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1/37 ? semiconductor MSM64P164 ? semiconductor MSM64P164 4-bit microcontroller with built-in rc oscillation type a/d converter and lcd driver general description the MSM64P164 is a one-time-programmable rom-version product, which has one-time prom (otp) as internal program memory. on the other hand, the msm64164c is a mask rom- version product, which has mask rom as internal program memory. unlike the mask rom-version msm64164c, which has a p-well cmos structure, the MSM64P164 has been fabricated with the n-well cmos-structured eeprom process technology. therefore, the MSM64P164 differs from the msm64164c in the polarity of the power supply for lcd bias generation and 5 v interface, and in the external circuit structure. unlike the mask rom-version product, the MSM64P164 cannot be supplied in the form of a chip. the MSM64P164 is an otp-version product used to evaluate an application program. the MSM64P164 has two operation modes, microcontroller operation mode and prom mode. the microcontroller operation mode is used to operate the MSM64P164 like a mask rom-version product and the prom mode is used to program or read the prom. features ? operating range operating frequencies : 32.768 khz, 400 khz operating voltage : 1.5 v/3.0 v selectable by mask option low supply current operating temperature : 0 to +65 c ? memory space internal program memory : 4064 bytes internal data memory : 256 nibbles ? rc oscillation type a/d converter : 2 channels time dividing 2-channel method counter a : 1/(10 4 8) 1 counter b : 1/2 14 1 ? serial port : synchronous 8-bit transfer external clock/internal clock selectable msb first/lsb first selectable ? lcd driver : 34 outputs; duty ratio switchable by software (1) at 1/4 duty and 1/3 bias : 120 segments (max) (2) at 1/3 duty and 1/3 bias : 93 segments (max) (3) at 1/2 duty and 1/2 bias : 64 segments (max) ? buzzer driver : 1 output (4 output modes selectable) ? capture circuit : 2 channels (256 hz, 128 hz, 64 hz, 32 hz) ? watchdog timer ? i/o port input-output port : 3 ports 4 bits input port : 1 port 4 bits output port : 1 port 4 bits e2e0045-38-96 this version: sep. 1998 previous version: sep. 1995 preliminary
2/37 ? semiconductor MSM64P164 ? interrupt sources external interrupt : 2 sources internal interrupt : 8 sources ? package: 80-pin plastic qfp (qfp80-p-1420-0.80-bk) : (product name : MSM64P164- gs-bk) indicates a code number.
3/37 ? semiconductor MSM64P164 block diagram bsr halt mief tr2 tr0 tr1 c alu ba pcm pcl (4) (4) (4) pch hl xy a11 to a8 a7 to a0 db7 to db0 (8) prom (4064 bytes) bias ram (256 nibbles) ir siop int (8) romr sp timing controller ir deco- der db7 to db0 v dd1 v dd2 v dd3 c1 c2 lcd l0 l1 p2.0 p4.3 v dd p0 p0.0 p0.1 p0.2 int p1.0 p1.1 bd intc wdt bd int tbc int 2clk rstg tst vr osc2 osc1 xt xt reset tst1 tst2 v ssl p2.1 v dd int p1.2 5 p1 p1.3 v ss l33 v dd int p2 p3 p4 p0.3 v dd capr adc in0 cs0 rs0 crt0 rt0 in1 cs1 rs1 rt1 port address port address program data/address v pp
4/37 ? semiconductor MSM64P164 pin configuration (top view) 80-pin plastic qfp note: because pin 32 and pin 67 are internally connected with each other, v dd can be supplied from either pin 32 or pin 67. rt1 41 v dd1 42 v dd 43 v dd2 44 v dd3 45 c1 46 c2 47 l17/a7 48 l18/a8 49 l19/a9 50 l20/a10 51 l21/a11 52 l22 53 l23 54 l24 55 l25 56 l26/p5.0 57 l27/p5.1 58 l28/p5.2 59 l29/p5.3 60 l30/p6.0 61 l31/p6.1 62 l32/p6.2 63 l33/p6.3 64 rs1 40 cs1 39 in1 38 in0 37 cs0 36 rs0 35 crt0 34 rt0 33 v ss 32 v pp 31 bd 30 p4.3 29 p4.2 28 p4.1 27 p4.0 26 p3.3 25 24 23 22 21 20 19 18 17 16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 p3.2 p3.1 p3.0 p2.3 p2.2 p2.1 p2.0 l16/a6 l15/a5 l14/a4 l13/a3 l12/a2 l11/a1 l10/a0 l9/ oe l8/ ce l7/d7 l6/d6 l5/d5 l4/d4 l3/d3 l2/d2 l1/d1 l0/d0 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 osc2 osc1 v dd xt xt reset tst1 tst2 p1.0 p1.1 p1.2 p1.3 p0.0 p0.1 p0.2 p0.3
5/37 ? semiconductor MSM64P164 pin descriptions basic functions function symbol type description 0 v power supply power supply v ss bias output for driving lcd (+1.5 v), or positive power supply at 1.5 v spec. v dd1 bias output for driving lcd (+3.0 v), or positive power supply at 3.0 v spec. v dd2 bias output for driving lcd (+4.5 v). v dd3 positive power supply for i/o port interface v dd positive power supply for writing to prom (+12.5 v) v pp pins for connecting a capacitor for generating lcd driving bias. c1, c2 32.768 khz crystal connection pins xt xt external 400 khz oscillation resistor (r os ) connection pins osc1 osc2 output port (p1.0 : high current output) p1.0 to p1.3 input-output ports p2.0 to p4.3 output pin for the buzzer driver bd lcd driver pins l0 to l25 oscillation i o i o ports o i/o o o lcd driver pins, or output ports by mask option l26/p5.0 to l33/p6.3 o input pin for rc oscillator circuit in0 i input pin for rc oscillator circuit in1 i system reset input pin. setting this pin to "l" level puts this device into a reset state. them, setting this pin to "h" level starts executing an instruction from address 000h. this pin is internally pulled up to v dd . reset i input pins for testing. tst1 i tst2 i test reset input port p0.0 to p0.3 i resistance temperature sensor connection pin rt0 o resistance/capacitance temperature sensor connection pin crt0 o reference resistor connection pin rs0 o reference capacitor connection pin cs0 o resistance temperature sensor connection pin rt1 o reference resistor connection pin rs1 o reference capacitor connection pin cs1 o a/d converter rc oscillation pins for a/d converter (channel 0) (crosc0) rc oscillation pins for a/d converter (channel 1) (crosc1) lcd drivers pin 69 68 66 65 73 to 76 18 to 29 30 1 to 17, 48 to 56 57 to 64 37 38 70 71 72 77 to 80 33 34 35 36 41 40 39 32 42 44 45 43 31 46,47
