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TLH.51..
Vishay Semiconductors
High Intensity LED, o 5 mm Untinted Non-Diffused
Color Red Yellow Green Pure green TLHK51.. TLHE51.. TLHG51.. TLHP51.. Type Technology AlInGaP on GaAs AlInGaP on GaAs GaP on GaP GaP on GaP Angle of Half Intensity o 9 9 9 9
Description
The TLH.51.. series is a clear, non diffused 5 mm LED for outdoor application. These clear lamps utilize the highly developed technologies like AlInGaP and GaP. The lens and the viewing angle is optimized to achieve best performance of light output and visibility. The subtypes TLH.5101 and TLH.5102 with their very stable light output are especially recommended for applications where a homogeneous appearance is required.
94 8631
Features
D Untinted non diffused lens D Choice of four colors D TLH.5101 and TLH.5102 with reduced
light matching factor
Applications
Outdoor LED panels Central high mounted stop lights (CHMSL) for motor vehicles Instrumentation and front panel indicators Light guide design Traffic signals
D TLH.5100 for cost effective design D Medium viewing angle
Absolute Maximum Ratings
Tamb = 25_C, unless otherwise specified TLHK51.. ,TLHE51.. ,TLHG51.. ,TLHP51.. , Parameter Reverse voltage DC forward current Surge forward current Power dissipation Junction temperature Operating temperature range Storage temperature range Soldering temperature Thermal resistance junction/ambient Test Conditions Tamb 65C tp 10 ms Tamb 65C Symbol VR IF IFSM PV Tj Tamb Tstg Tsd RthJA Value 6 30 1 100 100 -40 to +100 -55 to +100 260 350 Unit V mA A mW C C C C K/W
t 5 s, 2 mm from body
Document Number 83010 Rev. A5, 04-Oct-00
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TLH.51..
Vishay Semiconductors Optical and Electrical Characteristics
Tamb = 25_C, unless otherwise specified Red (TLHK51.. ) Parameter Luminous intensity 1) y Test Conditions IF = 20 mA Type TLHK5100 TLHK5101 TLHK5102 Symbol IV IV IV ld lp VF VR Cj Min 320 320 320 626 Typ Max 640 860 639 Unit mcd mcd mcd nm nm deg V V pF
Dominant wavelength IF = 10 mA Peak wavelength IF = 10 mA Angle of half intensity IF = 10 mA Forward voltage IF = 20 mA Reverse voltage IR = 10 mA Junction capacitance VR = 0, f = 1 MHz 1) in one Packing Unit I Min./ I Max. 0.5 V V
630 643 9 1.9 15
2.6
5
v
Yellow (TLHE51.. ) Parameter Luminous intensity 1) y Test Conditions IF = 20 mA Type TLHE5100 TLHE5101 TLHE5102 Symbol IV IV IV ld lp VF VR Cj Min 750 750 750 581 Typ Max 1500 2000 594 Unit mcd mcd mcd nm nm deg V V pF
Dominant wavelength IF = 10 mA Peak wavelength IF = 10 mA Angle of half intensity IF = 10 mA Forward voltage IF = 20 mA Reverse voltage IR = 10 mA Junction capacitance VR = 0, f = 1 MHz 1) in one Packing Unit I Min./ I Max. 0.5 V V
588 590 9 2 15
2.6
5
v
Green (TLHG51.. ) Parameter Luminous intensity 1) y Test Conditions IF = 20 mA Type Symbol TLHG5100 IV TLHG5101 IV TLHG5102 IV ld lp VF VR Cj Min 240 240 240 562 Typ Max 480 640 575 565 9 2.4 15 50 Unit mcd mcd mcd nm nm deg V V pF
Dominant wavelength IF = 10 mA Peak wavelength IF = 10 mA Angle of half intensity IF = 10 mA Forward voltage IF = 20 mA Reverse voltage IR = 10 mA Junction capacitance VR = 0, f = 1 MHz 1) in one Packing Unit I Min./ I Max. 0.5 V V
3
6
v
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Document Number 83010 Rev. A5, 04-Oct-00
TLH.51..
Vishay Semiconductors
Pure green (TLHP51.. ) Parameter Luminous intensity 1) y Test Conditions IF = 20 mA Type TLHP5100 TLHP5101 TLHP5102 Symbol IV IV IV ld lp VF VR Cj Min 66 66 66 555 Typ Max 132 200 565 555 9 2.4 15 50 Unit mcd mcd mcd nm nm deg V V pF
Dominant wavelength IF = 10 mA Peak wavelength IF = 10 mA Angle of half intensity IF = 10 mA Forward voltage IF = 20 mA Reverse voltage IR = 10 mA Junction capacitance VR = 0, f = 1 MHz 1) in one Packing Unit I Min./ I Max. 0.5 V V
3
6
v
Typical Characteristics (Tamb = 25_C, unless otherwise specified)
125 PV - Power Dissipation ( mW ) 10000 Tamb 100 IF - Forward Current ( mA ) 1000 tp/T=0.01 0.02 0.05 0.1 100 1 10 0.5 0.2
v65C
75
50 25 0 0 20 40 60 80 100
1 0.01
95 10025
0.1
1
10
100
95 10918
Tamb - Ambient Temperature ( C )
tp - Pulse Length ( ms ) 0 10 20
Figure 1. Power Dissipation vs. Ambient Temperature
60 IF - Forward Current ( mA ) S rel - Relative Sensitivity 50 40 30 20 10 0 0
95 10046
Figure 3. Forward Current vs. Pulse Length
30
40 1.0 0.9 0.8 0.7 50 60 70 80
20
40
60
80
100
94 8351
0.6
0.4
0.2
0
0.2
0.4
0.6
Tamb - Ambient Temperature ( C )
Figure 2. Forward Current vs. Ambient Temperature
Figure 4. Rel. Luminous Intensity vs. Angular Displacement
Document Number 83010 Rev. A5, 04-Oct-00
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TLH.51..
