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 4V Drive Pch+Pch MOSFET
SH8J66
Structure Silicon P-channel MOSFET Dimensions (Unit : mm)
SOP8
Features 1) Low On-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (SOP8).
Applications Switching
Each lead has same dimensions
Packaging specifications
Package Type SH8J66 Code Basic ordering unit (pieces) Taping TB 2500
Inner circuit
(8) (7) (6) (5)
2
2
(1) Tr1 Source (2) Tr1 Gate (3) Tr2 Source (4) Tr2 Gate (5) Tr2 Drain (6) Tr2 Drain (7) Tr1 Drain (8) Tr1 Drain
Absolute maximum ratings (Ta=25C)
Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Total power dissipation Channel temperature Range of Storage temperature
1 Pw10s, Duty cycle1% 2 Mounted on a ceramic board
1
1
(1)
(2)
(3)
(4)
Continuous Pulsed Continuous Pulsed
Symbol VDSS VGSS ID IDP 1 IS ISP 1 PD Tch Tstg
2
Limits -30 20 9 36 -1.6 -36 2.0 1.4 150 -55 to +150
Unit V V A A A A W / TOTAL W / ELEMENT C C
1 ESD PROTECTION DIODE 2 BODY DIODE
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c 2010 ROHM Co., Ltd. All rights reserved.
1/5
2010.01 - Rev.A
SH8J66
Electrical characteristics (Ta=25C)
Parameter Symbol Min. Typ. - - - - 13.5 17.5 19.0 - 3000 400 400 20 60 170 100 35 9 12 Max. 10 - -1 -2.5 18.5 23.6 24.7 - - - - - - - - - - - Gate-source leakage - IGSS Drain-source breakdown voltage V(BR) DSS -30 Zero gate voltage drain current IDSS - Gate threshold voltage VGS (th) -1.0 - Static drain-source on-state - RDS (on) resistance - Yfs 11 Forward transfer admittance Input capacitance Ciss - Output capacitance - Coss Crss Reverse transfer capacitance - - Turn-on delay time td (on) tr - Rise time Turn-off delay time - td (off) tf Fall time - Qg Total gate charge - Gate-source charge Qgs - Gate-drain charge - Qgd
Pulsed
Data Sheet
Unit A V A V m m m S pF pF pF ns ns ns ns nC nC nC
Conditions VGS=20V, VDS=0V ID= -1mA, VGS=0V VDS= -30V, VGS=0V VDS= -10V, ID= -1mA ID= -9A, VGS= -10V ID= -4.5A, VGS= -4.5V ID= -4.5A, VGS= -4.0V VDS= -10V, ID= -9A VDS= -10V VGS=0V f=1MHz VDD -15V ID= -4.5A VGS= -10V RL=3.3 RG=10 VDD -15V ID= -9A VGS= -5V RL=1.7 / RG=10
Body diode characteristics (Source-drain) (Ta=25C)
Parameter Forward voltage
Pulsed
Symbol VSD
Min. -
Typ. -
Max. -1.2
Unit V
Conditions IS= -9A, VGS=0V
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c 2010 ROHM Co., Ltd. All rights reserved.
2/5
2010.01 - Rev.A
SH8J66
Electrical characteristic curves
20 18 DRAIN CURRENT : -ID [A] 16 14 12 10 8 6 4 2 0 0.0 0.2 0.4 0.6 0.8 1.0 DRAIN-SOURCE VOLTAGE : -VDS[V] Fig.1 Typical output characteristics( ) VGS= -2.5V VGS= -3.5V VGS= -3.0V VGS= -10V VGS= -4.5V VGS= -4.0V Ta=25C Pulsed DRAIN CURRENT : -ID [A] 20 18 16 14 12 10 8 6 4 2 0 0 2 4 6 8 10 DRAIN-SOURCE VOLTAGE : -VDS[V] Fig.2 Typical output characteristics( ) VGS= -2.2V 0.01 1.0 VGS= -2.5V VGS= -10V VGS= -4.0V VGS= -3.0V Ta=25C Pulsed DRAIN CURRENT : -ID [A] 100 VDS= -10V Pulsed
Data Sheet
10
Ta= 125C Ta= 75C Ta= 25C Ta= - 25C
1
0.1
1.5
2.0
2.5
3.0
GATE-SOURCE VOLTAGE : -VGS[V] Fig.3 Typical Transfer Characteristics
100 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : R DS(on) [m]
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : R DS(on) [m]
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) [m]
Ta=25C Pulsed
100
VGS= -10V Pulsed
100
VGS= -4.5V Pulsed
10
VGS= -4.0V VGS= -4.5V VGS= -10V
10 Ta=125C Ta=75C Ta=25C Ta= -25C
10
Ta=125C Ta=75C Ta=25C Ta= -25C
1 0.1 1 DRAIN-CURRENT : -ID [A] 10
1 0.1 1 DRAIN-CURRENT : -ID [A] Fig.5 Static Drain-Source On-State Resistance vs. Drain Current( ) 10
1 0.1 1 DRAIN-CURRENT : -ID [A] Fig.6 Static Drain-Source On-State Resistance vs. Drain Current( ) 10
Fig.4 Static Drain-Source On-State Resistance vs. Drain Current(I)
100 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) [m]
FORWARD TRANSFER ADMITTANCE : |Yfs| [S]
REVERSE DRAIN CURRENT : -Is [A]
VGS= -4.0V Pulsed
100 VDS= -10V Pulsed
100 VGS=0V Pulsed 10 Ta=125C Ta=75C Ta=25C Ta=-25C
10
10
Ta=125C Ta=75C Ta=25C Ta= -25C
1
1
Ta= -25C Ta=25C Ta=75C Ta=125C
0.1
1 0.1 1 DRAIN-CURRENT : -ID [A] Fig.7 Static Drain-Source On-State Resistance vs. Drain Current( V) 10
0 0.1 1 DRAIN-CURRENT : -ID [A] Fig.8 Forward Transfer Admittance vs. Drain Current 10
0.01 0.0
0.2 0.4 0.6 0.8 1.0 SOURCE-DRAIN VOLTAGE : -VSD [V] Fig.9 Reverse Drain Current vs. Sourse-Drain Voltage
1.2
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c 2010 ROHM Co., Ltd. All rights reserved.