6/37 ? semiconductor MSM64P164 secondary functions function symbol description external interrupt p0.0 secondary functions of p0.0 to p0.3: level-triggered external interrupt input pins. the change of input signal level causes an interrupt to occur. p0.1 p0.2 p0.3 type p2.0 p2.1 p2.2 p2.3 p3.0 p3.1 p3.2 p3.3 p4.0 p4.1 p4.2 p4.3 p0.0 p0.1 p3.3 p4.0 p4.1 p4.2 p4.3 i i i i o o i/o o secondary functions of p2.0 to p2.3, p3.0 to p3.3, and p4.0 to p4.3: level-triggered external interrupt input pins. the change of input signal level causes an interrupt to occur. secondary functions of p0.0 and p0.1: capture circuit trigger input pins. secondary functions of p3.3: this pin is assigned the data input of a serial port (sin). secondary functions of p4.0: this pin is assigned the data output of a serial port (sout). secondary functions of p4.1: this pin is assigned the ready output of a serial port (spr). secondary functions of p4.2: this pin is assigned the clock i/o of a serial port (sclk). secondary functions of p4.3: this pin is a monitor output (mon) of an rc oscillation clock (oscclk) for an a/d converter and a 400 khz rc oscillation clock for a system clock. capture trigger serial port rc oscillation monitor pin 77 78 79 80 18 19 20 21 22 23 24 25 26 27 28 29 77 78 25 26 27 28 29
7/37 ? semiconductor MSM64P164 prom-related pins function pin description program- ming 32, 67 o 0 v power supply. type 8 9 i/o prom chip enable pin. 10 i/o prom output enable signal. 11 i program address input pins. 12 13 14 15 16 17 48 49 50 51 52 53 i apply a "h" level to this pin. 42 positive power supply pin (+5 v supplied). 44 positive power supply pin (+5 v supplied). 31 prom write power supply (+12.5 v supplied). 70 prom write setting pins: prom mode is set by a "l" level input. 71 i 72 1 i/o pins for writing and reading program data. 2 3 4 5 6 7 symbol v ss l7/d7 l8/ ce l9/ oe l10/a0 l11/a1 l12/a2 l13/a3 l14/a4 l15/a5 l16/a6 l17/a7 l18/a8 l19/a9 l20/a10 l21/a11 l22 v dd1 * v dd2 * v pp reset tst1 tst2 l0/d0 l1/d1 l2/d2 l3/d3 l4/d4 l5/d5 l6/d6 * when in prom mode, supply a 5 v power to both v dd1 and v dd2 .
8/37 ? semiconductor MSM64P164 absolute maximum ratings (1.5 v spec.) recommended operating conditions (1.5 v spec.) parameter power supply voltage 1 symbol condition rating unit v dd1 ta = 25c C0.3 to +2.0 v power supply voltage 2 v dd2 ta = 25c C0.3 to +4.0 v power supply voltage 3 v dd3 ta = 25c C0.3 to +5.5 v power supply voltage 4 v dd ta = 25c C0.3 to +5.5 v input voltage 1 v in1 v dd1 input, ta = 25c C0.3 to v dd1 + 0.3 v input voltage 2 v in2 v dd input, ta = 25c C0.3 to v dd + 0.3 v output voltage 1 v out1 v dd1 output, ta = 25c C0.3 to v dd1 + 0.3 v output voltage 2 v out2 v dd2 output ta = 25c C0.3 to v dd2 + 0.3 v output voltage 3 v out3 v dd3 output, ta = 25c C0.3 to v dd3 + 0.3 v output voltage 4 v out4 v dd output, ta = 25c C0.3 to v dd + 0.3 v storage temperature t stg C55 to +150 c (v ss = 0 v) (v ss = 0 v) operating temperature operating voltage t op 0 to +65 c v dd1 1.4 to 1.7 v v dd v dd1 to 5.25 v external 400 khz rc oscillator resistance r os 250 to 500 k w crystal oscillation frequency f xt 30 to 35 khz parameter symbol condition range unit
9/37 ? semiconductor MSM64P164 electrical characteristics (1.5 v spec.) dc characteristics parameter +100% C50% symbol condition min. typ. max. unit measuring circuit v dd2 voltage v dd2 c a , c b , c 12 = 0.1 m f 2.8 3.0 3.2 v v dd3 voltage v dd3 c a , c b , c 12 = 0.1 m f 4.3 4.5 4.7 v crystal oscillation start voltage v sta oscillation start time: within 5 seconds 1.47 v crystal oscillation hold voltage v hold 1.40 v crystal oscillation stop detection time t stop 0.1 1000 ms internal crystal oscillator capacitance c g 101520pf external crystal oscillator capacitance c gex when external c g used 10 30 pf internal crystal oscillator capacitance c d 101520pf internal 400k rc oscillator capacitance c os 8 12 16 pf 400k rc oscillation frequency f osc external resistor r os = 300 k w v dd1 = 1.40 to 1.7 v 80 220 350 khz por generation voltage v por1 when v dd1 is between v por1 and 1.5 v 0 0.4 v por non-generation voltage v por2 no por when v dd1 is between v por2 and 1.5 v 1.4 1.5 v +100% C50% 1 (v ss = 0 v, v dd1 = v dd = 1.5 v, ta = 0 to +65c unless otherwise specified) notes: 1. "por" denotes power on reset. 2. "t stop " indicates that if the crystal oscillator stops over the value of t stop , the system reset occurs.
