1/5 www.rohm.com c 2009 rohm co., ltd. all rights reserved. 2009.01 - rev. a 1.5v drive pch+pch mosfet TT8J1 z structure z dimensions (unit : mm) silicon p-channel mosfet z features 1) low on-resistance. 2) high power package. 3) low voltage drive. (1.5v) z applications switching z packaging specifications z inner circuit package code taping basic ordering unit (pieces) TT8J1 tr 3000 type z absolute maximum ratings (ta=25 c) ? 1 ? 2 ? 1 parameter v v dss symbol v v gss a i d a i dp a i s a i sp w / total p d c tch c tstg unit drain-source voltage gate-source voltage drain current total power dissipation channel temperature range of storage temperature continuous pulsed continuous pulsed ? 1 pw 10 s, duty cycle 1% ? 2 mounted on a ceramic board source current (body diode) ? 12 10 2.5 10 ? 0.8 ? 10 1.25 w / element 1.0 150 ? 55 to + 150 limits z thermal resistance parameter c / w / total rth(ch-a) symbol limits unit c hannel to ambient ? mounted on a ceramic board 100 c / w / element 125 ? each lead has same dimensions (8) (7) (5) (6) (1) (2) (4) (3) abbreviated symbol : j01 tsst8 (1) tr1 source (2) tr1 gate (3) tr2 source (4) tr2 gate (5) tr2 drain (6) tr2 drain (7) tr1 drain (8) tr1 drain ? 1 esd protection diode ? 2 body diode ? 2 ? 1 (8) (7) (1) (2) ? 2 ? 1 (6) (5) (3) (4) www.datasheet.co.kr datasheet pdf - http://www..net/
TT8J1 data sheet 2/5 www.rohm.com c 2009 rohm co., ltd. all rights reserved. 2009.01 - rev. a z electrical characteristics (ta=25 c) parameter symbol i gss y fs min. typ. max. unit conditions v (br) dss i dss v gs (th) r ds (on) c iss c oss c rss t d (on) t r t d (off) t f q g q gs q gd ? ? ? ? ? ? ? ? ? gate-source leakage drain-source breakdown voltage zero gate voltage drain current gate threshold voltage static drain-source on-state resistance forward transfer admittance input capacitance output capacitance reverse transfer capacitance turn-on delay time rise time turn-off delay time fall time total gate charge gate-source charge gate-drain charge ? pulsed ?? 10 av gs = 10v, v ds = 0v v dd ? 6v r l 2.4 ? / r g = 10 ? ? 12 ?? vi d = ? 1ma, v gs = 0v ??? 1 av ds = ? 12v, v gs = 0v ? 0.3 ?? 1.0 v v ds = ? 6v, i d = ? 1ma ? 44 61 i d = ? 2.5a, v gs = ? 4.5v ? 60 84 m ? m ? m ? i d = ? 1.2a, v gs = ? 2.5v ? 110 220 i d = ? 0.5a, v gs = ? 1.5v m ? ? 81 121 i d = ? 1.2a, v gs = ? 1.8v 3.5 ?? sv ds = ? 6v, i d = ? 2.5a ? 1350 ? pf v ds = ? 6v ? 130 125 ? pf v gs = 0v ? 9 ? pf f = 1mhz ? 35 ? ns ? 130 ? ns ? 85 ? ns ? 13 ? ns ? 2.5 ? nc ? 2.0 ? nc v gs = ? 4.5v ?? nc i d = ? 2.5a v dd ? 6 v i d = ? 1.2a v gs = ? 4.5v r l 5 ? r g = 10 ? z body diode characteristics (source-drain) (ta=25 c) v sd ? ? pulsed ??? 1.2 v i s = ? 2.5a, v gs = 0v forward voltage parameter symbol min. typ. max. unit conditions www.datasheet.co.kr datasheet pdf - http://www..net/
TT8J1 data sheet 3/5 www.rohm.com c 2009 rohm co., ltd. all rights reserved. 2009.01 - rev. a z electrical characteristic curves 10 100 1000 0.1 1 10 drain current : -i d [a] static drain-source on-stat e resistance : r ds (on) [m ? ] v gs = -1.5v pulsed ta= 125 c ta= 75c ta= 25c ta= - 25c 0 2 4 6 8 10 0 0.2 0.4 0.6 0.8 1 drain-source voltage -v ds [v] drain current -i d [a] v gs = -10v v gs = -4.5v v gs = -4.0v v gs = -2.5v v gs = -2.0v v gs = -1.6v v gs = -1.2v ta=25 pulsed 0.01 0.1 1 10 00.511.5 gate-source voltage : -v gs [v] drain current : -i d [a] v ds = -6v pulsed ta= 125 c ta= 75c ta= 25c ta= - 25c 10 100 1000 0.1 1 10 drain current : -i d [a] static drain-source on-stat e resistance : r ds (on) [m ? ] ta=25 pulsed v gs = -1.5v v gs = -1.8v v gs = -2.5v v gs = -4.5v . pulsed v gs = -10v v gs = -4.5v v gs = -2.5v v gs = -1.8v 10 100 1000 0.1 1 10 drain current : -i d [a] static drain-source on-stat e resistance : r ds (on) [m ? ] v gs = -2.5v pulsed ta= 125 c ta= 75c ta= 25c ta= - 25c 10 100 1000 0.1 1 10 drain current : -i d [a] static drain-source on-stat e resistance : r ds (on) [m ? ] v gs = -4.5v pulsed ta= 125 c ta= 75c ta= 25c ta= - 25c 10 100 1000 0.1 1 10 drain current : -i d [a] static drain-source on-stat e resistance : r ds (on) [m ? ] v gs = -1.8v pulsed ta= 125 c ta= 75c ta= 25c ta= - 25c fig.1 typical output characteristics( ) fig.2 typical output characteristics( ) fig.3 typical transfer characteristics fig.4 static drain-source on-state resistance vs. drain current( ) fig.5 static drain-source on-state resistance vs. drain current( ) fig.6 static drain-source on-state resistance vs. drain current( ) fig.7 static drain-source on-state resistance vs. drain current( ) fig.9 reverse drain current vs. sourse-drain voltage fig.8 static drain-source on-state resistance vs. drain current( ) www.datasheet.co.kr datasheet pdf - http://www..net/
