symbol v ds v gs i dm t j , t stg symbol typ max 47.5 62.5 74 110 r jl 37 40 maximum junction-to-lead c steady-state c/w parameter units maximum junction-to-ambient a t 10s r ja c/w maximum junction-to-ambient a steady-state c/w junction and storage temperature range -55 to 150 c thermal characteristics t a =70c 1.28 w power dissipation t a =25c p d 2 a t a =70c 7 pulsed drain current b 40 continuous drain current a t a =25c i d 8.8 drain-source voltage 20 v gate-source voltage 12 v absolute maximum ratings t a =25c unless otherwise noted parameter maximum units AO6408 features v ds (v) = 20v i d = 8.8a (v gs = 10v) r ds(on) < 18m ? (v gs = 10v) r ds(on) < 20m ? (v gs = 4.5v) r ds(on) < 25m ? (v gs = 2.5v) r ds(on) < 32m ? (v gs = 1.8v) esd rating: 2000v hbm the AO6408 uses advanced trench technology to provide excellent r ds(on) and low gate charge. it offers operation over a wide gate drive range from 1.8v to 12v. it is esd protected. this device is suitable for use as a load switch. standard product AO6408 is pb- free (meets rohs & sony 259 specifications). a o6408l is a green product ordering option. a o6408 and AO6408l are electrically identical. g d d s d d 1 2 3 6 5 4 tsop-6 top view g d s general description effect transistor n-channel enhancement mode field www.freescale.net.cn 1 / 4
AO6408, AO6408l symbol min typ max units bv dss 20 v 10 t j =55c 25 i gss 10 a bv gso 12 v v gs(th) 0.5 0.75 1 v i d(on) 40 a 14.4 18 t j =125c 18.5 23 16 20 m ? 20.5 25 m ? 25.6 32 m ? g fs 33 s v sd 0.72 1 v i s 3a c iss 1810 2200 pf c oss 232 pf c rss 200 pf r g 1.6 2.2 ? q g 17.9 22 nc q gs 1.5 nc q gd 4.7 nc t d(on) 3.3 ns t r 5.9 ns t d(off) 44 ns t f 7.7 ns t rr 22 27 ns q rr 9.8 nc this product has been designed and qualified for the consumer market. applications or uses as critical components in life support devices or systems are not authorized. aos does not assume any liability arising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice v ds =0v, i g =250ua gate-source breakdown voltage body diode reverse recovery time body diode reverse recovery charge turn-off fall time switching parameters total gate charge v gs =4.5v, v ds =10v, i d =8.8a gate source charge gate drain charge turn-on delaytime v gs =10v, v ds =10v, r l =1.1 ? , r gen =3 ? reverse transfer capacitance turn-on rise time turn-off delaytime gate resistance v gs =0v, v ds =0v, f=1mhz forward transconductance v ds =5v, i d =8.8a diode forward voltage i s =1a maximum body-diode continuous current dynamic parameters input capacitance v gs =0v, v ds =10v, f=1mhz output capacitance r ds(on) static drain-source on-resistance v gs =10v, i d =8.8a m ? v gs =4.5v, i d =8a v gs =2.5v, i d =6a v gs =1.8v, i d =4a gate threshold voltage v ds =v gs i d =250 a on state drain current v gs =4.5v, v ds =5v v ds =16v, v gs =0v a gate-source leakage current v ds =0v, v gs =10v i f =8.8a, di/dt=100a/ s i f =8.8a, di/dt=100a/ s electrical characteristics (t j =25c unless otherwise noted) parameter conditions static parameters drain-source breakdown voltage i d =250 a, v gs =0v i dss zero gate voltage drain current a: the value of r ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the value in any given application depends on the user's specific board design. the current rating is based on the t 10s thermal resistance rating. b: repetitive rating, pulse width limited by junction temperature. c. the r ja is the sum of the thermal impedence from junction to lead r jl and lead to ambient. d. the static characteristics in figures 1 to 6 are obtained using 80 s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the soa curve provides a single pulse rating. rev3: august 2005 www.freescale.net.cn 2 / 4
AO6408, AO6408l typical electrical and thermal characteristics 0 10 20 30 40 012345 v ds (volts) fig 1: on-region characteristics i d (a) v gs =1.5v 2v 2.5v 4.5v 10v 0 4 8 12 16 20 0 0.5 1 1.5 2 2.5 v gs(volts) figure 2: transfer characteristics i d (a) 0 10 20 30 40 0 5 10 15 20 i d (a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) (m ? ) 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 1.2 v sd (volts) figure 6: body-diode characteristics i s (a) 25c 125c 0.8 1 1.2 1.4 1.6 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance v gs =2.5v,6a v gs =10v, 8.8a v gs =4.5v, 8a 0 10 20 30 40 0246810 v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) (m ? ) 25c 125c v ds =5v v gs =2.5v v gs =4.5v v gs =10v i d =6a v gs =1.8v, 4a v gs =1.8v 25c 125c www.freescale.net.cn 3 / 4
AO6408, AO6408l typical electrical and thermal characteristic s 0 1 2 3 4 5 0 4 8 12 16 20 q g (nc) figure 7: gate-charge characteristics v gs (volts) 0 400 800 1200 1600 2000 2400 2800 0 5 10 15 20 v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss 0 10 20 30 40 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 10: single pulse power rating junction-to- ambient (note e) power (w) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal impedance z ja normalized transient thermal resistance c oss c r ss 0.1 1.0 10.0 100.0 0.1 1 10 100 v ds (volts) i d (amps) figure 9: maximum forward biased safe operating area (note e) 100 s 10ms 1ms 0.1s 1s 1 0s dc r ds(on) limited t j(max) =150c t a =25c 10 s v ds =10v i d =8.8a single pulse d=t on /t t j,pk =t a +p dm .z ja .r ja r ja =62.5c/w t o n t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =150c t a =25c www.freescale.net.cn 4 / 4
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