10/37 ? semiconductor MSM64P164 dc characteristics (continued) parameter symbol condition min. typ. max. unit measuring circuit supply current 1 i dd1 2.0 5.0 m a supply current 2 i dd2 supply current 3 i dd3 cpu in operating state (400k rc oscillation in operation) r os = 300 k w 90 180 m a supply current 4 i dd4 serial transfer, f sck = 300 khz, cpu in operating state (400k rc oscillation halt) 60 100 m a supply current 5 i dd5 cpu in halt state (400k rc oscillation halt), rc oscillator for a/d converter is in operating state 150 230 m a 1 (v ss = 0 v, v dd1 = v dd = 1.5 v, ta = 0 to +65c unless otherwise specified) cpu in operating state (400k rc oscillation halt) cpu in halt state (400k rc oscillation halt) rt0 = 10 k w rt0 = 2 k w 5080 m a 600 900 m a
11/37 ? semiconductor MSM64P164 dc characteristics (continued) parameter (pin name) symbol condition unit measuring circuit output current 1 (p1.0) i oh1 v oh1 = v dd C 0.5 v min. typ. max. C2.1 C0.7 C0.2 ma i ol1 v ol1 = 0.5 v 1.0 3.0 9.0 ma output current 2 (p1.1 to p1.3) (p2.0 to p2.3) (p3.0 to p3.3) (p4.0 to p4.3) i oh2 C2.1 C0.7 C0.2 ma i ol2 v ol2 = 0.5 v 0.2 0.7 2.1 ma 2 output current 3 (bd) i oh3 v oh3 = v dd1 C 0.7 v C1.8 C0.6 C0.2 ma i ol3 v ol3 = 0.7 v 0.2 0.6 1.8 ma output current 4 (rt0, rt1, rs0, rs1, crt0, cs0, cs1) i oh4 v oh4 = v dd1 C 0.1 v C1.1 C0.6 C0.3 ma i ol4 v ol4 = 0.1 v 0.3 0.6 1.1 ma output current 5 (when l26 to l33 are configured as output ports) i oh5 v oh5 = v dd C 0.5 v C1.5 C0.5 C0.1 ma i ol5 v ol5 = 0.5 v 0.1 0.5 1.5 ma output current 6 (osc2) i oh6 v oh6 = v dd1 C 0.5 v C2.1 C0.7 C0.2 ma i ol6 v ol6 = 0.5 v 0.2 0.7 2.1 ma i oh7 v oh7 = v dd3 C 0.2 v C4.0 m a i omh7 v omh7 = v dd2 + 0.2 v 4.0 m a i omh7s v omh7s = v dd2 C 0.2 v C4.0 m a i oml7 v oml7 = v dd1 + 0.2 v 4.0 m a i oml7s v oml7s = v dd1 C 0.2 v C4.0 m a i ol7 v ol7 = v ss + 0.2 v 4.0 m a output current 7 (l0 to l33) output leakage current (p1.0 to p1.3) (p2.0 to p2.3) (p3.0 to p3.3) (p4.0 to p4.3) (rt0, rt1, rs0, rs1, crt0, cs0, cs1) i ooh v oh = v dd1 0.3 m a i ool v ol = v ss C0.3 m a v oh2 = v dd C 0.5 v (v dd3 level) (v dd2 level) (v dd2 level) (v dd1 level) (v dd1 level) (v ss level) i ol1s v dd = 5 v, v ol1 = 0.5 v 4.0 12 36 ma i ol2s v dd = 5 v, v ol2 = 0.5 v 1.0 3.0 9.0 ma i ol5s v dd = 5 v, v ol5s = 0.5 v 0.2 0.7 2.0 ma (v ss = 0 v, v dd1 = v dd = 1.5 v, v dd2 = 3.0 v, v dd3 = 4.5 v, ta = 0 to +65c unless otherwise specified)
12/37 ? semiconductor MSM64P164 dc characteristics (continued) parameter (pin name) symbol condition unit measuring circuit input current 1 (p0.0 to p0.3) (p2.0 to p2.3) (p3.0 to p3.3) (p4.0 to p4.3) i ih1 v ih1 = v dd (when pulled down) min. typ. max. 5.0 18 60 m a i il1 v il1 = v ss (when pulled up) C60 C18 C5.0 m a 3 i ih1z v ih1 = v dd (in a high impedance state) 0 1.0 m a i il1z v il1 = v ss (in a high impedance state) C1.0 0 m a i ih2 v ih2 = v dd1 (when pulled down) 5.0 18 60 m a i ih2z v ih2 = v dd1 (in a high impedance state) 0 1.0 m a i il2z v il2 = v ss (in a high impedance state) C1.0 0 m a i il3 v il3 = v ss (when pulled up) C60 C22 C6.0 m a i ih3z v ih3 = v dd1 (in a high impedance state) 0 1.0 m a i il3z v il3 = v ss (in a high impedance