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  Datasheet File OCR Text:
 SKR 18,2 Qu bond
Absolute Maximum Ratings Symbol
VRRM IF(AV) It IFSM Tjmax
2
Conditions
Tj = 25 C, IR = 2 mA Tc = 80 C, Tj = 150 C Tj = 150 C, 10 ms, sin 180 10 ms sin 180 Tj = 25 C Tj = 150 C
Values
1600 320 151250 7000 5500 150
Unit
V A A2s A A C
DIODE
IF(DC) = 380 A VRRM = 1600 V Size: 18,2 mm x 18,2 mm
Electrical Characteristics Symbol
IR VF V(TO) rT
Conditions
Tj = 25 C, VRRM Tj = 120 C, VRRM Tj = 25 C, IF = 360 A Tj = 125 C, IF = 360 A Tj = 125 C Tj = 125 C Tj = 25 C, 1 A
min.
typ.
max.
2 3.3
Unit
mA mA V V V m s
1 0.9
1.21 1.1 0.83 0.5
SKR 18,2 Qu bond
trr
53
Thermal Characteristics
Features
* high current density due to mesa technology * high surge current * compatible to thick wire bonding * compatible to all standard solder processes
Symbol
Tj Tstg Tsolder Tsolder Rth(j-c)
Conditions
min.
-40 -40
typ.
max.
150 150 250 320
Unit
C C C C K/W
10 min. 5 min. Semipack 2 assembly 0.18
Typical Applications
* uncontrolled rectifier bridges
Mechanical Characteristics Symbol
Raster size Area total Anode Cathode Wire bond Package Chips / Package
Conditions
Values
18,2 x 18,2 331,24 bondable (Al) solderable (Ag/Ni) Al, diameter 500 m tray 16
Unit
mm mm2
pcs
SKR (c) by SEMIKRON Rev. 0 - 02.10.2009 1
SKR 18,2 Qu bond
This technical information specifies semiconductor devices. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability.
2
Rev. 0 - 02.10.2009
(c) by SEMIKRON


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