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| 4V Drive Nch+SBD MOSFET ES6U3 Structure Silicon N-channel MOSFET / Schottky barrier diode Dimensions (Unit : mm) WEMT6 (6) (5) (4) Features 1) Nch MOSFET and schottky barrier diode are put in WEMT6 package. 2) High-speed switching, Low On-resistance. 3) Built-in Low VF schottky barrier diode. (1) (2) (3) Abbriviated symbol : U03 Applications Switching Inner circuit (6) (5) (4) Package specifications Package Type ES6U3 Code Basic ordering unit (pieces) Taping T2R 8000 (1) 1 ESD protection diode 2 Body diode 2 (1)Gate (2)Source (3)Anode (4)Cathode (5)Drain (6)Drain 1 (2) (3) Absolute maximum ratings (Ta=25C) 1 Pw10s, Duty cycle1% 2 Mounted on a ceramic board Continuous Pulsed Continuous Pulsed Symbol VDSS VGSS ID IDP 1 IS ISP 1 Tch PD 2 Limits 30 20 1.4 2.8 0.5 2.8 150 0.7 Unit V V A A A A C W / ELEMENT 1 60Hz 1cyc. 2 Mounted on a ceramic board Symbol VRM VR IF IFSM Tj PD 1 Limits 25 20 0.5 2.0 150 0.5 Unit V V A A C W / ELEMENT 2 Mounted on a ceramic board Symbol PD Tstg Limits 0.8 -55 to +150 Unit W / TOTAL C www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. 1/4 2009.03 - Rev.A ES6U3 Electrical characteristics (Ta=25C) Data Sheet Symbol IGSS Gate-source leakage Drain-source breakdown voltage V(BR) DSS Zero gate voltage drain current IDSS Gate threshold voltage VGS (th) Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge Pulsed RDS (on) Yfs Ciss Coss Crss td (on) tr td (off) tf Qg Qgs Qgd Min. - 30 - 1.0 - - - 1 - - - - - - - - - - Typ. - - - - 170 250 270 - 70 15 12 6 6 13 8 1.4 0.6 0.3 Max. 10 - 1 2.5 240 350 380 - - - - - - - - - - - Unit A V A V m m m S pF pF pF ns ns ns ns nC nC nC Conditions VGS=20V, VDS=0V ID= 1mA, VGS=0V VDS= 30V, VGS=0V VDS= 10V, ID= 1mA ID= 1.4A, VGS= 10V ID= 1.4A, VGS= 4.5V ID= 1.4A, VGS= 4V VDS= 10V, ID= 1.4A VDS= 10V VGS=0V f=1MHz VDD 15V ID= 0.7A VGS= 10V RL 21 RG= 10 VDD 15V, VGS= 5V ID= 1.4A, RL 11 RG= 10 Parameter Symbol Min. Forward voltage Pulsed Typ. - Max. 1.2 VSD - Unit V Conditions IS= 1.4A, VGS=0V www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. 2/4 2009.03 - Rev.A ES6U3 Electrical characteristics curves < MOSFET > 1000 Ta=25C f=1MHz VGS=0V 1000 Ta=25C VDD=15V VGS=10V RG=10 Pulsed 10 Ta=25C 9 VDD=15V ID=1.4A 8 RG=10 Pulsed 7 6 5 4 3 2 1 0 0 1 2 Data Sheet tf 100 100 Ciss td (off) 10 Coss Crss 10 td (on) tr 1 0.01 0.1 1 10 100 1 0.01 0.1 1 10 GATE SOURCE VOLTAGE : VGS (V) SWITCHING TIME : t (ns) CAPACITANCE : C (pF) 3 DRAIN-SOURCE VOLTAGE : VDS (V) DRAIN CURRENT : ID (A) TOTAL GATE CHARGE : Qg (nC) Fig.1 Typical Capacitance vs. Drain-Source Voltage STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (m)1 10 VDS=10V Pulsed Fig.2 Switching Characteristics 000 10 Fig.3 Dynamic Input Characteristics Ta=25C 900 Pulsed 800 700 600 500 ID=0.7A ID=1.4A VGS=0V Pulsed 1 0.1 Ta=125C Ta=75C Ta=25C Ta= -25C SOURCE CURRENT : IS (A) DRAIN CURRENT : ID (A) 1 Ta=125C Ta=75C Ta=25C Ta= -25C 400 300 200 100 0 0 2 4 6 8 10 0.1 0.01 0.001 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0.01 0.0 0.5 1.0 1.5 GATE-SOURCE VOLTAGE : VGS (V) GATE SOURCE VOLTAGE : VGS (V) SOURCE-DRAIN VOLTAGE : VSD (V) Fig.4 Typical Transfer Characteristics Fig.5 Static Drain-Source On-State Resistance vs. Gate-Source Voltage Fig.6 Source Current vs. Source-Drain Voltage VGS=10V Pulsed Ta=125C Ta=75C Ta=25C Ta= -25C VGS=4.5V Pulsed Ta=125C Ta=75C Ta=25C Ta= -25C STATIC DRAIN- SOURCE ON-STATE RESISTANCE : RDS (on) (m) STATIC DRAIN- SOURCE ON-STATE RESISTANCE : RDS(on) (m) STATIC DRAIN- SOURCE ON-STATE RESISTANCE : RDS(on) (m) 10000 10000 10000 VGS=4V Pulsed Ta=125C Ta=75C Ta=25C Ta= -25C 1000 1000 1000 100 100 100 10 0.01 0.1 1 10 10 0.01 0.1 1 10 10 0.01 0.1 1 10 DRAIN CURRENT : ID (A) DRAIN CURRENT : ID (A) DRAIN CURRENT : ID (A) Fig.7 Static Drain-Source On-State Resistance vs. Drain Current ( ) Fig.8 Static Drain-Source On-State Resistance vs. Drain Current ( ) Fig.9 Static Drain-Source On-State Resistance vs. Drain Current ( ) STATIC DRAIN- SOURCE ON-STATE RESISTANCE : RDS (on) (m) 1000 Ta=25C Pulsed VGS=4V VGS=4.5V VGS=10V 100 0.1 1 10 DRAIN CURRENT : ID (A) Fig.10 Static Drain-Source On-State Resistance vs. Drain Current ( ) www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. 