3/5
2010.01 - Rev.A
SH8J66
50 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : R DS(on) [m] 45 40 35 30 25 20 15 10 0 5 10 15 GATE-SOURCE VOLTAGE : -VGS[V] Fig.10 Static Drain-Source On-State Resistance vs. Gate Source Voltage DRAIN-CURRENT : -ID [A] Fig.11 Switching Characteristics 1 0.01 0.1 1 10 ID = -4.5A ID = -9.0A Ta=25C Pulsed 10000 td(off) Switching Time : t [ns] 1000 tf Ta=25C VDD = -15V VGS=-10V RG=10 Pulsed 10 GATE-SOURCE VOLTAGE : -VGS [V]
Data Sheet
8
6
100
4 Ta=25C VDD = -15V ID = -9.0A R G=10 Pulsed 0 10 20 30 40 50 60 70
10 tr td(on)
2
0
TOTAL GATE CHARGE : Qg [nC] Fig.12 Dynamic Input Characteristics
10000
1000
Operation in this area is limited by RDS(on) (VGS=-10V)
1000
DRAIN CURRENT : -ID (A)
Ciss CAPACITANCE : C [pF]
100
PW=100us
10
PW = 10ms
Crss 100 Coss Ta=25C f=1MHz VGS=0V 10 0.01 0.1 1 10 100
1
PW=1ms
0.1
Ta = 25C Single Pulse MOUNTED ON CERAMIC BOARD
0.01 0.1
DC operation
1
10
100
DRAIN-SOURCE VOLTAGE : -VDS[V] DRAIN-SOURCE VOLTAGE : -VDS[V] Fig.13 Typical Capacitance vs. Drain-Source Voltage Fig.14 Maximum Safe Operating Aera
NORMARIZED TRANSIENT THERMAL
10 RESISTANCE : r (t) 1 0.1
T a = 25C Single Pulse : 1Unit
0.01 0.001 0.001 0.01 0.1
Rth(ch-a)(t) = r(t)xRth(ch-a) Rth(ch-a) = 89.3 C/W
1
10
100
1000
PULSE WIDTH : Pw(s)
Fig.15 Normalized Transient Thermal Resistance vs. Pulse Width
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c 2010 ROHM Co., Ltd. All rights reserved.
4/5
2010.01 - Rev.A
SH8J66
Measurement circuits
Pulse Width
Data Sheet
VGS
ID RL D.U.T.
VDS
VGS
10% 50% 10%
90%
50% 10% 90%
RG VDD
VDS
90% td(on) ton tr td(off) toff
tf
Fig.1-1 Switching Time Test Circuit
Fig.1-2 Switching Time Waveforms
VG
VGS ID RL IG(Const.) D.U.T. RG VDD VDS
Qg VGS Qgs Qgd
Charge
Fig.2-1 Gate Charge Test Circuit
Fig.2-2 Gate Charge Waveform
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c 2010 ROHM Co., Ltd. All rights reserved.
5/5
2010.01 - Rev.A
Notice
Notes
No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. Great care was taken in ensuring the accuracy of the information specified in this document. However, should you incur any damage arising from any inaccuracy or misprint of such information, ROHM shall bear no responsibility for such damage. The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM and other parties. ROHM shall bear no responsibility whatsoever for any dispute arising from the use of such technical information. The Products specified in this document are intended to be used with general-use electronic equipment or devices (such as audio visual equipment, office-automation equipment, communication devices, electronic appliances and amusement devices). The Products specified in this document are not designed to be radiation tolerant. While ROHM always makes efforts to enhance the quality and reliability of its Products, a Product may fail or malfunction for a variety of reasons. Please be sure to implement in your equipment using the Products safety measures to guard against the possibility of physical injury, fire or any other damage caused in the event of the failure of any Product, such as derating, redundancy, fire control and fail-safe designs. ROHM shall bear no responsibility whatsoever for your use of any Product outside of the prescribed scope or not in accordance with the instruction manual. The Products are not designed or manufactured to be used with any equipment, device or system which requires an extremely high level of reliability the failure or malfunction of which may result in a direct threat to human life or create a risk of human injury (such as a medical instrument, transportation equipment, aerospace machinery, nuclear-reactor controller, fuel-controller or other safety device). ROHM shall bear no responsibility in any way for use of any of the Products for the above special purposes. If a Product is intended to be used for any such special purpose, please contact a ROHM sales representative before purchasing. If you intend to export or ship overseas any Product or technology specified herein that may be controlled under the Foreign Exchange and the Foreign Trade Law, you will be required to obtain a license or permit under the Law.
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