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| SPN4546 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN4546 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application , notebook computer power management and other battery powered circuits where high-side switching . FEATURES 40V/6.0A,RDS(ON)= 48 m@VGS= 10V 40V/5.0A,RDS(ON)= 55 m@VGS= 4.5V 40V/4.5A,RDS(ON)= 80 m@VGS= 2.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOP - 8P package design APPLICATIONS Power Management in Note book Portable Equipment Battery Powered System DC/DC Converter Load Switch DSC LCD Display inverter PIN CONFIGURATION(SOP - 8P) PART MARKING 2008/11/10 Ver.1 Page 1 SPN4546 N-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin 1 2 3 4 5 6 7 8 ORDERING INFORMATION Part Number SPN4546S8RGB Symbol S S S G D D D D Description Source Source Source Gate Drain Drain Drain Drain Package SOP- 8P Part Marking SPN4546 SPN4546S8RGB 13" Tape Reel ; Pb - Free ; Halogen - Free ABSOULTE MAXIMUM RATINGS (TA=25 Unless otherwise noted) Parameter Drain-Source Voltage Gate -Source Voltage Continuous Drain Current(TJ=150) Pulsed Drain Current Continuous Source Current(Diode Conduction) Power Dissipation Operating Junction Temperature Storage Temperature Range Thermal Resistance-Junction to Ambient TA=25 TA=70 TA=25 TA=70 Symbol VDSS VGSS ID IDM IS PD TJ TSTG RJA Typical 40 12 Unit V V A A A W /W 6.0 5.0 30 2.3 2.5 1.6 -55/150 -55/150 80 2008/11/10 Ver.1 Page 2 SPN4546 N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TA=25 Unless otherwise noted) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current Zero Gate Voltage Drain Current On-State Drain Current Drain-Source On-Resistance Forward Transconductance Diode Forward Voltage Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Time Turn-Off Time Symbol Conditions Min. Typ Max. Unit V(BR)DSS VGS=0V,ID=250uA VGS(th) VDS=VGS,ID=250uA IGSS IDSS ID(on) VDS=0V,VGS=12V VDS=40V,VGS=0V VDS=40V,VGS=0V TJ=85 VDS= 5V,VGS =4.5V 40 0.5 1.2 100 1 5 10 0.040 0.047 0.072 13 0.8 16 3 2.5 15 20 12 20 80 0.048 0.055 0.080 1.2 24 V nA uA A S V VGS= 10V,ID=6.0A RDS(on) VGS=4.5V,ID=5.0A VGS=2.5V,ID=4.5A gfs VDS=15V,ID=6.2A VSD Qg Qgs Qgd td(on) tr td(off) tf VDD=15V,RL=15 ID1.0A,VGEN=10V RG=6 IS=2.3A,VGS =0V VDS=15V,VGS=10V ID= 2A nC 6 10 40 nS 2008/11/10 Ver.1 Page 3 SPN4546 N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS 2008/11/10 Ver.1 Page 4 SPN4546 N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS 2008/11/10 Ver.1 Page 5 SPN4546 N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS 2008/11/10 Ver.1 Page 6 SPN4546 N-Channel Enhancement Mode MOSFET SOP- 8 PACKAGE OUTLINE 2008/11/10 Ver.1 Page 7 SPN4546 N-Channel Enhancement Mode MOSFET Information provided is alleged to be exact and consistent. SYNC Power Corporation presumes no responsibility for the penalties of use of such information or for any violation of patents or other rights of third parties which may result from its use. No license is granted by allegation or otherwise under any patent or patent rights of SYNC Power Corporation. Conditions mentioned in this publication are subject to change without notice. This publication surpasses and replaces all information previously supplied. SYNC Power Corporation products are not authorized for use as critical components in life support devices or systems without express written approval of SYNC Power Corporation. (c)The SYNC Power logo is a registered trademark of SYNC Power Corporation (c)2004 SYNC Power Corporation - Printed in Taiwan - All Rights Reserved SYNC Power Corporation 9F-5, No.3-2, Park Street NanKang District (NKSP), Taipei, Taiwan 115 Phone: 886-2-2655-8178 Fax: 886-2-2655-8468 (c)http://www.syncpower.com 2008/11/10 Ver.1 Page 8 |
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