?200 9 fairchild semiconductor corporation 1 www.fairchildsemi.com fdt3n40 rev. a fdt3n40 400v n-channel mosfet november 2009 unifet tm fdt3n40 400v n-channel mosfet features ? 2a, 400v, r ds(on) = 3.4 ? @v gs = 10 v ? low gate charge ( typical 4.5 nc) ?low c rss ( typical 3.7 pf) ?fast switching ? 100% avalanche tested ? improved dv/dt capability description these n-channel enhancement mode power field effect transistors are produced using fairchild?s proprietary, planar stripe, dmos technology. this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. these devices are well suited for high efficient switched mode power supplies and active power factor correction. absolute maximum ratings thermal characteristics sot-223 fdt series g d s symbol parameter fdt3n40 unit v dss drain-source voltage 400 v i d drain current - continuous (t c = 25 ? c) - continuous (t c = 100 ? c) 2.0 * 1.2 * a a i dm drain current - pulsed (note 1) 8.0 * a v gss gate-source voltage ? 30 v e as single pulsed avalanche energy (note 2) 46 mj i ar avalanche current (note 1) 2a e ar repetitive avalanche energy (note 1) 0.2 mj dv/dt peak diode recovery dv/dt (note 3) 4.5 v/ns p d power dissipation (t c = 25 ? c) - derate above 25 ? c 2 0.02 w w/ ? c t j, t stg operating and storage temperature range -55 to +150 ? c t l maximum lead temperature for soldering purpose, 1/8? from case for 5 seconds 300 ? c symbol parameter typ max unit r ? ja * thermal resistance, case-to-sink typ. -- 60 ? c/w * drain current limited by maximum junction temperature * surface mounted on jesd51-3 board, t<0.1sec.
2 www.fairchildsemi.com fdt3n40 rev. a fdt3n40 400v n-channel mosfet package marking and ordering information electrical characteristics t c = 25c unless otherwise noted notes: 1. repetitive rating: pulse width limit ed by maximum junction temperature 2. l = 10mh, i as = 2a, v dd = 50v, r g = 25 : , starting t j = 25 q c 3. i sd d 2a, di/dt d 200a/ p s, v dd d bv dss , starting t j = 25 q c 4. pulse test: pulse width d 300 p s, duty cycle d 2% 5. essentially independent of operating temperature typical characteristics device marking device package reel size tape width quantity fdt3n40 FDT3N40TF sot-223 330mm 12mm 4000 symbol parameter conditions min. typ. max units off characteristics bv dss drain-source breakdown voltage v gs = 0v, i d = 250 p a 400 -- -- v ' bv dss / ' t j breakdown voltage temperature coefficient i d = 250 p a, referenced to 25 q c--0.4--v/ q c i dss zero gate voltage drain current v ds = 400v, v gs = 0v v ds = 320v, t c = 125 q c -- -- -- -- 1 10 p a p a i gssf gate-body leakage current, forward v gs = 30v, v ds = 0v -- -- 100 na i gssr gate-body leakage current, reverse v gs = -30v, v ds = 0v -- -- -100 na on characteristics v gs(th) gate threshold voltage v ds = v gs , i d = 250 p a3.0--5.0v r ds(on) static drain-source on-resistance v gs = 10v, i d = 1a -- 2.8 3.4 : g fs forward transconductance v ds = 40v, i d = 1a (note 4) -- 2 -- s dynamic characteristics c iss input capacitance v ds = 25v, v gs = 0v, f = 1.0mhz -- 173 225 pf c oss output capacitance -- 30 40 pf c rss reverse transfer capacitance -- 3.7 6 pf switching characteristics t d(on) turn-on delay time v dd = 200v, i d = 2a r g = 25 : (note 4, 5) -- 10 30 ns t r turn-on rise time -- 30 70 ns t d(off) turn-off delay time -- 10 30 ns t f turn-off fall time -- 25 60 ns q g total gate charge v ds = 320v, i d = 2a v gs = 10v (note 4, 5) -- 4.5 6 nc q gs gate-source charge -- 1.2 -- nc q gd gate-drain charge -- 2 -- nc drain-source diode characteristics and maximum ratings i s maximum continuous drain-source diode forward current -- -- 2 a i sm maximum pulsed drain-source diode forward current -- -- 8 a v sd drain-source diode forward voltage v gs = 0v, i s = 2a -- -- 1.4 v t rr reverse recovery time v gs = 0v, i s = 2a di f /dt =100a/ p s (note 4) -- 210 -- ns q rr reverse recovery charge -- 0.75 -- p c
