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IRFPS35N50L, SiHFPS35N50L
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
D
FEATURES
500 0.125 230 65 110 Single
VGS = 10 V
* Super Fast Body Diode Eliminates the Need for External Diodes in ZVS Applications Requirements
Available
* Lower Gate Charge Results in Simpler Drive RoHS*
COMPLIANT
* Enhanced dV/dt Capabilities Offer Improved Ruggedness * Higher Gate Voltage Threshold Offers Improved Noise Immunity * Lead (Pb)-free Available
SUPER-247TM
APPLICATIONS
* Zero Voltage Switching SMPS * Telecom and Server Power Supplies
S
G D G S N-Channel MOSFET
* Uninterruptible Power Supplies * Motor Control Applications
ORDERING INFORMATION
Package Lead (Pb)-free SnPb SUPER-247TM IRFPS35N50LPbF SiHFPS35N50L-E3 IRFPS35N50L SiHFPS35N50L
ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise noted
PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor Single Pulse Avalanche Energyb Repetitive Avalanche Currenta TC = 25 C Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery dV/dtc Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) Mounting Torque for 10 s 6-32 or M3 screw EAS IAR EAR PD dV/dt TJ, Tstg VGS at 10 V TC = 25 C TC = 100 C SYMBOL VDS VGS ID IDM LIMIT 500 30 34 22 140 3.6 560 34 45 450 15 - 55 to + 150 300d 10 1.1 W/C mJ A mJ W V/ns C lbf * in N*m A UNIT V
Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Starting TJ = 25 C, L = 0.97 mH, RG = 25 , IAS = 34 A (see fig. 12). c. ISD 34 A, dI/dt 765 A/s, VDD VDS, TJ 150 C. d. 1.6 mm from case. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91257 S-81368-Rev. A, 21-Jul-08 www.vishay.com 1
IRFPS35N50L, SiHFPS35N50L
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER Maximum Junction-to-Ambient Case-to-Sink, Flat, Greased Surface Maximum Junction-to-Case (Drain) Note a. Rth is measured at TJ approximately 90 C. SYMBOL RthJA RthCS RthJC TYP. 0.24 MAX. 40 0.28 C/W UNIT
SPECIFICATIONS TJ = 25 C, unless otherwise noted
PARAMETER Static Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance Forward Transconductance Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Effective Output Capacitance Effective Output Capacitance (Energy Related) Total Gate Charge Gate-Source Charge Gate-Drain Charge Internal Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulsed Diode Forward Currenta Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Reverse Recovery Current Forward Turn-On Time IS ISM VSD trr Qrr IRRM ton MOSFET symbol showing the integral reverse p - n junction diode
D
SYMBOL
TEST CONDITIONS
MIN. 500 3.0 18 -
TYP. 0.12 0.125 5580 590 58 7290 160 320 220 1.1 24 100 42 42
MAX. 5.0 100 50 2.0 0.145 230 65 110 -
UNIT V V/C V nA A mA S
VDS VDS/TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss Coss Coss eff. Coss eff. (ER) Qg Qgs Qgd RG td(on) tr td(off) tf
VGS = 0 V, ID = 250 A Reference to 25 C, ID = 1 mA VDS = VGS, ID = 250 A VGS = 30 V VDS = 500 V, VGS = 0 V VDS = 400 V, VGS = 0 V, TJ = 125 C VGS = 10 V ID = 20 Ab VDS = 50 V, ID = 20 Ab
VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5 VDS = 1.0 V , f = 1.0 MHz VDS = 400 V , f = 1.0 MHz VGS = 0 V VDS = 0 V to 400 Vc
pF
-
VGS = 10 V
ID = 34 A, VDS = 400 V, see fig. 7 and 13b
-
nC
f = 1 MHz, open drain VDD = 250 V, ID = 34 A, RG = 1.2 , see fig. 10b
ns
-
170 220 670 1500 8.5
34 A 140 1.5 250 330 1010 2200 V ns C A
G
S
TJ = 25 C, IS = 34 A, VGS = 0 Vb TJ = 25 C, IF = 34 A TJ = 125 C, dI/dt = 100 A/sb TJ = 25 C, IS = 34 A, VGS = 0 Vb TJ = 125 C, dI/dt = 100 TJ = 25 C A/sb
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 400 s; duty cycle 2 %. c. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80 % VDS. Coss eff. (ER) is a fixed capacitance that stores the same energy as Coss while VDS is rising from 0 to 80 % VDS. www.vishay.com 2 Document Number: 91257 S-81368-Rev. A, 21-Jul-08
IRFPS35N50L, SiHFPS35N50L
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 C, unless otherwise noted
1000
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP
1000
ID, Drain-to-Source Current (A)
100
I D , Drain-to-Source Current (A)
100
10
TJ = 150 C
10
1
0.1
1
4.5V
0.01
0.1
TJ = 25 C
V DS = 50V 20s PULSE WIDTH 5.0 6.0 7.0 8.0 9.0 10.0
0.001 0.1 1
20s PULSE WIDTH Tj = 25C
10 100
0.01 4.0