TT8J1 data sheet 4/5 www.rohm.com c 2009 rohm co., ltd. all rights reserved. 2009.01 - rev. a 0 50 100 150 200 0510 gate-source voltage : -v gs [v] static drain-source on-stat e resistance : r ds (on) [m ? ] ta=25 pulsed i d = -1.2a i d = -2.5a 0 1 2 3 4 5 0 2 4 6 8 10 12 14 total gate charge : qg [nc] gate-source voltage : -v gs [v] ta=25 v dd = -6v i d = -2.5a r g =10 ? pulsed 10 100 1000 10000 0.01 0.1 1 10 100 drain-source voltage : -v ds [v] capacitance : c [pf] ciss coss ta=25 f=1mhz v gs =0v crss 0 1 10 100 0.1 1 10 forward transfer admittance : |yfs| [s] v ds = -6v pulsed ta= - 25c ta= 25c ta= 75c ta= 125c 1 10 100 1000 0.01 0.1 1 10 drain current : -i d [a] tr tf td(on) ta=25 v dd = -6v v gs =-4.5v r g =10 ? pulsed td(off) fig.10 static drain-source on-state resistance vs. gate source voltage fig.11 forward transfer admittance vs. drain current fig.12 dynamic input characteristics fig.13 typical capacitance vs. drain-source voltage fig.14 switching characteristics switching time : t [ ns ] drain current : -i d [a] www.datasheet.co.kr datasheet pdf - http://www..net/
TT8J1 data sheet 5/5 www.rohm.com c 2009 rohm co., ltd. all rights reserved. 2009.01 - rev. a z measurement circuits f ig.1-1 switching time measurement circu it v gs r g v ds d.u.t. i d r l v dd fig.1-2 switching waveforms 90% 90% 90% 10% 10 % 50% 10% 50% v gs pulse width v ds t on t off t r t d(on) t f t d(off) f ig.2-1 gate charge measurement circu it v gs i g(const.) r g v d s d.u.t. i d r l v dd fig.2-2 gate charge waveform v g v gs charge q g q gs q gd z notice this product might cause chip aging and breakdown under the large electrified environment. please consider to design esd protection circuit. www.datasheet.co.kr datasheet pdf - http://www..net/
appendix-rev4.0 thank you for your accessing to rohm product informations. more detail product informations and catalogs are available, please contact your nearest sales office. rohm customer support system the americas / europe / asia / japan contact us : webmaster@ rohm.co. jp www.rohm.com copyright ? 2009 rohm co.,ltd. 21 saiin mizosaki- cho, ukyo-ku, kyoto 615-8585, japan tel : +81-75-311-2121 fax : +81-75-315-0172 appendix notes no copying or reproduction of this document, in part or in whole, is permitted without the consent of rohm co.,ltd. the content specified herein is subject to change for improvement without notice. the content specified herein is for the purpose of introducing rohm's products (hereinafter "products"). if you wish to use any such product, please be sure to refer to the specifications, which can be obtained from rohm upon request. examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the products. the peripheral conditions must be taken into account when de signing circuits for mass production. great care was taken in ensuring the accuracy of the information specified in this document. however, should you incur any damage arising from any inaccuracy or misprint of such information, rohm shall bear no re- sponsibility for such damage. the technical information specified herein is intended only to show the typical functions of and examples of application circuits for the products. rohm does not grant you, explicitly or implicitly, any license to use or exer cise intellectual property or other rights held by rohm and other parties. rohm shall bear no re- sponsibility whatsoever for any dispute arising from the use of such technical information. the products specified in this document are intended to be used with general-use electronic equipment or devices (such as audio visual equipment, office-automation equipment, communication devices, elec- tronic ap pliances and amusement devices). the products are not designed to be radiation tolerant. while rohm always makes efforts to enhance the quality and reliability of its products, a product may fail or malfunction for a variety of reasons. please be sure to implement in your equipment using the products safety measures to guard against the possi bility of physical injury, fire or any other damage caused in the event of the failure of any product, such as derating, redundancy, fire control and fail-safe designs. rohm shall bear no responsibility whatsoever for your use of any product outside of the prescribed scope or not in accordance with the instruction manual. the products are not designed or manufactured to be used with any equipment, device or system which re quires an extremely high level of reliability the failure or malfunction of which may result in a direct threat to human life or create a risk of human injury (such as a medical instrument, transportation equipment, aerospace machinery, nuclear-reactor controller, fuel-controller or other safety device). rohm shall bear no responsibility in any way for use of any of the products for the above special purposes. if a product is intend- ed to be used for any such special purpose, please contact a rohm sales representative before purchasing. if you intend to export or ship overseas any product or technology specified herein that may be controlled under the foreign exchange and the foreign trade law, you will be required to obtain a license or permit under the law. www.datasheet.co.kr datasheet pdf - http://www..net/
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