schottky barrier diode RBQ20NS45A l applications l dimensions (unit : mm) l land size figure (unit : mm) general rectification l features 1)cathode common dual type. lpds 2)low i r. l construction silicon epitaxial planer l structure symbol unit v rm v v r v io a i fsm a tj c tstg c symbol min. typ. max. unit v f - - 0.65 v i f =10a i r - - 0.3 ma v r =45v forward current surge peak (60hz ? 1cyc) (*2) reverse current (*1) 60hz half sin wave, 1/2 io per diode. parameter (*2) 60hz half sin wave, one cycle, non-repetitive at tj=25 c. l electrical characteristics (tj=25 c) forward voltage conditions average rectified forward current (*1) 20 l taping dimensions (unit : mm) reverse voltage (repetitive peak) 45 reverse voltage (dc) 45 parameter limits l absolute maximum ratings (tc=25 ? c) - 40 to +150 storage temperature 150 junction temperature 100 rohm : lpds jeita : to263s manufacture year, week and day bq20ns 45a 1/4 2011.11 - rev.a data sheet www.rohm.com ? 2011 rohm co., ltd. all rights reserved.
RBQ20NS45A 0.01 0.1 1 10 100 0 100 200 300 400 500 600 700 ta=25 c ta=125 c ta= - 25 c ta=75 c ta=150 c 0.01 0.1 1 10 100 1000 10000 100000 0 10 20 30 40 50 ta= - 25 c ta=25 c ta=75 c ta=125 c ta=150 c 1 10 100 1000 10000 0 5 10 15 20 25 30 f=1mhz 500 510 520 530 540 550 ave:538.6mv ta=25 c i f =10a n=30pcs 0 5 10 15 20 25 30 35 40 45 50 ta=25 c v r =45v n=30pcs ave:27.8 m a 1000 1050 1100 1150 1200 1250 1300 ave:1140.8pf ta=25 c f=1mhz v r =0v n=10pcs forward voltage v f (mv) v f - i f characteristics forward current:i f (a) reverse voltage v r (v) v r - i r characteristics reverse current:i r ( m a) capacitance between terminals:ct(pf) reverse voltage:v r (v) v r - ct characteristics v f dispersion map forward voltage:v f ( m v) capacitance between terminals:ct(pf) ct dispersion map reverse current:i r ( m a) i r dispersion map 2/4 2011.11 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
RBQ20NS45A 0 50 100 150 200 250 300 350 400 450 500 8.3ms 1cyc i fsm ave240a 0 5 10 15 20 25 30 ave:14.6ns ta=25 c i f =0.5a i r =1a irr=0.25*i r n=10pcs 0 50 100 150 200 250 300 350 400 450 500 1 10 100 0 50 100 150 200 250 300 350 400 450 500 1 10 100 t i fsm 0.01 0.1 1 10 100 1000 0.001 0.01 0.1 1 10 100 1000 rth(j - a) rth(j - c) i fsm disresion map peak surge forward current:i fsm (a) trr dispersion map reverse recovery time:trr(ns) peak surge forward current:i fsm (a) number of cycles i fsm - cycle characteristics 8.3ms i fsm 1cyc 8.3ms peak surge forward current:i fsm (a) time:t(ms) i fsm - t characteristics time:t(s) rth - t characteristics transient thermal impedance:rth ( c /w) forward power dissipation:pf(w) average rectified forward current io(a) io - pf characteristics 0 5 10 15 20 25 0 10 20 30 40 dc d=1/2 sin( q 180) 3/4 2011.11 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
RBQ20NS45A 0 5 10 15 20 25 30 35 40 45 50 0 25 50 75 100 125 150 sin( q 180) dc d=1/2 0 0.5 1 1.5 2 2.5 3 3.5 4 0 10 20 30 40 50 sin( q 180) dc d=1/2 0 5 10 15 20 25 30 35 40 45 50 0 25 50 75 100 125 150 sin( q 180) dc d=1/2 0 5 10 15 20 25 30 ave:12.4kv no break at 30kv c=100pf r=1.5k w c=200pf r=0 w reverse power dissipation:p r (w) reverse voltage:v r (v) v r - p r characteristics ambient temperature:ta( c ) derating curve(io - ta) average rectified forward current:io(a) average rectified forward current:io(a) case temperature:tc( c ) derating curve(io - tc) electrostatic discharge test esd(kv) esd dispersion map v r io t tj=150 c d=t/t t v r =20v 0a 0v v r io t tj=150 c d=t/t v r =20v 0a 0v t 4/4 2011.11 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
r 1 120 a ww w .rohm.com ? 20 1 1 rohm co., ltd. all rights reserved. notice rohm customer support system http://ww w . r ohm.com/contact/ thank you for your accessing to rohm p r oduct informations. mo r e detail p r oduct informations and catalogs a r e available, please contact us. notes
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