IC=(--)1A, IB=(--)50mA IC=(--)10A, IE=0 IC=(--)100A, RBE=0 IC=(--)1mA, RBE= IE=(-)10A, IC=0 See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. (-50)80 (-50)80 (-)50 (--)6 (35)35 (200)330 (24)40 Ratings min typ (--)0.9 max (--)1.2 (-165)130 (--330)260 Unit mV V V V V V ns ns ns Package Dimensions unit : mm 2150A 2.9 0.4 3 0.6 Switching Time Test Circuit PW=20s D.C.1% IB1 OUTPUT IB2 VR 50 + 100F VBE= --5V + 470F VCC=25V RB 0.2 0.15 INPUT RL 0.05 1.6 2.8 1 1.9 2 0.6 0.7 0.9 1 : Base 2 : Emitter 3 : Collector SANYO : CPH3 0.2 IC=10IB1= --10IB2=0.7A For PNP, the polarity is reversed. --2.0 --1.8 IC -- VCE CPH3145 0 --1 0 mA 2.0 IC -- VCE A 50m 0 --8 mA --60 mA --40 mA --20m A Collector Current, IC -- A 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 40 m A 30mA CPH3245 20mA 15mA Collector Current, IC -- A --1.6 --1.4 --1.2 --1.0 --0.8 --0.6 --10mA --8mA --6mA --4mA --2mA 10mA 8mA 6mA 4mA 2mA --0.4 --0.2 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 IB=0 --1.8 --2.0 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 IB=0 1.8 2.0 Collector-to-Emitter Voltage, VCE -- V --2.00 --1.75 IT08923 2.00 1.75 1.50 1.25 1.00 0.75 0.50 0.25 0 Collector-to-Emitter Voltage, VCE -- V IT08924 IC -- VBE CPH3145 VCE= --2V Collector Current, IC -- A IC -- VBE CPH3245 VCE=2V Collector Current, IC -- A --1.50 --1.25 25C --25C C Ta=7 5 --0.75 --0.50 --0.25 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 IT08925 0 0.2 0.4 0.6 Ta= 75 --1.00 0.8 --25C 1.0 IT08926 Base-to-Emitter Voltage, VBE -- V Base-to-Emitter Voltage, VBE -- V C 25C No.8166-2/5 CPH3145 / CPH3245 7 5 hFE -- IC Ta=75C 7 hFE -- IC CPH3245 VCE=2V Ta=75C CPH3145 VCE= --2V DC Current Gain, hFE 5 3 25C --25C 3 DC Current Gain, hFE 25C 2 --25C 2 100 7 5 100 7 5 0.01 3 2 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Collector Current, IC -- A 7 IT08927 7 f T -- IC Gain-Bandwidth Product, f T -- MHz CPH3145 VCE= --10V Collector Current, IC -- A IT08928 f T -- IC 5 3 2 Gain-Bandwidth Product, f T -- MHz 5 CPH3245 VCE=10V 3 100 7 5 3 2 2 100 7 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 10 0.01 2 3 5 7 0.1 2 3 5 7 0.1 2 3 Collector Current, IC -- A 7 5 IT08929 5 Collector Current, IC -- A IT08930 Cob -- VCB CPH3145 f=1MHz Output Capacitance, Cob -- pF Cob -- VCB CPH3245 f=1MHz Output Capacitance, Cob -- pF 3 3 2 2 10 7 5 10 7 5 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 3 57 IT08931 3 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 57 IT08932 Collector-to-Base Voltage, VCB -- V 5 3 2 Collector-to-Base Voltage, VCB -- V 5 3 VCE(sat) -- IC Collector-to-Emitter Saturation Voltage, VCE(sat) -- V CPH3145 IC / IB=10 VCE(sat) -- IC CPH3245 IC / IB=10 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 2 0.1 7 5 3 2 --0.1 7 5 3 2 =7 Ta C 5 5 --2 C = Ta C 25 0.01 7 5 C 75 5C --2 C 25 --0.01 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 3 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Collector Current, IC -- A IT08933 Collector Current, IC -- A IT008934 No.8166-3/5 CPH3145 / CPH3245 --1.0 7 VCE(sat) -- IC CPH3145 IC / IB=20 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 5 3 2 VCE(sat) -- IC CPH3245 IC / IB=20 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 5 3 2 0.1 7 5 3 2 --0.1 7 5 3 2 C 75 Ta= 5C --2 C 25 = Ta 75 C 2 0.01 5 --2 5C C --0.01 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 7 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Collector Current, IC -- A 3 IT08935 3 VBE(sat) -- IC Collector Current, IC -- A IT08936 VBE(sat) -- IC Base-to-Emitter Saturation Voltage, VBE(sat) -- V 2 Base-to-Emitter Saturation Voltage, VBE(sat) -- V CPH3145 IC / IB=20 CPH3245 IC / IB=20 2 --1.0 Ta= --25C 75C 25C 1.0 Ta= --25C 75C 25C 7 7 5 5 3 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 3 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Collector Current, IC -- A 7 5 3 2 IT08937 ASO Collector Current, IC -- A 1.0 0.9 IT08938 PC -- Ta ICP=4A 1m <10s Collector Dissipation, PC -- W 50 0 CPH3145 / CPH3245 IC=2A DC M Collector Current, IC -- A 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 ou 0 s1 m nt ed s 100 1.0 7 5 3 2 0.1 7 5 3 2 on 0.01 0.01 CPH3145 / CPH3245 Ta=25C Single pulse For PNP minus sign is omitted Mounted on a ceramic board (600mm2!0.8mm) 23 5 7 0.1 23 5 7 1.0 23 5 7 10 23 57 Collector-to-Emitter Voltage, VCE -- V 10 0m er ati s s ac er am s on IT08939 op ic bo ar d (6 00 m m2 ! 0. 8m m ) 0 20 40 60 80 100 120 140 160 Ambient Temperature, Ta -- C IT08940 No.8166-4/5 CPH3145 / CPH3245 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of December, 2004. Specifications and information herein are subject to change without notice. PS No.8166-5/5 |
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