3/4 2009.03 - Rev.A ES6U3 < Di > 100000 10000 REVERSE CURRENT : IF ( A) Ta = 75 1000 100 10 1 0.1 0.01 0 5 10 15 20 25 REVERSE VOLTAGE : VR[V] Fig.1 Reverse Current vs. Reverse Voltage Ta= - 25 Ta = 25 pulsed FORWARD CURRENT : IF (A) 1 pulsed Data Sheet 0.1 Ta = 75 Ta = 25 0.01 Ta= - 25 0.001 0 0.1 0.2 0.3 0.4 0.5 0.6 FORWARD VOLTAGE : VF[V] Fig.2 Forward Current vs. Forward Voltage Measurement circuit Pulse Width ID VGS RL D.U.T. RG VDD VDS VGS VDS 50% 10% 10% 90% tr ton 90% 50% 10% 90% td(off) toff tf td(on) Fig.1-1 Switching Time Measurement Circuit Fig.1-2 Switching Waveforms VG ID VGS RL IG(Const.) RG D.U.T. VDD VDS Qg VGS Qgs Qgd Charge Fig.2-1 Gate Charge Measurement Circuit FIg.2-2 Gate Charge Waveform Notice 1. SBD has a large reverse leak current compared to other type of diode. Therefore; it would raise a junction temperature, and increase a reverse power loss. Further rise of inside temperature would cause a thermal runaway. This built-in SBD has low VF characteristics and therefore, higher leak current. Please consider enough the surrounding temperature, generating heat of MOSFET and the reverse current. 2. This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit. www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. 4/4 2009.03 - Rev.A Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. Great care was taken in ensuring the accuracy of the information specified in this document. However, should you incur any damage arising from any inaccuracy or misprint of such information, ROHM shall bear no responsibility for such damage. The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM and other parties. ROHM shall bear no responsibility whatsoever for any dispute arising from the use of such technical information. The Products specified in this document are intended to be used with general-use electronic equipment or devices (such as audio visual equipment, office-automation equipment, communication devices, electronic appliances and amusement devices). The Products specified in this document are not designed to be radiation tolerant. While ROHM always makes efforts to enhance the quality and reliability of its Products, a Product may fail or malfunction for a variety of reasons. Please be sure to implement in your equipment using the Products safety measures to guard against the possibility of physical injury, fire or any other damage caused in the event of the failure of any Product, such as derating, redundancy, fire control and fail-safe designs. ROHM shall bear no responsibility whatsoever for your use of any Product outside of the prescribed scope or not in accordance with the instruction manual. The Products are not designed or manufactured to be used with any equipment, device or system which requires an extremely high level of reliability the failure or malfunction of which may result in a direct threat to human life or create a risk of human injury (such as a medical instrument, transportation equipment, aerospace machinery, nuclear-reactor controller, fuel-controller or other safety device). ROHM shall bear no responsibility in any way for use of any of the Products for the above special purposes. If a Product is intended to be used for any such special purpose, please contact a ROHM sales representative before purchasing. If you intend to export or ship overseas any Product or technology specified herein that may be controlled under the Foreign Exchange and the Foreign Trade Law, you will be required to obtain a license or permit under the Law. Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com (c) 2009 ROHM Co., Ltd. All rights reserved. R0039A |
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