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| MMBT3906 PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database. Features * * * * * * Epitaxial Planar Die Construction Complementary NPN Type Available (MMBT3904) Ideal for Low Power Amplification and Switching Lead, Halogen and Antimony Free, RoHS Compliant (Note 2) "Green" Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Mechanical Data * * * * * * * * Case: SOT-23 Case Material: Molded Plastic, "Green" Molding Compound, (Note 3). UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020D Terminal Connections: See Diagram Terminals: Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). Solderable per MIL-STD-202, Method 208 Marking Information: See Page 3 Ordering Information: See Page 3 Weight: 0.008 grams (approximate) C B Top View E Device Schematic Maximum Ratings @TA = 25C unless otherwise specified Symbol VCBO VCEO VEBO IC Value -40 -40 -5.0 -200 Unit V V V mA Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous (Note 1) Thermal Characteristics Characteristic Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient (Note 1) Operating and Storage and Temperature Range Notes: Symbol PD RJA TJ, TSTG Value 300 417 -55 to +150 Unit mW C/W C 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. No purposefully added lead. 3. Product manufactured with Data Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date Code V9 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants. MMBT3906 Document number: DS30059 Rev. 14 - 2 1 of 4 www.diodes.com December 2008 (c) Diodes Incorporated MMBT3906 Electrical Characteristics @TA = 25C unless otherwise specified Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICEX ICBO IBL Min -40 -40 -5.0 60 80 100 60 30 -0.65 2.0 0.1 100 3.0 250 Max -50 -50 -50 300 -0.25 -0.40 -0.85 -0.95 4.5 10 12 10 400 60 4.0 35 35 225 75 Unit V V V nA nA nA Test Condition IC = -10A, IE = 0 IC = -1.0mA, IB = 0 IE = -10A, IC = 0 VCE = -30V, VEB(OFF) = -3.0V VCB = -30V, IE = 0 VCE = -30V, VEB(OFF) = -3.0V IC = -100A, VCE = -1.0V IC = -1.0mA, VCE = -1.0V IC = -10mA, VCE = -1.0V IC = -50mA, VCE = -1.0V IC = -100mA, VCE = -1.0V IC = -10mA, IB = -1.0mA IC = -50mA, IB = -5.0mA IC = -10mA, IB = -1.0mA IC = -50mA, IB = -5.0mA VCB = -5.0V, f = 1.0MHz, IE = 0 VEB = -0.5V, f = 1.0MHz, IC = 0 VCE = 10V, IC = 1.0mA, f = 1.0kHz VCE = -20V, IC = -10mA, f = 100MHz VCE = -5.0V, IC = -100A, RS = 1.0k, f = 1.0kHz VCC = -3.0V, IC = -10mA, VBE(off) = 0.5V, IB1 = -1.0mA VCC = -3.0V, IC = -10mA, IB1 = IB2 = -1.0mA Characteristic OFF CHARACTERISTICS Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage (Note 4) Emitter-Base Breakdown Voltage Collector Cutoff Current Base Cutoff Current ON CHARACTERISTICS (Note 4) DC Current Gain hFE Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage SMALL SIGNAL CHARACTERISTICS Output Capacitance Input Capacitance Input Impedance Voltage Feedback Ratio Small Signal Current Gain Output Admittance Current Gain-Bandwidth Product Noise Figure SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time Notes: 4. Short duration pulse test used to minimize self-heating effect. VCE(SAT) VBE(SAT) Cobo Cibo hie hre hfe hoe fT NF td tr ts tf V V pF pF k -4 x 10 S MHz dB ns ns ns ns 400 350 PD, POWER DISSIPATION (mW) 300 250 200 150 100 50 0 25 50 75 100 125 150 175 200 TA, AMBIENT TEMPERATURE (C) Fig. 1 Power Dissipation vs. Ambient Temperature (Note 1) 0 IC, COLLECTOR CURRENT (A) 1 0.1 DC Pw = 10ms Pw = 100ms 0.01 0.001 TA = 25C Single Non-repetitive Pulse DUT mounted onto 1xMRP FR-4 board 0.1 1 10 100 VCE, COLLECTOR-EMITTER VOLTAGE (V) Fig. 2 Typical Collector Current vs. Collector-Emitter Voltage MMBT3906 Document number: DS30059 Rev. 14 - 2 2 of 4 www.diodes.com December 2008 (c) Diodes Incorporated MMBT3906 1,000 10 VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V) 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 3 Typical DC Current Gain vs. Collector Current (DRDP02W) IC IB = 10 hFE, DC CURRENT GAIN 1 100 10 0.1 1 0.1 1,000 0.01 1 10 100 1,000 IC, COLLECTOR CURRENT (mA) Fig. 4 Typical Collector-Emitter Saturation Voltage vs. Collector Current VBE(SAT), BASE-EMITTER SATURATION VOLTAGE (V) 10 100 f = 1MHz 1 CAPACITANCE (pF) T A = -25C TA = 125C 10 TA = 25C TA = 75C Cibo 0.1 0.1 10 1,000 1 100 IC, COLLECTOR CURRENT (mA) Fig. 5 Typical Base-Emitter Saturation Voltage vs. Collector Current 1 0.1 Cobo 1 10 VR, REVERSE VOLTAGE (V) Fig. 6 Typical Capacitance Characteristics 100 Ordering Information Part Number MMBT3906 -7-F Notes: (Note 5) Case SOT-23 Packaging 3000/Tape & Reel 5. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information K3N = Product Type Marking Code YM = Date Code Marking Y = Year (ex: N = 2002) M = Month (ex: 9 = September) K3N Date Code Key Year 1998 Code J Month Code Jan 1 1999 K 2000 L Feb 2 2001 M Mar 3 2002 N 2003 P Apr 4 2004 2005 R S May 5 YM 2006 T Jun 6 2007 U Jul 7 2008 V 2009 W Aug 8 2010 X Sep 9 2011 2012 Y Z Oct O 2013 A Nov N 2014 B 2015 C Dec D MMBT3906 Document number: DS30059 Rev. 14 - 2 3 of 4 www.diodes.com December 2008 (c) Diodes Incorporated MMBT3906 Package Outline Dimensions A BC H K D J F G L M K1 SOT-23 Dim Min Max Typ A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.50 2.40 D 0.89 1.03 0.915 F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.013 0.10 0.05 K 0.903 1.10 1.00 K1 0.400 L 0.45 0.61 0.55 M 0.085 0.18 0.11 0 8 All Dimensions in mm Suggested Pad Layout Y Z C Dimensions Value (in mm) Z 2.9 X 0.8 Y 0.9 C 2.0 E 1.35 X E IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. MMBT3906 Document number: DS30059 Rev. 14 - 2 4 of 4 www.diodes.com December 2008 (c) Diodes Incorporated |
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