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SMD Type
Silicon PNP Epitaxial Planar Type 2SB968
TO-252
+0.15 1.50 -0.15
Transistors
Unit: mm 2.30
+0.8 0.50-0.7 +0.1 -0.1
Features
Possible to solder the radiation fin directly to printed cicuit board. High collector-emitter voltage VCEO.
+0.2 9.70 -0.2
6.50 +0.2 5.30-0.2
+0.15 -0.15
+0.1 0.80-0.1
+0.15 0.50 -0.15
0.127 max
2.3
+0.15 4.60-0.15
+0.1 0.60-0.1
+0.28 1.50 -0.1
+0.25 2.65 -0.1
+0.15 5.55 -0.15
Large collector power dissipation PC.
1 Base 2 Collector 3 Emitter
Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating -50 -40 -5 -1.5 -3 10 150 -55 to +150 Unit V V V A A W
Electrical Characteristics Ta = 25
Parameter Collector-base voltage Collector-emitter voltage Collector-base cutoff curent Collector cutoff curent Emitter-base cutoff current Forward current transfer ratio Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance Symbol VCBO VCEO ICBO ICEO IEBO hFE Testconditons IC = -1 mA, IE = 0 IC = -2 mA, IB = 0 VCB = -20 V,IE = 0 VCE = -10 V,IB = 0 VEB = -5 V, IC = 0 VCE = -5 V, IC = -1 A VCE = -5 V, IC = -1mA VCE(sat) IC = -1.5 A, IB = -0.15 A VBE(sat) IC = -2 A, IB = -0.2 A fT Cob VCE = -5 V, IC = -0.5 A , f = 200 MHz VCB = -20V , IE = 0 , f = 1.0MHz 150 45 80 10 -1 -1.5 V V MHz pF Min -50 -40 -1 -100 -10 220 Typ Max Unit V V iA iA iA V
hFE Classification
Rank hFE Q 80 160 R 120 220
3.80
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