mitsubishi semiconductor MGFK44A4045 14.0-14.5ghz band 25w internally matched gaas fet description the MGFK44A4045 is an internally impedance matched gaas power fet especially designed for use in 14.0-14.5 ghz band amplifiers. the hermetically sealed metal-ceramic package guarantees high reliability. features ? internally impedance matched ? high output power p1db = 44.0dbm(typ.) @f=14.0-14.5ghz ? high linear power gain glp = 6.0db(typ) @f=14.0-14.5ghz application ? for use in 14.0-14.5ghz band amplifiers quality grade ? ig recommended bias conditions vds = 10 (v) id(rfoff) =6.0 (a) rg=25 (ohm) absolute maximum ratings (ta=25deg.c) symbol parameter ratings unit vgdo gate to drain voltage -15 v < keep safety first in your circuit designs! > vgso gate to source voltage -10 v mitsubishi electric corporation puts the maximum effort into id drain current 20 a making semiconductor products better and more reliable, igr reverse gate current -72 ma but there is always the possibility that trouble may occur igf forward gate current 144 ma with them.trouble with semiconductors may lead to personal pt *1 total power dissipation 100 w injury, fire or property damage. remember to give due tch channel temperature 175 deg.c consideration to safety when making your circuit designs, tstg storage temperature -65 / +175 deg.c with appropriate measures such as (1)placement of *1 : tc=25deg.c substitutive, auxiliary circuits, (2)use of non-flammablematerial or (3)prevention against any malfunction or mishap. electrical characteristics (ta=25deg.c) symbol parameter test conditions limits unit min. typ. max. idss saturated drain current vds=3v,vg=0v -- 16.0 -- a gm transconductance vds=0v,id=6.0a -- 6 -- s vgs(off) gate to source cut-off voltage vds=3v,id=80ma -1.0 -1.5 -4.0 v p1db output power at 1db gain compression 43 44 -- dbm glp linear power gain vds=10v, id(rf off)=6.0a, f=14.0 - 14.5ghz 5.0 6.0 -- db p.a.e. power added efficiency -- 17 -- % rth (ch-c) thermal resistance channel to case -- 1.2 1.5 deg.c/w jul-04 mitsubishi electric 24 +/- 0.3 (1) 20.4 +/- 0.2 16.7 gf-38 4.3 +/- 0.4 1.4 2min outline drawing 17.4 +/- 0.2 8.0 +/- 0.2 r 1.2 2min 0.1 +/- 0.05 2.4 +/- 0.2 (1) gate (2) source (flange) (3) drain (3) (2) unit : millimeters 0.6 +/- 0.15 (1/4)
MGFK44A4045 output power & power added efficiency & gain vs. input power test conditions : vds(rfoff)=10v,ids(rfoff)=6.0a,rg=25ohm mitsubishi electric corporation july'04 freqency=14.0ghz -10 -5 0 5 10 15 20 25 30 35 40 45 22 27 32 37 42 pin(dbm) pout(dbm), glp(db), pae(%), id(a), ig(ma) pout gain id rf ig rf pae freqency=14.2ghz -10 -5 0 5 10 15 20 25 30 35 40 45 22 27 32 37 42 pin(dbm) pout(dbm), glp(db), pae(%), id(a), ig(ma) pout gain id rf ig rf pae freqency=14.5ghz -10 -5 0 5 10 15 20 25 30 35 40 45 22 27 32 37 42 pin(dbm) pout(dbm), glp(db), pae(%), id(a), ig(ma) pout gain id rf ig rf pae (2/4)
MGFK44A4045 im3 vs. output power test conditions vds(rfoff)=10v,ids(rfoff)=6.0a,rg=25ohm 2-tone test mitsubishi electric corporation july'04 freqency=14.00ghz,14.01ghz 20 25 30 35 40 20 25 30 35 pin(dbm)(s.c.l) pout(dbm)(s.c.l) -50 -40 -30 -20 -10 im3(dbc) pout im3 freqency=14.20ghz14.21ghz 20 25 30 35 40 20 25 30 35 pin(dbm)(s.c.l) pout(dbm)(s.c.l) -50 -40 -30 -20 -10 im3(dbc) pout im3 freqency=14.5ghz,14.51 20 25 30 35 40 20 25 30 35 pin(dbm)(s.c.l) pout(dbm)(s.c.l) -50 -40 -30 -20 -10 im3(dbc) pout im3 (3/4)
mitsubishi semiconductor MGFK44A4045 14.0-14.5ghz band 25w internally matched gaas fet july'04 mitsubishielectric (4/4)
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