state) C1.0 0 m a i ih4 v ih4 = v dd1 0 1.0 m a i il4 v il4 = v ss C1.0 C0.3 C0.1 ma v ih1 1.2 1.5 v v il1 0 0.3 v v ih2 1.2 1.5 v v il2 0 0.3 v v ih3 1.2 1.5 v v il3 0 0.3 v input current 2 (in0, in1) input current 3 (osc1) input current 4 ( reset , tst1 , tst2 ) input voltage 1 (p0.0 to p0.3) (p2.0 to p2.3) (p3.0 to p3.3) (p4.0 to p4.3) input voltage 2 (in0, in1, osc1) input voltage 3 ( reset , tst1 , tst2 ) 4 i ih1s v ih1 = v dd = 5 v (when pulled down) 70 250 660 m a i il1s v il1 = v ss , v dd = 5 v (when pulled up) C660 C250 C70 m a v ih1s 4.0 5.0 v v il1s 0 1.0 v v dd = 5 v v dd = 5 v (v ss = 0 v, v dd1 = v dd = 1.5 v, v dd2 = 3.0 v, v dd3 = 4.5 v, ta = 0 to +65c unless otherwise specified)
13/37 ? semiconductor MSM64P164 dc characteristics (continued) parameter (pin name) symbol condition unit measuring circuit hysteresis width (p0.0 to p0.3) (p2.0 to p2.3) (p3.0 to p3.3) (p4.0 to p4.3) d v t1s v dd = 5 v min. typ. max. 0.25 1.0 1.5 v 4 d v t2 0.05 0.1 0.3 v c in 5.0 pf hysteresis width ( reset , tst1 , tst2 ) input pin capacitance (p0.0 to p0.3) (p2.0 to p2.3) (p3.0 to p3.3) (p4.0 to p4.3) 1 d v t1 0.05 0.1 0.3 v (v ss = 0 v, v dd1 = v dd = 1.5 v, v dd2 = 3.0 v, v dd3 = 4.5 v, ta = 0 to +65c unless otherwise specified)
14/37 ? semiconductor MSM64P164 measuring circuit 1 measuring circuit 2 a v v xt xt c1 c2 crystal 32.768 khz c 12 v ss v dd1 v dd2 v dd3 c a c b c a c b , c 12 r os rt0 cs0 ri0 : 1 m f : 0.1 m f : 300 k w : 10 k w /2 k w : 820 pf : 10 k w osc1 osc2 r os v dd rt0 cs0 ri0 rt0 cs0 in0 output v ss v dd1 v dd2 v dd3 (*2) input (*1) v ih v il v dd a
15/37 ? semiconductor MSM64P164 measuring circuit 3 measuring circuit 4 *1 input logic circuit to determine the specified measuring conditions. *2 measured at the specified output pins. *3 measured at the specified input pins. v dd2 output v ss v dd3 v dd (*3) input v dd1 a output v ss v dd2 v dd3 v dd input (*3) v ih v il waveform monitoring v dd1
16/37 ? semiconductor MSM64P164 a/d converter characteristics * kfx is the ratio of the oscillation frequency by a sensor resistor to the oscillation frequency by a reference resistor in the same condition. parameter symbol condition min. typ. max. unit measur- ing circuit resistor for oscillation cs0, ct0, cs1 3 740 pf 2.0 k w input current limiting resistor oscillation frequency rs?rt oscillation frequency ratio (*) ri0, ri1 f osc1 f osc2 f osc3 kf1 kf2 kf3 resistor for oscillation = 2 k w resistor for oscillation = 10 k w resistor for oscillation = 200 k w rt0, rt0-1, rt1 = 2 k w rt0, rt0-1, rt1 = 10 k w rt0, rt0-1, rt1 = 200 k w 1.0 165 41.8 2.55 3.89 0.990 0.0561 10 221 52.2 3.04 4.18 1.0 0.0584 256 60.6 3.53 4.35 1.010 0.0637 k w khz khz 5 rs0, rs1, rt0, rt0-1, rt1 khz (v ss = 0 v, v dd = 1.5 v, ta = 0 to +65c unless otherwise specified) kfx = f oscx (rs0Ccs0 oscillation) f oscx (rt0Ccs0 oscillation) ( x = 1 , 2 , 3 ) f oscx (rt0-1Ccs0 oscillation) f oscx (rs0Ccs0 oscillation) f oscx (rt1Ccs1 oscillation) f oscx (rs1Ccs1 oscillation) ,,
17/37 ? semiconductor MSM64P164 measuring circuit 5 d. u. t. v dd1 v dd v ss rt0, rt0-1, rt1 = 2 k w /10 k w /200 k w rs0, rs1 = 10 k w ri0, ri1 = 10 k w cs0, ct0, cs1 = 820 p f reset rt1 rt1 in1 cs1 rs1 rs1 cs1 ri1 ri0 in0 crt0 rs0 cs0 cs0 rs0 ct0 rt0-1 rt0 rt0 p4.3 tst1 tst2 p0.0 p0.1 p0.2 p0.3 (crosc1) (crosc0) oscillation mode specified frequency measurement (f oscx )