Vishay Semiconductors
100 I Vrel- Relative Luminous Intensity Red I F - Forward Current ( mA ) 10.00 Red
1.00
10
0.10
1 1
95 10878r
1.5
2.0
2.5
3.0
0.01 1
96 11588r
10 IF - Forward Current ( mA )
100
VF - Forward Voltage ( V )
Figure 5. Forward Current vs. Forward Voltage
1.6 I Vrel- Relative Luminous Intensity
Figure 8. Relative Luminous Intensity vs. Forward Current
1.2 1.1 Red IF = 10 mA 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 600 610 620 630 640 650 660 670 680 690 700
l - Wavelength ( nm )
1.2 1.0 0.8 0.6 0.4 0.2 0 0 10 20 30 40 50 60 70 80 90 100 Tamb - Ambient Temperature ( C )
95 10880r
96 12075r
Figure 6. Rel. Luminous Intensity vs. Ambient Temperature
2.0 IVrel- Specific Luminous Intensity 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 1
96 11589r
Figure 9. Relative Luminous Intensity vs. Wavelength
100
Red I F - Forward Current ( mA )
I Vrel- Relative Luminous Intensity
1.4
Red
IF = 10 mA
Yellow
10
10 IF - Forward Current ( mA )
100
95 10878y
1 1
1.5
2.0
2.5
3.0
VF - Forward Voltage ( V )
Figure 7. Specific Luminous Intensity vs. Forward Current
Figure 10. Forward Current vs. Forward Voltage
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Document Number 83010 Rev. A5, 04-Oct-00
TLH.51..
Vishay Semiconductors
1.6 I Vrel- Relative Luminous Intensity I Vrel- Relative Luminous Intensity 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0
95 10880y
Yellow
IF = 10 mA
10 20 30 40 50 60 70 80 90 100 Tamb - Ambient Temperature ( C )
1.2 1.1 Yellow IF = 10 mA 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 550 560 570 580 590 600 610 620 630 640 650
l - Wavelength ( nm )
95 10881y
Figure 11. Rel. Luminous Intensity vs. Ambient Temperature
2.0 IVrel- Specific Luminous Intensity 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 1
96 11589y
Figure 14. Relative Luminous Intensity vs. Wavelength
1000
Yellow IF - Forward Current ( mA ) 100
Green
10 tp/T=0.001 tp=10ms
1
0.1 10 IF - Forward Current ( mA ) 100
95 10034
0
2
4
6
8
10
VF - Forward Voltage ( V )
Figure 12. Specific Luminous Intensity vs. Forward Current
Figure 15. Rel. Luminous Intensity vs. Ambient Temperature
1.6 Iv rel - Relative Luminous Intensity
10.00 I Vrel- Relative Luminous Intensity Yellow
Green 1.2
1.00
0.8
0.10
0.4 IF=10mA 0 20 40 60 80 100
0 0.01 1 10 IF - Forward Current ( mA ) 100
95 10035
Tamb - Ambient Temperature ( C )
96 11588y
Figure 13. Relative Luminous Intensity vs. Forward Current
Figure 16. Rel. Luminous Intensity vs. Ambient Temperature
Document Number 83010 Rev. A5, 04-Oct-00
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TLH.51..
Vishay Semiconductors
2.4 Iv rel- Specific Luminous Intensity Green IF - Forward Current ( mA ) 2.0 1.6 1.2 0.8 0.4 0 10
95 10263
100 Pure Green
10
1
0.1 20 50 100 200 500
95 9988
0
1
2
3
4
5
IF - Forward Current ( mA )
VF - Forward Voltage ( V )
Figure 17. Specific Luminous Intensity vs. Forward Current
10 Iv rel - Relative Luminous Intensity
Figure 20. Forward Current vs. Forward Voltage
2.0 Iv rel - Relative Luminous Intensity
Green
Pure Green 1.6
1
1.2
0.1
0.8 0.4 0 0 20 40 60 80 100
0.01 1
95 10037
10 IF - Forward Current ( mA )
100
95 9991
Figure 18. Relative Luminous Intensity vs. Forward Current
Tamb - Ambient Temperature ( C )
Figure 21. Rel. Luminous Intensity vs. Ambient Temperature
2.4 Iv rel- Specific Luminous Intensity
1.2 Iv rel - Relative Luminous Intensity Green 1.0 0.8 0.6 0.4 0.2 0 520
95 10038
Pure Green 2.0 1.6 1.2 0.8 0.4 0
540
560
580
600
620
95 10261
10
20
50
100
200
500
l - Wavelength ( nm )
IF - Forward Current ( mA )
Figure 19. Relative Luminous Intensity vs. Wavelength
Figure 22. Specific Luminous Intensity vs. Forward Current
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Document Number 83010 Rev. A5, 04-Oct-00
TLH.51..
Vishay Semiconductors
10 Iv rel - Relative Luminous Intensity Pure Green Iv rel - Relative Luminous Intensity 1.2 Pure Green 1.0 0.8 0.6 0.4 0.2 0 500
95 10325
1
0.1
0.01 1
95 9998
10 IF - Forward Current ( mA )
100
520
540
560
580
600
l - Wavelength ( nm )
Figure 23. Relative Luminous Intensity vs. Forward Current
Figure 24. Relative Luminous Intensity vs. Wavelength
Dimensions in mm
96 12121
Document Number 83010 Rev. A5, 04-Oct-00
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TLH.51..
Vishay Semiconductors Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs ). The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA ) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
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Document Number 83010 Rev. A5, 04-Oct-00

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