BUZ31 01/10/2012 comset semiconductors 1/3 semiconductors power mos transistors feature absolute maximum ratings symbol ratings value unit v ds drain-source voltage 200 v i ds continuous drain current t c = 37c 14.5 a i dm pulsed drain current t c = 25c 58 i ar avalanche current, limited by t j max 14.5 e ar avalanche energy, periodic limited by t j max 9 mj e as avalanche energy, single pulse i d = 14.5 a, v dd = 50 v, r gs = 25 ? l = 1.42 mh, t j = 25c 200 v gs gate-source voltage 20 v r ds ( on ) drain-source on resistance 0.2 ? p t power dissipation at case temperature t c = 25c 95 w t j operating temperature -55 to +150 c t st g storage temperature range -55 to +150 thermal characteristics symbol ratings value unit r thjc thermal resistance, chip case <1.32 k/w r thja thermal resistance, chip to ambient <75 ? nchannel ? enhancement mode ? avalanche-rated ? to-220 envelope ? compliance to rohs.
BUZ31 01/10/2012 comset semiconductors 2/3 semiconductors electrical characteristics tc=25c unless otherwise noted symbol ratings test condition(s) min typ max unit v dss drain-source breakdown voltage i d = 250 a, v gs = 0 v 200 - - v v gs ( th ) gate-threshold voltage i d =1 ma, v gs = v ds 2.1 3 4 v i dss zero gate voltage drain current v ds = 200 v, v gs = 0 v t j = 25 c - 0.1 1 a v ds = 200 v, v gs = 0 v t j = 125 c - 1 100 i gss gate-source leakage current v gs = 20 v, v ds = 0 v - 10 100 na r ds ( on ) drain-source on resistance i d = 9 a, v gs = 10 v - 0.16 0.2 ? dynamic characteristics symbol ratings test condition(s) min typ max unit g fs transconductance v ds >2 * i d * r ds(on)max i d = 9 a 3 4.2 - s c iss input capacitance v gs = 0 v, v ds = 25 v f= 1mhz - 840 1120 pf c oss output capacitance - 180 270 c rss reverse transfer capacitance - 95 150 t d ( on ) turn-on delay time v dd = 30 v, v gs = 10 v i d = 3 a, r gs = 50 ? - 12 20 ns t r rise time - 50 75 t d ( off ) turn-off delay time - 150 200 t f fall time - 60 80 reverse diode symbol ratings test condition(s) min typ max unit i s inverse diode continuous forward current. t c = 25c - - 14.5 a i sm inverse diode direct current, pulsed. t c = 25c - - 58 v sd inverse diode forward voltage v gs = 0 v, i f = 29 a - 1.1 1.6 v t r r reverse recovery time v r = 100 v, i f = i s di f /dt = 100 a/s - 170 - ns q r r reverse recovery charge - 1.1 - c
BUZ31 01/10/2012 comset semiconductors 3/3 semiconductors mechanical data case to-220 dimensions (mm) min. max. a 9,90 10,30 b 15,65 15,90 c 13,20 13,40 d 6,45 6,65 e 4,30 4,50 f 2,70 3,15 g 2,60 3,00 h 15,75 17.15 l 1,15 1,40 m 3,50 3,70 n - 1,37 p 0,46 0,55 r 2,50 2,70 s 4,98 5,08 t 2.49 2.54 u 0,70 0,90 revised august 2012 ????????? ? information furnished is believed to be accurate and reliable. ho wever, comset semiconductors assumes no responsibility for the consequences of use of such information nor for any infringement of patents or ot her rights of third parties which may results from its use. da ta are subject to change without notice. co mset semiconductors makes no warranty, representation or guarantee re garding the suitability of its products for any particular purpose, nor does comset semicond uctors assume any liability aris ing out of the application or us e of any product and specifica lly disclaims any and all liability, including without limitation consequential or in cidental damages. comset semiconductors? products are not au thorized for use as critical components in life support devices or systems. ? ? www.comsetsemi.com info@comsetsemi.com pin 1 : gate pin 2 : drain pin 3 : source
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