2012-09-20 rev.2.0 TK40A06N1 1 mosfets silicon n-channel mos (u-mos -h) TK40A06N1 TK40A06N1 TK40A06N1 TK40A06N1 1. 1. 1. 1. applications applications applications applications ? switching voltage regulators 2. 2. 2. 2. features features features features (1) low drain-source on-resistance: r ds(on) = 8.4 m ? (typ.) (v gs = 10 v) (2) low leakage current: i dss = 10 a (max) (v ds = 60 v) (3) enhancement mode: v th = 2.0 to 4.0 v (v ds = 10 v, i d = 0.3 ma) 3. 3. 3. 3. packaging and internal circuit packaging and internal circuit packaging and internal circuit packaging and internal circuit 1: gate 2: drain 3: source to-220sis
2012-09-20 rev.2.0 TK40A06N1 2 4. 4. 4. 4. absolute maximum ratings (note) (t absolute maximum ratings (note) (t absolute maximum ratings (note) (t absolute maximum ratings (note) (t a a a a = 25 = 25 = 25 = 25 unless otherwise specified) unless otherwise specified) unless otherwise specified) unless otherwise specified) characteristics drain-source voltage gate-source voltage drain current (dc) drain current (dc) drain current (pulsed) power dissipation single-pulse avalanche energy avalanche current channel temperature storage temperature (silicon limit) (t c = 25 ) (t = 1 ms) (t c = 25 ) (note 1), (note 2) (note 1) (note 1) (note 3) symbol v dss v gss i d i d i dp p d e as i ar t ch t stg rating 60 20 60 40 126 30 40 40 150 -55 to 150 unit v a w mj a note: using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. please design the appropriate reliability upon reviewing the toshiba semiconductor reliability handbook ("handling precautions"/"derating concept and methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 5. 5. 5. 5. thermal characteristics thermal characteristics thermal characteristics thermal characteristics characteristics channel-to-case thermal resistance channel-to-ambient thermal resistance symbol r th(ch-c) r th(ch-a) max 4.16 62.5 unit /w note 1: ensure that the channel temperature does not exceed 150 . note 2: limited by silicon chip capability. note 3: v dd = 48 v, t ch = 25 (initial), l = 19.2 h, i ar = 40 a note: this transistor is sensitive to electrostatic discharge and should be handled with care.
2012-09-20 rev.2.0 TK40A06N1 3 6. 6. 6. 6. electrical characteristics electrical characteristics electrical characteristics electrical characteristics 6.1. 6.1. 6.1. 6.1. static characteristics (t static characteristics (t static characteristics (t static characteristics (t a a a a = 25 = 25 = 25 = 25 unless otherwise specified) unless otherwise specified) unless otherwise specified) unless otherwise specified) characteristics gate leakage current drain cut-off current drain-source breakdown voltage drain-source breakdown voltage gate threshold voltage drain-source on-resistance (note 4) symbol i gss i dss v (br)dss v (br)dsx v th r ds(on) test condition v gs = 20 v, v ds = 0 v v ds = 60 v, v gs = 0 v i d = 10 ma, v gs = 0 v i d = 10 ma, v gs = -20 v v ds = 10 v, i d = 0.3 ma v gs = 10 v, i d = 20 a min 60 45 2.0 typ. 8.4 max 0.1 10 4.0 10.4 unit a v m ? note 4: if a reverse bias is applied between gate and source, this device enters v (br)dsx mode. note that the drain- source breakdown voltage is lowered in this mode. 6.2. 6.2. 6.2. 6.2. dynamic characteristics (t dynamic characteristics (t dynamic characteristics (t dynamic characteristics (t a a a a = 25 = 25 = 25 = 25 unless otherwise specified) unless otherwise specified) unless otherwise specified) unless otherwise specified) characteristics input capacitance reverse transfer capacitance output capacitance gate resistance switching time (rise time) switching time (turn-on time) switching time (fall time) switching time (turn-off time) symbol c iss c rss c oss r g t r t on t f t off test condition v ds = 30 v, v gs = 0 v, f = 1 mhz see figure 6.2.1. min typ. 1700 40 580 2.0 14 30 13 36 max unit pf ? ns fig. fig. fig. fig. 6.2.1 6.2.1 6.2.1 6.2.1 switching time test circuit switching time test circuit switching time test circuit switching time test circuit 6.3. 6.3. 6.3. 6.3. gate charge characteristics (t gate charge characteristics (t gate charge characteristics (t gate charge characteristics (t a a a a = 25 = 25 = 25 = 25 unless otherwise specified) unless otherwise specified) unless otherwise specified) unless otherwise specified) characteristics total gate charge (gate-source plus gate-drain) gate-source charge 1 gate-drain charge gate switch charge symbol q g q gs1 q gd q sw test condition v dd 48 v, v gs = 10 v, i d = 40 a min typ. 23 8 7 10 max unit nc
