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| IRFI820G, SiHFI820G Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 24 3.3 13 Single D FEATURES 500 3.0 * Isolated Package * High Voltage Isolation = 2.5 kVRMS (t = 60 s, f = 60 Hz) * Sink to Lead Creepage Distance = 4.8 mm * Dynamic dV/dt Rating * Low Thermal Resistance * Lead (Pb)-free Available Available RoHS* COMPLIANT TO-220 FULLPAK DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applications. The molding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. The isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The FULLPAK is mounted to a heatsink using a single clip or by a single screw fixing. G S GDS N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free SnPb TO-220 FULLPAK IRFI820GPbF SiHFI820G-E3 IRFI820G SiHFI820G ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise noted PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Linear Derating Factor Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery dV/dtc Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) Mounting Torque Currenta VGS at 10 V TC = 25 C TC = 100 C SYMBOL VDS VGS ID IDM EAS IAR EAR PD dV/dt TJ, Tstg LIMIT 500 20 2.1 1.3 8.4 0.24 110 2.1 3.0 30 3.5 - 55 to + 150 300d 10 1.1 UNIT V A W/C mJ A mJ W V/ns C lbf * in N*m TC = 25 C for 10 s 6-32 or M3 screw Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 50 V, starting TJ = 25 C, L = 44 mH, RG = 25 , IAS = 2.1 A (see fig. 12). c. ISD 2.1 A, dI/dt 50 A/s, VDD VDS, TJ 150 C. d. 1.6 mm from case. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91158 S-81290-Rev. A, 16-Jun-08 www.vishay.com 1 IRFI820G, SiHFI820G Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Maximum Junction-to-Case (Drain) SYMBOL RthJA RthJC TYP. MAX. 65 4.1 UNIT C/W SPECIFICATIONS TJ = 25 C, unless otherwise noted PARAMETER Static Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance Forward Transconductance Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance Drain to Sink Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulsed Diode Forward Currenta Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Forward Turn-On Time IS ISM VSD trr Qrr ton MOSFET symbol showing the integral reverse p - n junction diode D SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT VDS VDS/TJ VGS(th) IGSS IDSS RDS(on) gfs VGS = 0 V, ID = 250 A Reference to 25 C, ID = 1 mA VDS = VGS, ID = 250 A VGS = 20 V VDS = 500 V, VGS = 0 V VDS = 400 V, VGS = 0 V, TJ = 125 C VGS = 10 V ID = 1.3 Ab VDS = 50 V, ID = 1.3 Ab 500 2.0 1.5 0.59 - 4.0 100 25 250 3.0 - V V/C V nA A S Ciss Coss Crss C Qg Qgs Qgd td(on) tr td(off) tf LD LS VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5 f = 1.0 MHz ID = 2.1 A, VDS = 400 V, see fig. 6 and 13b - 360 92 37 12 8.0 8.6 33 16 4.5 7.5 24 3.3 13 nH ns nC pF VGS = 10 V - VDD = 250 V, ID = 2.1 A , RG = 18 , RD = 120 , see fig. 10b - Between lead, 6 mm (0.25") from package and center of die contact D - G S - 260 0.70 2.1 A 8.0 1.6 520 1.4 V ns C G S TJ = 25 C, IS = 2.1 A, VGS = 0 Vb TJ = 25 C, IF = 2.1 A, dI/dt = 100 A/sb Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 s; duty cycle 2 %. www.vishay.com 2 Document Number: 91158 S-81290-Rev. A, 16-Jun-08 IRFI820G, SiHFI820G Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless otherwise noted Fig. 1 - Typical Output Characteristics, TC = 25 C Fig. 3 - Typical Transfer Characteristics Fig. 2 - Typical Output Characteristics, TC = 150 C Fig. 4 - Normalized On-Resistance vs. Temperature Document Number: 91158 S-81290-Rev. A, 16-Jun-08 www.vishay.com 3 IRFI820G, SiHFI820G Vishay Siliconix Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 7 - Typical Source-Drain Diode Forward Voltage Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage Fig. 8 - Maximum Safe Operating Area www.vishay.com 4 Document Number: 91158 S-81290-Rev. A, 16-Jun-08 IRFI820G, SiHFI820G Vishay Siliconix RD VDS VGS RG D.U.T. + - VDD 10 V Pulse width 1 s Duty factor 0.1 % Fig. 10a - Switching Time Test Circuit VDS 90 % 10 % VGS td(on) tr td(off) tf Fig. 9 - Maximum Drain Current vs. Case Temperature Fig. 10b - Switching Time Waveforms Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case L Vary tp to obtain required IAS RG VDS tp VDD D.U.T I AS 10 V tp 0.01 IAS + V DD VDS VDS Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms Document Number: 91158 S-81290-Rev. A, 16-Jun-08 www.vishay.com 5 IRFI820G, SiHFI820G Vishay Siliconix Fig. 12c - Maximum Avalanche Energy vs. Drain Current Current regulator Same type as D.U.T. 50 k 12 V 0.2 F 0.3 F VGS QGS QG QGD D.U.T. + - VDS VG VGS 3 mA Charge IG ID Current sampling resistors Fig. 13a - Basic Gate Charge Waveform Fig. 13b - Gate Charge Test Circuit www.vishay.com 6 Document Number: 91158 S-81290-Rev. A, 16-Jun-08 IRFI820G, SiHFI820G Vishay Siliconix Peak Diode Recovery dV/dt Test Circuit D.U.T + Circuit layout considerations * Low stray inductance * Ground plane * Low leakage inductance current transformer + + - RG * * * * dV/dt controlled by RG Driver same type as D.U.T. ISD controlled by duty factor "D" D.U.T. - device under test + VDD Driver gate drive P.W. Period D= P.W. Period VGS = 10 V* D.U.T. ISD waveform Reverse recovery current Body diode forward current dI/dt D.U.T. VDS waveform Diode recovery dV/dt VDD Re-applied voltage Inductor current Body diode forward drop Ripple 5 % ISD * VGS = 5 V for logic level devices Fig. 14 - For N-Channel Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?91158. Document Number: 91158 S-81290-Rev. A, 16-Jun-08 www.vishay.com 7 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1 |
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