18/37 ? semiconductor MSM64P164 ac characteristics (serial interface) 1550 ns sclk input fall time t f sclk input "h" level pulse width t cwh m s sclk input cycle time t cyc m s t cyc2(o) m s m s 0.8 2.0 2.5 sout output delay time t ddr m s 0.4 0.5 m s 30.5 cpu is operating at 32.768 khz. cpu is operating at 400 khz. c l = 10 pf parameter symbol condition unit max. typ. min. t cyc1(o) 0.8 m s t ds t dh 1550 ns sclk input rise time t r 0.8 m s sclk input "l" level pulse width t cwl sclk output cycle time sclk output cycle time sin input setup time sin input hold time (v ss = 0 v, v dd1 = 1.5 v, v dd = 5 v, ta = 0 to +65c) sclk (p4.2) sout (p4.0) sin (p3.3) 5 v 5 v 5 v t cyc t cwh t cwl t ddr t ddr t dh t ds t ds t r t f ("h" level = 4 v, "l" level = 1 v)
19/37 ? semiconductor MSM64P164 absolute maximum ratings (3.0 v spec.) recommended operating conditions (3.0 v spec.) parameter power supply voltage 1 symbol condition rating unit v dd1 ta = 25c C0.3 to +2.0 v power supply voltage 2 v dd2 ta = 25c C0.3 to +4.0 v power supply voltage 3 v dd3 ta = 25c C0.3 to +5.5 v power supply voltage 4 v dd ta = 25c C0.3 to +5.5 v input voltage 1 v in1 v dd2 input, ta = 25c C0.3 to v dd2 + 0.3 v input voltage 2 v in2 v dd input, ta = 25c C0.3 to v dd + 0.3 v output voltage 1 v out1 v dd2 output, ta = 25c C0.3 to v dd2 + 0.3 v output voltage 2 v out2 v dd3 output ta = 25c C0.3 to v dd3 + 0.3 v output voltage 3 v out3 v dd output, ta = 25c C0.3 to v dd + 0.3 v (v ss = 0 v) storage temperature t stg C55 to +150 c parameter symbol condition range unit (v ss = 0 v) operating temperature t op 0 to +65 c operating voltage v dd2 2.7 to 3.5 v v dd v dd2 to 5.25 v external 400khz rc oscillator resistance r os 90 to 500 k w crystal oscillation frequency f xt 30 to 66 khz
20/37 ? semiconductor MSM64P164 electrical characteristics (3.0 v spec.) dc characteristics parameter +100% C20% symbol condition min. typ. max. unit measuring circuit v dd1 voltage v dd1 c a , c b , c 12 = 0.1 m f 1.3 1.5 1.7 v v dd3 voltage v dd3 c a , c b , c 12 = 0.1 m f 4.3 4.5 4.7 v crystal oscillation start voltage v sta oscillation start time: within 5 seconds 2.7 v crystal oscillation hold voltage v hold 2.7 v crystal oscillation stop detection time t stop 0.1 1000 ms internal crystal oscillator capacitance c g 101520pf external crystal oscillator capacitance c gex when external c g used 10 30 pf internal crystal oscillator capacitance c d 101520pf internal 400k rc oscillator capacitance c os 8 12 16 pf 400k rc oscillation frequency f osc external resistor r os = 100 k w v dd2 = 2.7 to 3.5 v 300 400 620 khz por generation voltage v por1 when v dd2 is between v por1 and 3.0 v 0 0.7 v por non-generation voltage v por2 no por when v dd2 is between v por2 and 3.0 v 2.7 3 v +100% C20% 1 (v ss = 0 v, v dd2 = v dd = 3.0 v, ta = 0 to +65c unless otherwise specified) notes: 1. "por" denotes power on reset. 2. "t stop " indicates that if the crystal oscillator stops over the value of t stop , the system reset occurs.
