AOW2918 100v n-channel mosfet general description product summary v ds i d (at v gs =10v) 90a r ds(on) (at v gs =10v) < 7m w 100% uis tested 100% r g tested symbol v the AOW2918 uses trench mosfet technology that is uniquely optimized to provide the most efficient high frequency switching performance. power losses are minimized due to an extremely low combination of r ds(on) and c rss .in addition, switching behavior is well controlled with a soft recovery body diode.this dev ice is ideal for boost converters and synchronous rectifie rs for consumer, telecom, industrial power supplies and le d backlighting. v maximum units parameter absolute maximum ratings t a =25c unless otherwise noted 100v drain-source voltage 100 g d s top view to-262 bottom view g d s g d s v ds v gs i dm i as , i ar e as , e ar t j , t stg symbol t 10s steady-state steady-state r q jc maximum junction-to-case c/w c/w maximum junction-to-ambient a d 0.45 60 0.56 w power dissipation a p dsm w t a =70c 267 1.33 t a =25c t c =25c 2.1 133 t c =100c power dissipation b p d a t a =25c i dsm a t a =70c i d 90 70 t c =25c t c =100c 260 pulsed drain current c continuous drain current g mj avalanche current c 10 continuous drain current 61 13 a 35 avalanche energy l=0.1mh c v units junction and storage temperature range -55 to 175 c thermal characteristics parameter typ max v 20 gate-source voltage drain-source voltage 100 maximum junction-to-ambient a c/w r q ja 12 50 15 rev 0 : aug 2011 page 1 of 6
AOW2918 symbol min typ max units bv dss 100 v v ds =100v, v gs =0v 1 t j =55c 5 i gss 100 na v gs(th) gate threshold voltage 2.7 3.3 3.9 v i d(on) 260 a 5.6 7 t j =125c 9 12 g fs 34 s v sd 0.7 1 v i s 90 a c iss 2580 3430 pf c oss 1530 2035 pf c rss 37 63 pf r g 1.5 w q g (10v) 38 53 nc q gs 12 nc q gd 12 nc t d(on) 17 38 ns t r 24 53 ns t d(off) 30 66 ns t 24 53 ns i d =250 m a, v gs =0v v gs =10v, v ds =5v v gs =10v, i d =20a gate-body leakage current forward transconductance i s =1a,v gs =0v v ds =5v, i d =20a m w on state drain current r ds(on) static drain-source on-resistance diode forward voltage v gs =10v, v ds =50v, i d =20a electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions i dss m a zero gate voltage drain current drain-source breakdown voltage reverse transfer capacitance v gs =0v, v ds =50v, f=1mhz v ds =v gs
AOW2918 typical electrical and thermal characteristics 17 52 10 0 18 0 20 40 60 80 100 2 3 4 5 6 7 8 i d (a) v gs (volts) figure 2: transfer characteristics (note e) 0 2 4 6 8 10 0 5 10 15 20 25 30 r ds(on) (m w ww w ) i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) 0.8 1 1.2 1.4 1.6 1.8 2 0 25 50 75 100 125 150 175 200 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature (note e) v gs =10v i d =20a 25
AOW2918 typical electrical and thermal characteristics 17 52 10 0 18 0 2 4 6 8 10 0 5 10 15 20 25 30 35 40 v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 1000 2000 3000 4000 5000 0 20 40 60 80 100 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss 200 300 400 500 600 700 800 900 1000 0.001 0.01 0.1 1 10 power (w) pulse width (s) figure 10: single pulse power rating junction-to-ca se c oss c rss v ds =50v i d =20a t j(max) =175
AOW2918 typical electrical and thermal characteristics 17 52 10 0 18 0 50 100 150 200 250 300 0 25 50 75 100 125 150 175 power dissipation (w) t case (c) figure 13: power de-rating (note f) 0 20 40 60 80 100 0 25 50 75 100 125 150 175 current rating i d (a) t case (c) figure 14: current de - rating (note f) 1 10 100 1000 10000 1e-05 0.001 0.1 10 1000 power (w) pulse width (s) figure 15: single pulse power rating junction - to - t a =25
AOW2918 - + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off id + l vds bv unclamped inductive switching (uis) test circuit & waveforms vds dss 2 e = 1/2 li ar ar vdd vgs vgs rg dut - + vdc vgs id vgs i ig vgs - + vdc dut l vgs vds isd isd diode recovery test circuit & waveforms vds - vds + i f ar di/dt i rm rr vdd vdd q = - idt t rr rev0 : aug 2011 www.aosmd.com page 6 of 6
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