VDS, Drain-to-Source Voltage (V) Fig. 1 - Typical Output Characteristics
VGS , Gate-to-Source Voltage (V)
Fig. 3 - Typical Transfer Characteristics
1000
TOP
RDS(on) , Drain-to-Source On Resistance (Normalized)
I D , Drain-to-Source Current (A)
100
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V
3.0
ID = 34A
2.5
2.0
10
1.5
1.0
1
4.5V
0.5
0.1 0.1
20s PULSE WIDTH TJ = 150 C
1 10 100
0.0 -60 -40 -20
VGS = 10V
0 20 40 60 80 100 120 140 160
VDS , Drain-to-Source Voltage (V)
Fig. 2 - Typical Output Characteristics
TJ , Junction Temperature ( C) Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 91257 S-81368-Rev. A, 21-Jul-08
www.vishay.com 3
IRFPS35N50L, SiHFPS35N50L
Vishay Siliconix
100000
VGS , Gate-to-Source Voltage (V)
VGS = 0V, f = 1 MHZ Ciss = C + Cgd, C gs ds SHORTED Crss = C gd Coss = C + Cgd ds
20
ID = 34A VDS = 400V VDS = 250V VDS = 100V
10000
16
C, Capacitance(pF)
Ciss
12
1000
Coss
100
8
Crss
4
10 1 10 100 1000
0 0 40 80 120
FOR TEST CIRCUIT SEE FIGURE 13
160 200 240
VDS, Drain-to-Source Voltage (V) Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 7 - Typical Gate Charge vs. Gate-to-Source Voltage
QG , Total Gate Charge (nC)
30 25
1000
20
ISD , Reverse Drain Current (A)
100
Energy (J)
TJ = 150 C
10
15
10
5
1
TJ = 25 C
0 0 100 200 300 400 500 600
0.1 0.2 0.4 0.6 0.8 1.0 1.2
V GS = 0 V
1.4 1.6
VDS, Drain-to-Source Voltage (V)
VSD ,Source-to-Drain Voltage (V)
Fig. 8 - Typical Source Drain Diode Forward Voltage
Fig. 6 - Typical Output Capacitance Stored Energy vs. VDS
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Document Number: 91257 S-81368-Rev. A, 21-Jul-08
IRFPS35N50L, SiHFPS35N50L
Vishay Siliconix
RD VDS
35
RG
VGS
D.U.T. + - VDD
30
ID , Drain Current (A)
10 V
25 20 15
VDS
Pulse width 1 s Duty factor 0.1 %
Fig. 10a - Switching Time Test Circuit
10 5 0 25 50 75 100 125 150
90 %
TC , Case Temperature ( C)
Fig. 9 - Maximum Drain Current vs. Case Temperature
10 % VGS td(on) tr td(off) tf
Fig. 10b - Switching Time Waveforms
1
Thermal Response (Z thJC )
D = 0.50 0.1 0.20 0.10 0.05 0.02 0.01 PDM SINGLE PULSE (THERMAL RESPONSE) t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1
0.01
0.001 0.00001
t1 , Rectangular Pulse Duration (sec)
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
VDS
15 V
tp
VDS
L
Driver
RG 20 V tp
D.U.T IAS 0.01
+ A - VDD
A
A
IAS
Fig. 12b - Unclamped Inductive Waveforms www.vishay.com 5
Fig. 12a - Unclamped Inductive Test Circuit Document Number: 91257 S-81368-Rev. A, 21-Jul-08
IRFPS35N50L, SiHFPS35N50L
Vishay Siliconix
EAS , Single Pulse Avalanche Energy (mJ)
1200
TOP BOTTOM
1000
ID 15A 22A 34A
1000
OPERATION IN THIS AREA LIMITED BY RDS(on)
800
ID , Drain Current (A)
100 10us
600
100us 10 1ms
400
200
0 25 50 75 100 125 150
1 1
TC = 25 C TJ = 150 C Single Pulse
10 100
10ms 1000 10000
Starting TJ , Junction Temperature ( C)
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
VDS , Drain-to-Source Voltage (V)
Fig. 12d - Maximum Safe Operating Area
Current regulator Same type as D.U.T.
50 k
12 V
Current regulator Same type as D.U.T.
50 k
12 V
0.2 F 0.3 F
0.2 F
0.3 F
+
+
D.U.T. VGS
3 mA
-
VDS VGS
3 mA
D.U.T.
-
VDS
IG ID Current sampling resistors
IG ID Current sampling resistors
Fig. 13a - Gate Charge Test Circuit
Fig. 13b - Basic Gate Charge Waveform
www.vishay.com 6
Document Number: 91257 S-81368-Rev. A, 21-Jul-08
IRFPS35N50L, SiHFPS35N50L
Vishay Siliconix
Peak Diode Recovery dV/dt Test Circuit
D.U.T
+
Circuit layout considerations * Low stray inductance * Ground plane * Low leakage inductance current transformer
+ +
-
RG
* * * *
dV/dt controlled by RG Driver same type as D.U.T. ISD controlled by duty factor "D" D.U.T. - device under test
+ VDD
Driver gate drive P.W. Period D=
P.W. Period VGS = 10 V*
D.U.T. ISD waveform Reverse recovery current Body diode forward current dI/dt D.U.T. VDS waveform Diode recovery dV/dt
VDD
Re-applied voltage Inductor current
Body diode forward drop
Ripple 5 %
ISD
* VGS = 5 V for logic level devices
Fig. 14 - For N-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?91257.
Document Number: 91257 S-81368-Rev. A, 21-Jul-08
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Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000 Revision: 18-Jul-08
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