21/37 ? semiconductor MSM64P164 dc characteristics (continued) parameter symbol condition min. typ. max. unit measuring circuit supply current 1 i dd1 1.0 4.0 m a supply current 2 i dd2 supply current 3 i dd3 cpu in operating state (400k rc oscillation in operation) 220 450 m a supply current 4 i dd4 serial transfer, f sck = 300 khz, cpu in operating state (400k rc oscillation halt) supply current 5 i dd5 cpu in halt state (400k rc oscillation halt), rc oscillator for a/d converter is in operating state 300 450 m a 1 (v ss = 0 v, v dd2 = v dd = 3.0 v, ta = 0 to +65c unless otherwise specified) cpu in operating state (400k rc oscillation halt) cpu in halt state (400k rc oscillation halt) rt0 = 10 k w rt0 = 2 k w 2550 m a 3060 m a 1300 2000 m a
22/37 ? semiconductor MSM64P164 dc characteristics (continued) parameter (pin name) symbol condition unit measuring circuit output current 1 (p1.0) i oh1 v oh1 = v dd C 0.5 v min. typ. max. C6.0 C2.0 C0.7 ma i ol1 v ol1 = 0.5 v 3.0 8.0 25 ma output current 2 (p1.1 to p1.3) (p2.0 to p2.3) (p3.0 to p3.3) (p4.0 to p4.3) i oh2 C6.0 C2.0 C0.7 ma i ol2 v ol2 = 0.5 v 0.7 2.0 6.0 ma 2 output current 3 (bd) i oh3 v oh3 = v dd2 C 0.7 v C6.0 C2.0 C0.7 ma i ol3 v ol3 = 0.7 v 0.7 2.0 6.0 ma output current 4 (rt0, rt1, rs0, rs1, crt0, cs0, cs1) i oh4 v oh4 = v dd2 C 0.1 v C2.5 C1.3 C0.7 ma i ol4 v ol4 = 0.1 v 0.7 1.3 2.5 ma output current 5 (when l26 to l33 are configured as output ports) i oh5 v oh5 = v dd C 0.5 v C1.5 C0.6 C0.15 ma i ol5s v dd = 5 v, v ol5s = 0.5 v 0.2 0.7 2.0 ma output current 6 (osc2) i oh6 v oh6 = v dd2 C 0.5 v C6.0 C2.0 C0.7 ma i ol6 v ol6 = 0.5 v 0.7 2.0 6.0 ma i oh7 v oh7 = v dd3 C 0.2 v C4.0 m a i omh7 v omh7 = v dd2 + 0.2 v 4.0 m a i omh7s v omh7s = v dd2 C 0.2 v C4.0 m a i oml7 v oml7 = v dd1 + 0.2 v 4.0 m a i oml7s v oml7s = v dd1 C 0.2 v C4.0 m a i ol7 v ol7 = 0.2 v 4.0 m a output current 7 (l0 to l33) output leakage current (p1.0 to p1.3) (p2.0 to p2.3) (p3.0 to p3.3) (p4.0 to p4.3) (rt0, rt1, rs0, rs1, crt0, cs0, cs1) i ooh v oh = v dd2 0.3 m a i ool v ol = v ss C0.3 m a v oh2 = v dd C 0.5 v (v dd3 level) (v dd2 level) (v dd2 level) (v dd1 level) (v dd1 level) (v ss level) i ol1s v dd = 5 v, v ol1 = 0.5 v 4.0 12 36 ma i ol2s v dd = 5 v, v ol2 = 0.5 v 1.0 3.0 9.0 ma i ol5 v ol5 = 0.5 v 0.15 0.6 1.5 ma (v ss = 0 v, v dd1 = 1.5 v, v dd2 = v dd = 3.0 v, v dd3 = 4.5 v, ta = 0 to +65c unless otherwise specified)
23/37 ? semiconductor MSM64P164 dc characteristics (continued) parameter (pin name) symbol condition unit measuring circuit input current 1 (p0.0 to p0.3) (p2.0 to p2.3) (p3.0 to p3.3) (p4.0 to p4.3) i ih1 v ih1 = v dd (when pulled down) min. typ. max. 30 90 300 m a i il1 v il1 = v ss (when pulled up) C300 C90 C30 m a 3 i ih1z v ih1 = v dd (in a high impedance state) 0 1.0 m a i il1z v il1 = v ss (in a high impedance state) C1.0 0 m a i ih2 v ih2 = v dd2 (when pulled down) 30 90 300 m a i ih2z v ih2 = v dd2 (in a high impedance state) 0 1.0 m a i il2z v il2 = v ss2 (in a high impedance state) C1.0 0 m a i il3 v il3 = v ss (when pulled up) C300 C110 C10 m a i ih3z v ih3 = v dd2 (in a high impedance state) 0 1.0 m a i il3z v il3 = v ss (in a high impedance state) C1.0 0 m a i ih4 v ih4 = v dd2 0 1.0 m a i il4 v il4 = v ss C3.0 C1.5 C0.75 ma v ih1 2.4 3.0 v v il1 0 0.6 v v ih2 2.4 3.0 v v il2 0 0.6 v v ih3 2.4 3.0 v v il3 0 0.6 v input current 2 (in0, in1) input current 3 (osc1) input current 4 ( reset , tst1 , tst2 ) input voltage 1 (p0.0 to p0.3) (p2.0 to p2.3) (p3.0 to p3.3) (p4.0 to p4.3) input voltage 2 (in0, in1, osc1) input voltage 3 ( reset , tst1 , tst2 ) 4 i ih1s v ih1 = v dd = 5 v (when pulled down) 80 250 800 m a i il1s v il1 = v ss , v dd = 5 v (when pulled up) C800 C250 C80 m a v ih1s 4.0 5.0 v v il1s 0 1.0 v v dd = 5 v v dd = 5 v (v ss = 0 v, v dd1 = 1.5 v, v dd2 = v dd = 3.0 v, v dd3 = 4.5 v, ta = 0 to +65c unless otherwise specified)
24/37 ? semiconductor MSM64P164 dc characteristics (continued) parameter (pin name) symbol condition unit measuring circuit hysteresis width (p0.0 to p0.3) (p2.0 to p2.3) (p3.0 to p3.3) (p4.0 to p4.3) d v t1s v dd = 5 v min. typ. max. 0.25 1.0 1.5 v 4 d v t2 0.2 0.5 1.0 v c in 5.0 pf hysteresis width ( reset , tst1 , tst2 ) input pin capacitance (p0.0 to p0.3) (p2.0 to p2.3) (p3.0 to p3.3) (p4.0 to p4.3) 1 d v t1 0.2 0.5 1.0 v (v ss = 0 v, v dd1 = 1.5 v, v dd2 = v dd = 3.0 v, v dd3 = 4.5 v, ta = 0 to +65c unless otherwise specified)
