?2001 fairchild semiconductor corporation rev. a, september 2001 FJZ594J si n-channel junction fet absolute maximum ratings t a =25 c unless otherwise noted electrical characteristics t a =25 c unless otherwise noted thermal characteristics t c =25 c unless otherwise noted symbol parameter ratings units v gdo gate-drain voltage -20 v i g gate current 10 ma i d drain current 1 ma p d power dissipation 100 mw t j junction temperature 150 c t stg storage temperature -55 ~ 150 c symbol parameter test condition min. typ. max. units bv gdo gate-drain breakdown voltage i g = -100ua -20 v v gs (off) gate-source cut-off voltage v ds =5v, i d =1 a -0.6 -1.5 v i dss drain current v ds =5v, v gs =0 150 350 a ly fs l forward transfer admittance v ds =5v, v gs =0, f=1mhz 0.4 1.2 ms c iss input capacitance v ds =5v, v gs =0, f=1mhz 3.5 pf c rss output capacitance v ds =5v, v gs =0, f=1mhz 0.65 pf v cc =4.5v, r l =1k ?, cin=15pf, see the specified test circuit g v voltage gain v in =10mv, f=1khz -3 db ? g vv reduced voltage characteristic v in =10mv, f=1khz v cc =4.5v 1.5v -1.2 -3.5 db ? g vf frequency characteristic f=1khz to 110hz -1 db z in input resistance f=1khz 25 m ? z o output resistance f=1khz 700 ? thd total harmonic distortion v in =10mv, f=1khz 1 % v no output noise voltage v in =0, a curve -110 db symbol parameter max units r ja thermal resistance, junction to ambient 1250 c/w FJZ594J capacitor microphone applications ? especially suited for use in audio, telephone capacitor microphones ? excellent voltage characteristic ? excellent transient characteristic 1. drain 2. source 3. gate sot-623f 1 2 3
?2001 fairchild semiconductor corporation FJZ594J rev. a, september 2001 typical characteristics figure 1. static characteristics figure 2. transfer characteristic figure 3. forward transfer admittance figure 4. cut-off voltage figure 5. input capacitance figure 6. reverse transfer capacitance 012345 0.0 50.0 100.0 150.0 200.0 250.0 300.0 350.0 400.0 v gs = - 0.3v v gs = - 0.2v v gs = - 0.1v v gs = 0 v i d [a], drain current v ds [v], drain-source voltage -1.0 -0.8 -0.6 -0.4 -0.2 0.0 0 50 100 150 200 250 300 v ds = 5v i dss = 200 a i d [ a], drain current v gs [v], gate-source voltage 0.1 1 0.1 1 10 v ds = 5v v gs = 0 f=1khz |y fs | [ms], forward transfer admittance i dss [ma], drain current 0.1 1 0.1 1 10 - - - v ds = 5v i d = 1 a v gs (off)[v], gate-source cut-off voltage i dss [ma], drain current 110 1 10 100 vgs = 0 f = 1mhz ciss [pf], input capacitance v ds [v], drain-source voltage 110 0.1 1 10 vgs = 0 f = 1mhz crss [pf], reverse transfer capacitance v ds [v], drain-source voltage
?2001 fairchild semiconductor corporation FJZ594J rev. a, september 2001 typical characteristics (continued) figure 7. power derating figure 8. output noise voltage figure 9. output resistance figure 10. input resistance figure 11. total hamonic distortion vs. i dss figure 12. reduced voltage characteristic 0 25 50 75 100 125 150 0 20 40 60 80 100 120 140 p d [mw], power dissipation ta [ o c], ambient temperature 10 100 1000 -120 -118 -116 -114 -112 -110 v no : v cc =4.5v v i = 0, a curve r l = 1k ? i dss : v ds =5v v no [db], output noise voltage i dss [ a], drain current 10 100 1000 200 300 400 500 600 700 z o : v cc =4.5v v in = 10mv f = 1khz i dss : v ds =5v z o [ ? ], output resistance i dss [ a], drain current 10 100 1000 26 28 30 32 34 36 z in : v cc =4.5v v in = 10mv f = 1khz i dss : v ds =5v z in [m ? ], input resistance i dss [ a], drain current 100 1000 1 10 100 thd: v cc = 4.5v v in = 30mv f = 1khz i dss : v ds = 5v thd [%], total harmonic distortion i dss [ a], drain current 10 100 1000 -6 -4 -2 0 2 4 ? g vv : v cc = 4.5v ->1.5v v in = 10mv f = 1khz i dss : v ds =5v ? g vv [db], reduced voltage characteristic i dss [ a], drain current
?2001 fairchild semiconductor corporation rev. a, september 2001 FJZ594J typical characteristics (continued) figure 13. total harmonic distortion vs. v in figure 14. voltage gain 0 40 80 120 160 200 240 0.1 1 10 100 thd: v cc = 4.5v f = 1khz i dss : v ds = 5v i dss = 200 a i dss = 400 a i dss = 100 a thd [%], total harmonic distortion v in [mv], input voltage 10 100 1000 -10 -8 -6 -4 -2 0 2 4 g v : v cc = 4.5v v in = 10mv r l = 1k ? f=1khz i dss : v ds = 5v g v [db], voltage gain i dss [ a], drain current c in =15p v vtvm osc r l =1k thd a + 33u v cc =4.5v v cc =1.5v b 1k specified test circuit
package demensions ?2001 fairchild semiconductor corporation rev. a, september 2001 FJZ594J dimensions in millimeters sot-623f
disclaimer fairchild semiconductor reserves the right to make changes without further notice to any products herein to improve reliability, function or design. fairchild does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. life support policy fairchild?s products are not authorized for use as critical components in life support devices or systems without the express written approval of fairchild semiconductor corporation. as used herein: ?2001 fairchild semiconductor corporation rev. h4 trademarks the following are registered and unregistered trademarks fairchild semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms datasheet identification product status definition advance information formative or in design this datasheet contains the design specifications for product development. specifications may change in any manner without notice. preliminary first production this datasheet contains preliminary data, and supplementary data will be published at a later date. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. no identification needed full production this datasheet contains final specifications. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. obsolete not in production this datasheet contains specifications on a product that has been discontinued by fairchild semiconductor. the datasheet is printed for reference information only. star*power is used under license acex? bottomless? coolfet? crossvolt ? densetrench? dome? ecospark? e 2 cmos? ensigna? fact? fact quiet series? fast ? fastr? frfet? globaloptoisolator? gto? hisec? isoplanar? littlefet? microfet? micropak? microwire? optologic? optoplanar? pacman? pop? power247? powertrench ? qfet? qs? qt optoelectronics? quiet series? slient switcher ? smart start? star*power? stealth? supersot?-3 supersot?-6 supersot?-8 syncfet? trutranslation? tinylogic? uhc? ultrafet ? vcx?
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