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 Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC3168
DESCRIPTION *With TO-3 package *High voltage ,high speed APPLICATIONS *For power switching applications PINNING (See Fig.2)
PIN 1 2 3 Base Emitter Fig.1 simplified outline (TO-3) and symbol Collector DESCRIPTION
Absolute maximum ratings(Ta=25)
SYMBOL VCBO VCEO VEBO IC ICM IB IBM PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-Peak Base current Base current-Peak Total power dissipation Junction temperature Storage temperature Tmb=25 Open emitter Open base Open collector CONDITIONS MAX 500 400 7 20 40 7 14 200 200 -65~200 UNIT V V V A A A A W
THERMAL CHARACTERISTICS
SYMBOL Rth j-mb PARAMETER Thermal resistance from junction to mounting base VALUE 0.63 UNIT /W
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified SYMBOL VCEO(SUS) VCE(sat) VBE(sat) ICBO ICEO IEBO hFE fT PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=0.2A ; IB=0 IC=10A; IB=2A IC=10A; IB=2A At rated voltage At rated voltage At rated voltage IC=10A ; VCE=2V IC=2A ; VCE=10V 10 MIN 400
2SC3168
TYP.
MAX
UNIT V
1.0 1.5 0.1 0.1 0.1 40 20
V V mA mA mA
MHz
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC3168
Fig.2 Outline dimensions
3


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