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| RLD78NZC3 Laser diodes AlGaAs laser diodes RLD78NZC3 The RLD78NZC3 is one of the world's first mass-produced laser diodes that is manufactured by molecular beam epitaxy. The characteristics of this laser diode are suitable for high-speed laser printers. 0.40.1 1.0Min. !Applications Laser printers High-speed laser printers !External dimensions (Units : mm) 902 Equivalent circuit diagram (3) 4.4+0 N t y p e L.D. (1) 1.20.1 6.50.5 2.3 !Features 1) One-third dispersion compared with conventional laser diodes. 2) High-precision, compact package. 3) Low droop. 4) Can be driven by single power supply (N type). 3.6 1.00.1 P.D. (2) Optical distance 1.35 5.6 +0 -0.025 Glass window Chip 3-0.45 (3) (2) (1) !Absolute maximum ratings (Tc=25C) Parameter Output Reverse voltage Symbol PO Limits 10 2 30 -10~+60 -40~+85 Unit mW V V C C Laser PIN photodiode VR VR (PIN) Topr Tstg Operating temperature Storage temperature 1/3 RLD78NZC3 Laser diodes !Electrical and optical characteristics (Tc=25C) Parameter Threshold current Operating current Operating voltage Differential efficiency Monitor current Parallel divergence angle Perpendicular divergence angle Parallel deviation angle Perpendicular deviation angle Emission point accuracy Peak emission wavelength Droop Symbol Ith Iop Vop Im // Min. 10 20 - 0.2 0.2 8 25 - - - 770 - Typ. 20 40 1.9 0.4 0.4 11 30 - - - 785 5 Max. 45 65 2.3 0.6 1.0 15 38 2 3 80 795 10 Unit mA mA V mW/mA mA deg deg deg deg m nm % PO=6mW PO=6mW - PO=6mW PO=6mW PO=6mW 4mW I(6mW) - I(2mW) PO=6mW Conditions - // X Y Z P // and are defined as the angle within which the intensity is 50% of the peak value. !Electrical and optical characteristic curves 10 20C 30C 40C 50C 60C 8 THRESHOLD CURRENT : Ith (mA) OPTICAL POWER : PO (mW) 100 90 80 70 60 50 40 30 OPTICAL POWER Tc=25C PO=10mW PO=8mW PO=6mW PO=4mW PO=2mW 6 4 20 2 0 10 20 30 40 50 60 70 80 OPERATING CURRENT : IF (mA) 10 -20 -10 0 10 20 30 40 50 60 70 -40 0 ANGLE (deg) 40 PACKAGE TEMPERATURE : TC (C) Fig.1 Optical output vs.operating current Fig.2 Dependence of threshold current on temperature 10 Fig.3 Parallel far field pattern Tc=25C RELATIVE OPTICAL INTENSITY TC=25C PO=10mW PO=10mW OPTICAL POWER OPTICAL INTENSITY : PO (mW) 790 8 PO=8mW PO=6mW PO=4mW PO=2mW PO=6mW 6 PO=4mW 4 PO=2mW 2 0 0.2 0.4 0.6 0.8 1.0 MONITOR CURRENT : Im (mA) -40 0 ANGLE (deg) 40 770 775 780 785 WAVELENGTH : (nm) Fig.4 Perpendicular far field pattern Fig.5 Dependence of emission spectrum on optical output Fig.6 Monitor current vs.optical output 2/3 RLD78NZC3 Laser diodes 790 PO=6mW DRP=30% 50 80 60 WAVELENGTH : (nm) TC=60C TC=50C 785 DROOP (%) TEMPERATURE (C) 60 40 TC=40C TC=30C TC=25C 40 DRP=20% DRP=10% 780 30 20 25 775 20 40 PACKAGE TEMPERATURE : TC (C) 60 0 2 4 6 8 10 0 2 4 6 8 10 OPTICAL POWER (mW) OPTICAL POWER (mW) Fig.7 Dependence of wavelength on temperature Fig. 8 Dependence of droop on output and temperature Fig. 9 Temperature vs. output guidelines for various droop percentages 3/3 |
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