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| savantic semiconductor product specification silicon npn power transistors 2SC3856 d escription with to-3pn package complement to type 2sa1492 applications audio and general purpose pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings(ta= ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 200 v v ceo collector-emitter voltage open base 180 v v ebo emitter-base voltage open collector 6 v i c collector current 15 a i b base current 4 a p c collector power dissipation t c =25 130 w t j junction temperature 150 t stg storage temperature -55~150 fig.1 simplified outline (to-3pn) and symbol
savantic semiconductor product specification 2 silicon npn power transistors 2SC3856 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =50ma ;i b =0 180 v v cesat collector-emitter saturation voltage i c =5a ;i b =0.5a 2.0 v i cbo collector cut-off current v cb =200v ;i e =0 100 a i ebo emitter cut-off current v eb =6v; i c =0 100 a h fe dc current gain i c =3a ; v ce =4v 50 180 c ob output capacitance i e =0 ; v cb =10v,f=1mhz 300 pf f t transition frequency i c =0.5a ; v ce =12v 20 mhz switching times t on turn-on time 0.50 s t s storage time 1.80 s t f fall time i c =10a;r l =4 b i b1 =- i b2 =1a v cc =40v 0.60 s h fe classifications o p y 50-100 70-140 90-180 savantic semiconductor product specification 3 silicon npn power transistors 2SC3856 package outline fig.2 outline dimensions (unindicated tolerance: 0.1mm) savantic semiconductor product specification 4 silicon npn power transistors 2SC3856 |
Price & Availability of 2SC3856
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