? semiconductor components industries, llc, 2006 march, 2006 ? rev. 1 1 publication order number: ntjd4152/d NTJD4152P trench small signal mosfet 20 v, 0.88 a, dual p ? channel, esd protected sc ? 88 features ? leading trench technology for low r ds(on) performance ? small footprint package (sc70 ? 6 equivalent) ? esd protected gate ? pb ? free package is available applications ? load/power management ? charging circuits ? load switching ? cell phones, computing, digital cameras, mp3s and pdas maximum ratings (t j = 25 c unless otherwise stated) parameter symbol value unit drain ? to ? source voltage v dss ? 20 v gate ? to ? source voltage v gs 12 v continuous drain current (note 1) steady state t a = 25 c i d ? 0.88 a t a = 85 c ? 0.63 power dissipation (note 1) steady state t a = 25 c p d 0.272 w t a = 85 c 0.141 continuous drain current (note 2) t 5 s t a = 25 c i d ? 1.0 a t a = 85 c ? 0.72 power dissipation (note 2) t 5 s t a = 25 c p d 0.35 w t a = 85 c 0.181 pulsed drain current t 10 s i dm 3.0 a operating junction and storage temperature t j , t stg ? 55 to 150 c continuous source current (body diode) i s ? 0.48 a lead temperature for soldering purposes (1/8? from case for 10 s) t l 260 c thermal resistance ratings (note 1) parameter symbol max unit junction ? to ? ambient ? steady state r ja 460 c/w junction ? to ? ambient ? t 5 s r ja 357 junction ? to ? lead ? steady state r jl 226 stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. 1. surface mounted on fr4 board using 1 in sq pad size (cu area = 1.127 in sq [1 oz] including traces), steady state. 2. surface mounted on fr4 board using 1 in sq pad size (cu area = 1.127 in sq [1 oz] including traces), t 5 s. top view marking diagram & pin assignment http://onsemi.com d 1 g 2 s 2 s 1 g 1 6 5 4 1 2 3 v (br)dss r ds(on) typ i d max ? 20 v 215 m @ ? 4.5 v 345 m @ ? 2.5 v 600 m @ ? 1.8 v ? 0.88 a d 2 tk m 1 6 1 tk = device code m = date code = pb ? free package d1 g2 s2 s1 g1 d2 (note: microdot may be in either location) device package shipping ordering information NTJD4152Pt1 sot ? 363 3000 units/reel NTJD4152Pt1g sot ? 363 (pb ? free) 3000 units/reel ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our t ape and reel packaging specifications brochure, brd8011/d. sc ? 88/sot ? 363 case 419b style 28
NTJD4152P http://onsemi.com 2 electrical characteristics (t j =25 c unless otherwise stated) parameter symbol test condition min typ max unit off characteristics drain ? to ? source breakdown voltage v (br)dss v gs = 0 v, i d = ? 250 a ? 20 v zero gate voltage drain current i dss v gs = 0 v, v ds = ? 16 v t j = 25 c 1.0 a t j = 125 c 0.5 gate ? to ? source leakage current i gss v ds = 0 v, v gs = 4.5 v 0.03 1.0 a v ds = 0 v, v gs = 12 v 6.0 on characteristics (note 3) gate threshold voltage v gs(th) v gs = v ds , id = ? 250 a ? 0.45 v drain ? to ? source on resistance r ds(on) v gs = ? 4.5 v, i d = ? 0.88 a 215 260 m v gs = ? 2.5 v, i d = ? 0.71 a 345 500 v gs = ? 1.8 v, i d = ? 0.20 a 600 1000 forward transconductance g fs v ds = ? 10 v, i d = ? 0.88 a 3.0 s charges and capacitances input capacitance c iss v gs = 0 v, f = 1.0 mhz, v ds = ? 20 v 155 pf output capacitance c oss 25 reverse transfer capacitance c rss 18 total gate charge q g(tot) v gs = ? 4.5 v, v ds = ? 10 v, i d = ? 0.88 a 2.2 nc gate ? to ? source charge q gs 0.5 gate ? to ? drain charge q gd 0.65 switching characteristics (note 4) turn ? on delay time t d(on) v gs = ? 4.5 v, v dd = ? 10 v, i d = ? 0.5 a, r g = 20 5.8 ns rise time t r 6.5 turn ? off delay time t d(off) 13.5 fall time t f 3.5 drain ? source diode characteristics forward diode voltage v sd v gs = 0 v, i s = ? 0.48 a t j = 25 c ? 0.8 ? 1.2 v t j = 125 c ? 0.66 3. pulse test: pulse width 300 s, duty cycle 2%. 4. switching characteristics are independent of operating junction temperatures.