25/37 ? semiconductor MSM64P164 measuring circuit 1 measuring circuit 2 a v v xt xt c1 c2 crystal 32.768 khz c 12 v ss v dd2 v dd1 v dd3 c a c b c a , c b , c 12 r os rt0 cs0 ri0 : 0.1 m f : 100 k w : 10 k w /2 k w : 820 pf : 10 k w osc1 osc2 r os v dd rt0 cs0 ri0 rt0 cs0 in0 output v ss v dd1 v dd2 v dd3 (*2) input (*1) v ih v il v dd a
26/37 ? semiconductor MSM64P164 measuring circuit 3 measuring circuit 4 *1 input logic circuit to determine the specified measuring conditions. *2 measured at the specified output pins. *3 measured at the specified input pins. v dd2 output v ss v dd3 v dd (*3) input v dd1 a output v ss v dd2 v dd3 v dd input (*3) v ih v il waveform monitoring v dd1
27/37 ? semiconductor MSM64P164 a/d converter characteristics parameter symbol condition min. typ. max. unit measur- ing circuit resistor for oscillation cs0, ct0, cs1 3 740 pf 1.0 k w input current limiting resistor oscillation frequency rs?rt oscillation frequency ratio (*) ri0, ri1 f osc1 f osc2 f osc3 kf1 kf2 kf3 resistor for oscillation = 2 k w resistor for oscillation = 10 k w resistor for oscillation = 200 k w rt0, rt0-1, rt1 = 2 k w rt0, rt0-1, rt1 = 10 k w rt0, rt0-1, rt1 = 200 k w 1.0 200 46.5 2.79 4.115 0.990 0.0573 10 239 55.4 3.32 4.22 1.0 0.0616 277 64.3 3.85 4.326 1.010 0.0659 k w khz khz 5 kfx = f oscx (rs0Ccs0 oscillation) f oscx (rt0Ccs0 oscillation) ( x = 1 , 2 , 3 ) rs0, rs1, rt0, rt0-1, rt1 khz f oscx (rt0-1Ccs0 oscillation) f oscx (rs0Ccs0 oscillation) f oscx (rt1Ccs1 oscillation) f oscx (rs1Ccs1 oscillation) ,, (v ss = 0 v, v dd2 = v dd = 3.0 v, ta = 0 to +65c unless otherwise specified) * kfx is the ratio of the oscillation frequency by a sensor resistor to the oscillation frequency by a reference resistor in the same condition.
28/37 ? semiconductor MSM64P164 measuring circuit 5 d. u. t. v dd2 v dd v ss rt0, rt0-1, rt1 = 2 k w /10 k w /200 k w rs0, rs1 = 10 k w ri0, ri1 = 10 k w cs0, ct0, cs1 = 820 p f reset rt1 rt1 in1 cs1 rs1 rs1 cs1 ri1 ri0 in0 crt0 rs0 cs0 cs0 rs0 ct0 rt0-1 rt0 rt0 p4.3 tst1 tst2 p0.0 p0.1 p0.2 p0.3 (crosc1) (crosc0) oscillation mode specified frequency measurement (f oscx )
29/37 ? semiconductor MSM64P164 ac characteristics (serial interface) ("h" level = 4 v, "l" level = 1 v) 1550 ns sclk input fall time t f sclk input "h" level pulse width t cwh m s sclk input cycle time t cyc m s t cyc2(o) m s m s 0.8 2.0 2.5 sout output delay time t ddr m s 0.4 0.5 m s 30.5 cpu is operating at 32.768 khz. cpu is operating at 400 khz. c l = 10 pf parameter symbol condition unit max. typ. min. t cyc1(o) 0.8 m s t ds t dh 1550 ns sclk input rise time t r 0.8 m s sclk input "l" level pulse width t cwl sclk output cycle time sclk output cycle time sin input setup time sin input hold time (v ss = 0 v, v dd2 = 3 v, v dd = 5 v, ta = 0 to +65c) sclk (p4.2) sout (p4.0) sin (p3.3) 5 v 5 v 5 v t cyc t cwh t cwl t ddr t ddr t dh t ds t ds t r t f
30/37 ? semiconductor MSM64P164 absolute maximum ratings (1.5 v/3.0 v spec., prom mode) recommended operating conditions (1.5 v/3.0 v spec., prom mode) storage temperature t stg C55 to +150 c parameter prom power supply voltage symbol condition rating unit v cc v cc = v dd1 = v dd2 , ta = 25c C0.3 to +6.7 v program voltage v pp ta = 25c C0.3 to +14.0 v prom input voltage v i v cc input, ta = 25c C0.3 to v cc + 0.3 v prom output voltage v o v cc output, ta = 25c C0.3 to v cc + 0.3 v (v ss = 0 v) parameter symbol condition range unit (v ss = 0 v) operating temperature t op 0 to 65 c v cc power supply voltage v cc v cc = v dd1 = v dd2 4.75 to 5.25 v v pp power supply voltage v pp during read 4.75 to 5.25 v during write 12.0 to 13.0 v input voltage v ih v cc = v dd1 = v dd2 4 to v cc v v il 0 to 1 v
