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| inchange semiconductor product specification silicon npn power transistors 2SD5075T description ? with to-220c package ? high breakdown voltage ? high speed switching applications ? color tv horizontal output applications pinning pin description 1 base 2 collector 3 emitter absolute maximum ratings(ta=25 ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 1500 v v ceo collector-emitter voltage open base 800 v v ebo emitter-base voltage open collector 6 v i c collector current 3.5 a i cm collector current-peak 10 a p c collector power dissipation t c =25 ?? 75 w t j junction temperature 150 ?? t stg storage temperature -55~150 ??
inchange semiconductor product specification 2 silicon npn power transistors 2SD5075T characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v cesat collector-emitter saturation voltage i c =2.5a;i b =0.8a 8.0 v v besat base-emitter saturation voltage i c =2.5a;i b =0.8a 1.5 v i ebo emitter cut-off current v eb =5v; i c =0 1.0 ma i cbo collector cut-off current v cb =800v; i e =0 10 | a h fe dc current gain i c =1.5 a ; v ce =5v 8 f t transition frequency i c =0.5 a ; v ce =10v 3 mhz t f fall time i c =3a;i b1 =0.8a;i b2 =-1.6a v cc =200v;r l =66.7 |? 0.4 | s inchange semiconductor product specification 3 silicon npn power transistors 2SD5075T package outline fig.2 outline dimensions (unindicated tolerance: ? 0.10mm) |
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