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| SKR 5,6 Qu bond Absolute Maximum Ratings Symbol VRRM IF(AV) It IFSM Tjmax 2 Conditions Tj = 25 C, IR = 0.05 mA Ts = 80 C, Tj = 150 C Tj = 150 C, 10 ms, sin 180 10 ms sin 180 Tj = 25 C Tj = 150 C Values 1600 40 1201 635 490 150 Unit V A A2s A A C DIODE IF(DC) = 50 A VRRM = 1600 V Size: 5,6 mm x 5,6 mm SKR 5,6 Qu bond Electrical Characteristics Symbol IR VF V(TO) rT trr Conditions Tj = 25 C, VRRM Tj = 145 C, VRRM Tj = 25 C, IF = 25 A Tj = 125 C, IF = 25 A Tj = 125 C Tj = 125 C Tj = 25 C, 1 A min. typ. max. 0.05 1.1 Unit mA mA V V V m s 1 0.9 1.21 1.1 0.83 6.2 22 Features * high current density due to mesa technology * high surge current * compatible to thick wire bonding * compatible to all standard solder processes Thermal Characteristics Symbol Tj Tstg Tsolder Tsolder Rth(j-s) 10 min. 5 min. soldered on 0,38 mm DCB, reference point on copper heatsink close to the chip 1.2 Conditions min. -40 -40 typ. max. 150 150 250 320 Unit C C C C K/W Typical Applications * uncontrolled rectifier bridges Mechanical Characteristics Symbol Raster size Area total Anode Cathode Wire bond Package Chips / Package Conditions Values 5,6 x 5,6 31,36 bondable (Al) solderable (Ag/Ni) Al, diameter 500 m wafer frame 470 Unit mm mm2 pcs SKR (c) by SEMIKRON Rev. 0 - 22.09.2009 1 SKR 5,6 Qu bond This technical information specifies semiconductor devices. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. 2 Rev. 0 - 22.09.2009 (c) by SEMIKRON |
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