31/37 ? semiconductor MSM64P164 electrical characteristics (1.5 v/3.0 v spec., prom mode) (1) read operation dc characteristics ac characteristics max. typ. min. symbol condition unit parameter i cc1 ma 35 v cc = v dd1 = v dd2 ce = v ih v cc power supply current (standby) i cc2 ma 100 v cc = v dd1 = v dd2 ce = v il v cc power supply current (operating) v ih v v cc 4.0 v cc = v dd1 = v dd2 input voltage v il 1.0 0 i oh C0.7 C2.0 output current i ol 0.7 0.2 v ol = 0.5 v C0.2 2.0 v ma ma v cc = v dd1 = v dd2 v oh = v cc C 0.5 v (v dd1 = v dd2 = v pp = 5 v 5%, ta = 25c 5c, unless otherwise specified) max. typ. min. symbol condition unit parameter t acc ns 120 address access time t ce ns 120 ce access time t oe ns 50 oe access time t df 40 0 output disable time ns oe = ce = v il oe = v il ce = v il ce = v il (v cc = 5 v 5%, v pp = v cc , ta = 25c 5c, unless otherwise specified) measurement conditions: input pulse level ...................... 0.45 v to 4.55 v input rise/fall time ................. 5 ns threshold level ........................ input 0.8 v, 2 v/output 0.8 v, 2 v
32/37 ? semiconductor MSM64P164 t ce address input ce oe t df t oe data output t acc
33/37 ? semiconductor MSM64P164 (2) write operation dc characteristics ac characteristics measurement conditions: input pulse level ...................... 0.45 v to 4.55 v input rise/fall time ................. less than 20 ns threshold level ........................ input 0.8 v, 2 v/output 0.8 v, 2 v max. typ. min. symbol condition unit parameter i pp ma 50 ce = v il v pp power supply current i cc ma 100 v cc = v dd1 = v dd2 v cc power supply current v ih v v cc 4.0 v cc = v dd1 = v dd2 input voltage v il 1.0 0 i oh C0.7 C2.0 output current i ol 0.7 0.2 v ol = 0.5 v C0.2 2.0 v ma ma v cc = v dd1 = v dd2 v oh = v cc C 0.5 v (v ss = 0 v, v dd1 = v dd2 = 5 v 5%, v pp = 12.5 v 0.5 v, ta = 25c 5c, unless otherwise specified) max. typ. min. symbol condition unit parameter t as m s 2.0 address setup time t oes m s 2.0 oe setup time t ds m s 2.0 data setup time t ah 0 address hold time m s t dh m s 2.0 data hold time t dfp ns 130 0 oe output floating delay time t vs m s 2.0 v pp power source setup time t pw 1.05 1.0 0.95 initial program pulse width ms t opw ms 78.75 2.85 additional program pulse width t oe ns 150 v dd1 = v dd2 6 v 0.25 v oe output effective delay time v dd1 = v dd2 6 v 0.25 v (v ss = 0 v, v dd1 = v dd2 = 5 v 5%, v pp = 12.5 v 0.5 v, ta = 25c 5c, unless otherwise specified)
34/37 ? semiconductor MSM64P164 data input-output address n data input data output t as t ds t dh t vs t ah t oe t dfp t pw t opw t oes address input v pp ce oe
35/37 ? semiconductor MSM64P164 osc2 osc1 v ss xt xt reset p1.0 p1.1 p1.2 p1.3 p0.0 p0.1 p0.2 p0.3 in0 cs0 rs0 crt0 rt0 in1 cs1 rs1 rt1 bd p4.3 p4.2 p4.1 p4.0 p3.3 v ss c2 c1 v dd3 v dd2 v dd v dd1 v pp tst2 tst1 r os 32.768 khz switch matrix (4 4) rs1 rt1 cs1 ri1 rt0 rs0 cs0 ri0 MSM64P164-xxx (1.5 v spec.) buzzer c 12 c b c1 1.5 v * ? without 5 v interface ? temperature measurement by two thermistors ?c g of crystal oscillator : internal * polarity is reversed when compared to mask rom version of this device. l33 l0 l c d c a crystal application circuits 1.5 v spec. application circuit
36/37 ? semiconductor MSM64P164 osc2 osc1 v ss xt xt reset p1.0 p1.1 p1.2 p1.3 p0.0 p0.1 p0.2 p0.3 in0 cs0 rs0 crt0 rt0 in1 cs1 rs1 rt1 bd p4.3 p4.2 p4.1 p4.0 p3.3 v ss c2 c1 v dd3 v dd2 v dd v dd1 v pp tst2 tst1 r os 32.768 khz c gex switch matrix (4 4) rs1 rt1 cs1 ri1 rt0 rs0 cs0 ri0 MSM64P164-xxx (3 v spec.) osc monitor sclk spr sout sin to the serial communication interface (5 v (v dd ) system) buzzer c 12 c b c a c2 3 v * 5 v * c s ? with 5 v interface ? temperature measurement by two thermistors ?c gex of crystal oscillator : external * polarity is reversed when compared to mask rom version of this device. l33 l0 l c d crystal application circuits (continued) 3.0 v spec. application circuit
37/37 ? semiconductor MSM64P164 (unit : mm) notes for mounting the surface mount type package the sop, qfp, tsop, soj, qfj (plcc), shp and bga are surface mount type packages, which are very susceptible to heat in reflow mounting and humidity absorbed in storage. therefore, before you perform reflow mounting, contact okis responsible sales person for the product name, package name, pin number, package code and desired mounting conditions (reflow method, temperature and times). qfp80-p-1420-0.80-bk package material lead frame material pin treatment solder plate thickness package weight (g) epoxy resin 42 alloy solder plating 5 m m or more 1.27 typ. mirror finish package dimensions

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