2012-09-20 rev.2.0 TK40A06N1 4 6.4. 6.4. 6.4. 6.4. source-drain characteristics (t source-drain characteristics (t source-drain characteristics (t source-drain characteristics (t a a a a = 25 = 25 = 25 = 25 unless otherwise specified) unless otherwise specified) unless otherwise specified) unless otherwise specified) characteristics reverse drain current (dc) reverse drain current (pulsed) diode forward voltage reverse recovery time reverse recovery charge (note 5) (note 5) (note 6) (note 6) symbol i dr i drp v dsf t rr q rr test condition i dr = 40 a, v gs = 0 v i dr = 40 a, v gs = 0 v -di dr /dt = 100 a/ s min typ. 46 62 max 40 126 -1.2 unit a v ns nc note 5: ensure that the channel temperature does not exceed 150 . note 6: ensure that v ds peak does not exceed v dss . 7. 7. 7. 7. marking (note) marking (note) marking (note) marking (note) fig. fig. fig. fig. 7.1 7.1 7.1 7.1 marking marking marking marking note: a line under a lot no. identifies the indication of product labels. not underlined: [[pb]]/includes > mcv underlined: [[g]]/rohs compatible or [[g]]/rohs [[pb]] please contact your toshiba sales representative for details as to environmental matters such as the rohs compatibility of product. the rohs is the directive 2002/95/ec of the european parliament and of the council of 27 january 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment.
2012-09-20 rev.2.0 TK40A06N1 5 8. 8. 8. 8. characteristics curves (note) characteristics curves (note) characteristics curves (note) characteristics curves (note) fig. fig. fig. fig. 8.1 8.1 8.1 8.1 i i i i d d d d - v - v - v - v ds ds ds ds fig. fig. fig. fig. 8.2 8.2 8.2 8.2 i i i i d d d d - v - v - v - v ds ds ds ds fig. fig. fig. fig. 8.3 8.3 8.3 8.3 i i i i d d d d - v - v - v - v gs gs gs gs fig. fig. fig. fig. 8.4 8.4 8.4 8.4 v v v v ds ds ds ds - v - v - v - v gs gs gs gs fig. fig. fig. fig. 8.5 8.5 8.5 8.5 r r r r ds(on) ds(on) ds(on) ds(on) - i - i - i - i d d d d fig. fig. fig. fig. 8.6 8.6 8.6 8.6 r r r r ds(on) ds(on) ds(on) ds(on) - t - t - t - t a a a a
2012-09-20 rev.2.0 TK40A06N1 6 fig. fig. fig. fig. 8.7 8.7 8.7 8.7 i i i i dr dr dr dr - v - v - v - v ds ds ds ds fig. fig. fig. fig. 8.8 8.8 8.8 8.8 capacitance - v capacitance - v capacitance - v capacitance - v ds ds ds ds fig. fig. fig. fig. 8.9 8.9 8.9 8.9 v v v v th th th th - t - t - t - t a a a a fig. fig. fig. fig. 8.10 8.10 8.10 8.10 dynamic input/output characteristics dynamic input/output characteristics dynamic input/output characteristics dynamic input/output characteristics fig. fig. fig. fig. 8.11 8.11 8.11 8.11 p p p p d d d d - t - t - t - t c c c c (guaranteed maximum) (guaranteed maximum) (guaranteed maximum) (guaranteed maximum)
2012-09-20 rev.2.0 TK40A06N1 7 fig. fig. fig. fig. 8.12 8.12 8.12 8.12 r r r r th th th th /r /r /r /r th(ch-c) th(ch-c) th(ch-c) th(ch-c) - t - t - t - t w w w w (guaranteed maximum) (guaranteed maximum) (guaranteed maximum) (guaranteed maximum) fig. fig. fig. fig. 8.13 8.13 8.13 8.13 safe operating area safe operating area safe operating area safe operating area (guaranteed maximum) (guaranteed maximum) (guaranteed maximum) (guaranteed maximum) fig. fig. fig. fig. 8.14 8.14 8.14 8.14 e e e e as as as as - t - t - t - t ch ch ch ch (guaranteed maximum) (guaranteed maximum) (guaranteed maximum) (guaranteed maximum) fig. fig. fig. fig. 8.15 8.15 8.15 8.15 test circuit/waveform test circuit/waveform test circuit/waveform test circuit/waveform note: the above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted.
2012-09-20 rev.2.0 TK40A06N1 8 package dimensions package dimensions package dimensions package dimensions unit: mm weight: 1.7 g (typ.) package name(s) jeita: sc-67 toshiba: 2-10u1s nickname: to-220sis
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