NTJD4152P http://onsemi.com 3 typical performance curves (t j = 25 c unless otherwise noted) ? 2 v 125 c 0 1 0.75 1.2 0.8 ? v ds , drain ? to ? source voltage (volts) ? i d, drain current (amps) 0.25 0 0.4 figure 1. on ? region characteristics 0 1 1.5 12 0.8 0.7 0.1 0.5 0 3.5 figure 2. transfer characteristics ? v gs , gate ? to ? source voltage (volts) 15 100 10 figure 3. on ? resistance vs. drain current and temperature ? v ds , drain ? to ? source voltage (volts) ? i dss, leakage current (na) ? i d, drain current (amps) 01 0.1 figure 4. on ? resistance vs. drain current and gate voltage ? i d, drain current (amps) ? 50 0 ? 25 25 1.0 0.8 0.6 0.4 0 50 125 100 figure 5. on ? resistance variation with temperature t j , junction temperature ( c) t j = 25 c 10000 5 t j = ? 55 c v gs = 0 v 0.3 75 150 t j = 25 c i d = ? 0.88 a v gs = ? 4.5 v r ds(on), drain ? to ? source resistance (normalized) 25 c r ds(on), drain ? to ? source resistance ( ) 2.0 v gs = ? 4.5 v ? 1 v 020 ? 1.25 v ? 1.5 v ? 1.75 v 0.25 0.2 1.6 2 1000 0.25 0.5 0.75 0.15 v gs = ? 4.5, ? 3.5 & ? 2.5 v figure 6. drain ? to ? source leakage current vs. voltage 0.4 1 1.0 ? i d, drain current (amps) 2.5 0 r ds(on), drain ? to ? source resistance ( ) v gs = ? 4.5 v 0.5 2.0 v gs = ? 2.5 v 0.7 0.9 1.5 0.5 0.9 10 t j = 125 c t j = ? 55 c 0.5 0.8 0.6 0.2 t j = 25 c v gs = ? 1.8 v 1.8 1.6 1.4 1.2 t j = 125 c t j = 150 c 2.5 3 0.2 0.3 0.4 0.5 0.6 v ds ? 20 v
NTJD4152P http://onsemi.com 4 typical performance curves (t j = 25 c unless otherwise noted) v ds = 0 v v gs = 0 v 0 10 10 350 150 100 50 0 20 gate ? to ? source or drain ? to ? source voltage (volts) c, capacitance (pf) 0 4 1 0 q g , total gate charge (nc) ? v gs, gate ? to ? source voltage (volts) t j = 25 c c oss c iss c rss i d = ? 0.88 a t j = 25 c 250 1.2 0.8 2 3 q2 q1 10 1 10 1 100 r g , gate resistance (ohms) t, time (ns) v dd = ? 10 v i d = ? 0.8 a v gs = ? 4.5 v 5 200 5 t d(off) t d(on) t f t r v gs v ds 15 0.4 0.6 0 ? v sd , source ? to ? drain voltage (volts) ? i s , source current (amps) v gs = 0 v t j = 25 c 0.7 0.1 0 0.3 0.5 figure 7. capacitance variation figure 8. gate ? to ? source voltage vs. total gate charge figure 9. resistive switching time variation vs. gate resistance figure 10. diode forward voltage vs. current 5 300 2 1.6 qt 100 0.2 0.5 0.3 0.1 0.2 0.4 0.4
NTJD4152P http://onsemi.com 5 package dimensions notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. 419b ? 01 obsolete, new standard 419b ? 02. e 0.2 (0.008) mm 123 d e a1 a a3 c l 654 ? e ? b 6 pl sc ? 88/sc70 ? 6/sot ? 363 case 419b ? 02 issue w dim min nom max millimeters a 0.80 0.95 1.10 a1 0.00 0.05 0.10 a3 b 0.10 0.21 0.30 c 0.10 0.14 0.25 d 1.80 2.00 2.20 0.031 0.037 0.043 0.000 0.002 0.004 0.004 0.008 0.012 0.004 0.005 0.010 0.070 0.078 0.086 min nom max inches 0.20 ref 0.008 ref h e h e e 1.15 1.25 1.35 e 0.65 bsc l 0.10 0.20 0.30 2.00 2.10 2.20 0.045 0.049 0.053 0.026 bsc 0.004 0.008 0.012 0.078 0.082 0.086 mm inches scale 20:1 0.65 0.025 0.65 0.025 0.50 0.0197 0.40 0.0157 1.9 0.0748 *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* style 26: pin 1. source 1 2. gate 1 3. drain 2 4. source 2 5. gate 2 6. drain 1 on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?t ypicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license un der its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended f or surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in a ny manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada japan : on semiconductor, japan customer focus center 2 ? 9 ? 1 kamimeguro, meguro ? ku, tokyo, japan 153 ? 0051 phone : 81 ? 3 ? 5773 ? 3850 NTJD4152P/d literature fulfillment : literature distribution center for on semiconductor p.o. box 61312, phoenix, arizona 85082 ? 1312 usa phone : 480 ? 829 ? 7710 or 800 ? 344 ? 3860 toll free usa/canada fax : 480 ? 829 ? 7709 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : http://onsemi.com order literature : http://www.onsemi.com/litorder for additional information, please contact your local sales representative.
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