bdv67-a-b-c-d 26/09/2012 comset semiconductors 1/5 n n p p n n s s i i l l i i c c o o n n d d a a r r l l i i n n g g t t o o n n s s p p o o w w e e r r t t r r a a n n s s i i s s t t o o r r s s they are silicon epitaxial base transistors mounted in to-3pn. theyare designed for audio output stages and general amplifier and switching applications. complementary is bdv66-a-b-c compliance to rohs. absolute maximum ratings symbol ratings value unit v ceo collector-emitter voltage bdv67 60 v bdv67a 80 bdv67b 100 bdv67c 120 BDV67D 150 v cbo collector-base voltage bdv67 80 v bdv67a 100 bdv67b 120 bdv67c 140 BDV67D 160 v ebo emitter-base voltage bdv67 5.0 v bdv67a bdv67b bdv67c BDV67D i b base current bdv67 0.5 a bdv67a bdv67b bdv67c BDV67D i c collector current bdv67 16 a bdv67a bdv67b bdv67c BDV67D i cm bdv67 20 bdv67a bdv67b bdv67c BDV67D www.datasheet.net/ datasheet pdf - http://www..co.kr/
bdv67-a-b-c-d 26/09/2012 comset semiconductors 2/5 absolute maximum ratings symbol ratings value unit p t power dissipation @ t mb = 25 c bdv67 200 w bdv67a bdv67b bdv67c BDV67D t j junction temperature bdv67 150 c bdv67a bdv67b bdv67c BDV67D t s storage temperature bdv67 -65 to +150 bdv67a bdv67b bdv67c BDV67D thermal characteristics symbol ratings value unit r thj-mb thermal resistance, junction to mounting base 0.625 c / w switching times symbol ratings test condition(s) min typ max unit t on turn-on time i c = 10 a , v cc = 12 v i b1 = -i b2 = 40 ma - 1 - s t of f turn-off time - 3.5 - www.datasheet.net/ datasheet pdf - http://www..co.kr/
bdv67-a-b-c-d 26/09/2012 comset semiconductors 3/5 electrical characteristics tc=25c unless otherwise noted symbol ratings test condition(s) min typ mx unit i ceo collector cutoff current v ce = 30 v, i b = 0 bdv67 - - 1 ma v ce = 40 v, i b = 0 bdv67a - - v ce = 50 v, i b = 0 bdv67b - - v ce = 60 v, i b = 0 bdv67c - - v ce = 75 v, i b = 0 BDV67D - - i ebo emitter cutoff current v be = 5 v, i c = 0 bdv67 - - 5.0 ma bdv67a - - bdv67b - - bdv67c - - BDV67D - - i cbo collector-base cutoff current i b = 0 t j =25c v cb = 80 v bdv67 - - 1 ma v cb = 100 v bdv67a - - v cb = 120 v bdv67b - - v cb = 140 v bdv67c - - v cb = 160 v BDV67D - - i b = 0 t j =150 c v cb = 40 v bdv67 - - 4 v cb = 50 v bdv67a - - v cb = 60 v bdv67b - - v cb = 70 v bdv67c - - v cb = 80 v BDV67D - - v ceo collector-emitter breakdown voltage (*) i c = 30 ma, i b = 0 bdv67 60 - - v bdv67a 80 - - bdv67b 100 - - bdv67c 120 - - BDV67D 150 - - h fe dc current gain (*) v ce = 3 v, i c = 1 a bdv67 bdv67a bdv67b bdv67c BDV67D - 3000 - - v ce = 3 v, i c = 10 a 1000 - - v ce = 3 v, i c = 16 a - 1000 - v ce(sat) collector-emitter saturation voltage (*) i c = 10 a, i b = 40 ma bdv67 - - 2 v bdv67a bdv67b bdv67c BDV67D www.datasheet.net/ datasheet pdf - http://www..co.kr/
bdv67-a-b-c-d 26/09/2012 comset semiconductors 4/5 electrical characteristics tc=25c unless otherwise noted symbol ratings test condition(s) min typ max unit v be base-emitter voltage (*) v ce = 3 v, i c = 10 a bdv67 - - 2,5 v bdv67a bdv67b bdv67c BDV67D v f diode forward voltage i f = 10 a bdv67 - - 3 v bdv67a bdv67b bdv67c BDV67D c c collector capacitance i e = 0 a, v cb = 10 v f= 1 mhz bdv67 - 300 - pf bdv67a bdv67b bdv67c BDV67D (*) pulse width 300 s, duty cycle 2.0% www.datasheet.net/ datasheet pdf - http://www..co.kr/
bdv67-a-b-c-d 26/09/2012 comset semiconductors 5/5 mechanical data case to3pn n on isolated plastic package revised august 2012 ????????? ? information furnished is believed to be accurate and reliable. ho wever, comset semiconductors assumes no responsibility for the consequences of use of such information nor for any infringement of patents or ot her rights of third parties which may results from its use. da ta are subject to change without notice. co mset semiconductors makes no warranty, representation or guarantee re garding the suitability of its products for any particular purpose, nor does comset semicond uctors assume any liability aris ing out of the application or us e of any product and specifica lly disclaims any and all liability, including without limitation consequential or in cidental damages. comset semiconductors? products are not au thorized for use as critical components in life support devices or systems. ? ? www.comsetsemi.com info@comsetsemi.com dimensions (mm) min. max. a 15.20 1600 b 1.90 2.10 c 4.60 5.00 d 3.10 3.30 e 9.60 f 2.00 g 0.35 0.55 h 1.40 j 5.35 5.55 k 20.00 l 19.60 20.20 m 0.95 1.25 n 2.00 o 3.00 p 4.00 r 4.00 s 1.80 t 4.80 5.20 pin 1 : base pin 2 : collector pin 3 : emitter package collector www.datasheet.net/ datasheet pdf - http://www..co.kr/
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