semelab plc. telephone +44(0)1455 556565. fax +44(0)1455 552612. e-mail: sales@semelab.co.uk website: http://www.semelab.co.uk semelab plc reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by semelab is believedto be both accurate and reliable at the time of going to press. however semelab assumes no responsibility for any errors or omissions discovered in its use. semelab encourages customers to verify that datasheets are current before placing orders. D5012UK document number 6711 issue 1 p d pow er dissipation bv dss dr ain ? source breakdo wn v oltage * bv gss gate ? source breakdo wn v oltage * i d(sat) dr ain current * t stg stor age t emper ature t j maxim um oper ating j unction t emper ature 290w 125v 20v 9a ?65 to 150c 200c mechanical d ata gold met allised mul ti-purpose silicon dmos rf fet 100w ? 50v ? 500mhz push?pull fea tures ? simplified amplifier design ? suit able for br o ad b and applica tions ? lo w c rss ? simple bias circuits ? lo w noise ? high gain ? 10 db minimum absolute maximum ra tings (t case = 25c unless otherwise stated) applica tions ? hf/vhf/uhf communica tions from 1 mhz to 500 mhz met al ga te rf silicon fet t etrafet * p er side a m k j i h g ( t y p ) f e d c b ( 4 p l s ) n 1 5 4 3 2 dh pin 1 source (common) pin 2 drain 1 pin 3 drain 2 pin 4 gate 2 pin 5 gate 1 dim mm tol. inches tol. a 13.97 0.26 0.550 0.010 b 5.72 0.13 0.225 0.005 c 45 5 45 5 d 9.78 0.13 0.385 0.005 e 1.65r 0.13 0.065r 0.005 f 23.75 0.13 0.935 0.005 g 1.52r 0.13 0.060r 0.005 h 30.48 0.13 1.200 0.005 i 19.17 0.26 0.755 0.010 j 0.13 0.02 0.005 0.001 k 2.54 0.13 0.100 0.005 m 1.52 0.13 0.060 0.005 n 5.08 0.50 0.200 0.020
semelab plc. telephone +44(0)1455 556565. fax +44(0)1455 552612. e-mail: sales@semelab.co.uk website: http://www.semelab.co.uk semelab plc reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by semelab is believedto be both accurate and reliable at the time of going to press. however semelab assumes no responsibility for any errors or omissions discovered in its use. semelab encourages customers to verify that datasheets are current before placing orders. D5012UK document number 6711 issue 1 p arameter t est conditions min. t yp. max. unit 125 31 1 7 2.4 1050 20:1 180 75 4.5 v gs = 0 i d = 100ma v ds = 50v v gs = 0 v gs = 20v v ds = 0 i d = 10ma v ds = v gs v ds = 10v i d = 1.5a p o = 100w v ds = 50v i dq = 0.6a f = 500mhz v ds = 50v v gs = ?5v f = 1mhz v ds = 50v v gs = 0 f = 1mhz v ds = 50v v gs = 0 f = 1mhz v ma a vs db % ? pfpf pf electrical chara cteristics (t case = 25c unless otherwise stated) drain?source bv dss breakdown voltagezero gate voltage i dss drain current i gss gate leakage current v gs(th) gate threshold voltage* g fs forward transconductance* g ps common source power gain drain efficiency vswr load mismatch tolerance c iss input capacitance c oss output capacitance c rss reverse transfer capacitance hazardous ma terial w arning the ceramic portion of the device between leads and metal flange is beryllium oxide. beryllium oxide dust is highly toxic and care must be taken during handling and mounting to avoid damage to this area. these devices must never be thrown away with general industrial or domestic waste. r thj?case thermal resistance junction ? case max. 0.6c / w thermal d ata * pulse test: pulse duration = 300 s , duty cycle 2% tot al device per side per side
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