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| P N P S I L I C O N T RAN S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HA92 T stg Tj PC VCBO VCEO HIGH VOLTAGE TRANSISTOR ABSOLUTE MAXIMUM RATINGS Storage Temperature - Junction Temperature - - - - Collector Dissipation- Collector-Base Voltage- Collector-Emitter Voltage- Emitter-Base Voltage - Collector Current - - - - ----- - - - ----- - - - Ta=25ae(c) -55~150ae 150ae 625mW -300V -300V -5V -500mA TO-92 1D Emitter E 2D Base B 3D Collector C V EBO IC ELECTRICAL CHARACTERISTICS Characteristics Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter-Base Cut-off Current Collector Cut-off Current Ta=25ae(c) Typ Max Unit Test Conditions Symbol Min BVCBO BVCEO BVEBO ICBO IEBO ICES HFE HFE HFE 1(c) 2(c) 3(c) -300 -300 -5 -250 -100 -100 25 40 50 V V V nA nA nA IC=-100|I IE=-100|I A, IE=0 A IC=0 IC=-1mA, IB=0 VCB=-200V, IE=0 VEB=-3V, IC=0 VCE=-300V, VBE=0 VCE=-10V, IC=-1mA VCE=-10V, IC=-10mA VCE=-10V, IC=-30mA DC Current Gain VCE(sat1) VCE(sat2) VBE(sat1) Collector- Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain-Bandwidth Product 50 -0.5 -1 -0.9 V V V MHz IC=-20mA, IB=-2mA IC=-60mA, IB=-6mA IC=-20mA, IB=-2mA VCE=-20V, IC=-10mA F=100MHz fT |
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