3 www.fairchildsemi.com fdt3n40 rev. a fdt3n40 400v n-channel mosfet typical performance characteristics figure 1. on-region characteristics figure 2. transfer characteristics figure 3. on-resistance variation vs. figure 4. body diode forward voltage drain current and gate voltage v ariation vs. s ource current and temperatue figure 5. capacitance characteristics figure 6. gate charge characteristics 45678910 10 0 10 1 150 o c 25 o c -55 o c * notes : 1. v ds = 40v 2. 250 p s pulse test i d , drain current [a] v gs , gate-source voltage [v] 10 -1 10 0 10 1 10 -2 10 -1 10 0 10 1 v gs top : 15.0 v 10.0 v 8.0 v 7.0 v 6.5 v 6.0 v bottom : 5.5 v * notes : 1. 250 p s pulse test 2. t c = 25 o c i d , drain current [a] v ds , drain-source voltage [v] 0123456 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 v gs = 20v v gs = 10v * note : t j = 25 o c r ds(on) [ : ], drain-source on-resistance i d , drain current [a] 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 10 -1 10 0 10 1 150 o c * notes : 1. v gs = 0v 2. 250 p s pulse test 25 o c i dr , reverse drain current [a] v sd , source-drain voltage [v] 10 -1 10 0 10 1 0 50 100 150 200 250 300 350 c iss = c gs + c gd (c ds = shorted) c oss = c ds + c gd c rss = c gd * note : 1. v gs = 0 v 2. f = 1 mhz c rss c oss c iss capacitances [pf] v ds , drain-source voltage [v] 012345 0 2 4 6 8 10 12 v ds = 200v v ds = 80v v ds = 320v * note : i d = 2a v gs , gate-source voltage [v] q g , total gate charge [nc]
4 www.fairchildsemi.com fdt3n40 rev. a fdt3n40 400v n-channel mosfet typical performance characteristics (continued) figure 7. breakdown voltage variatio n figure 8. on-resistance variation vs. temperature vs. temperature figure 9. maximum safe operating area figure 10. maximum drain current vs. case temperature figure 11. transient thermal response curve -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 * notes : 1. v gs = 10 v 2. i d = 1 a r ds(on) , (normalized) drain-source on-resistance t j , junction temperature [ o c] -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 * notes : 1. v gs = 0 v 2. i d = 250 p a bv dss , (normalized) drain-source breakdown voltage t j , junction temperature [ o c] 10 0 10 1 10 2 10 -2 10 -1 10 0 10 1 100 ms 1 ms 10 p s dc 10 ms 100 p s operation in this area is limited by r ds(on) * notes : 1. t c = 25 o c 2. t j = 150 o c 3. single pulse i d , drain current [a] v ds , drain-source voltage [v] 25 50 75 100 125 150 0.0 0.5 1.0 1.5 2.0 2.5 i d , drain current [a] t c , case temperature [ o c] 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 10 -2 10 -1 10 0 10 1 10 2 * notes : 1. z t ja (t) = 60 o c/w max. 2. d uty factor, d =t 1 /t 2 3. t jm - t c = p dm * z t jc (t) single pulse d=0.5 0.02 0.2 0.05 0.1 0.01 z t ja (t), thermal response t 1 , square w ave pulse duration [sec] t 1 p dm t 2
5 www.fairchildsemi.com fdt3n40 rev. a fdt3n40 400v n-channel mosfet gate charge test circuit & waveform resistive switching test circuit & waveforms unclamped inductive switching test circuit & waveforms
6 www.fairchildsemi.com fdt3n40 rev. a fdt3n40 400v n-channel mosfet peak diode recovery dv/dt test circuit & waveforms
7 www.fairchildsemi.com fdt3n40 rev. a fdt3n40 400v n-channel mosfet mechanical dimensions sot-223
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