a d v a n c e d s e m i c o n d u c t o r, i n c. rev. b 7525 ethel avenue ? north hollywood, ca 91605 ? (818) 982-1200 ? fax (818) 765-3004 1/1 specifications are subjec t to change without notice. characteristics t c = 25 c symbol none test conditions minimum typical maximum units bv ceo i c = 100 ma 35 v bv ces i c = 50 ma 70 v bv ebo i e = 20 ma 3.0 v i ces v e = 35 v 20 ma h fe v ce = 5.0 v i c = 7.0 a 15 80 --- c c v cb = 28 v f = 1.0 mhz 225 pf g p d 3 v ce = 28 v i c(zs) = 0.1 a f = 1.6-28 mhz p l = 15-130 w (pep) 12 37.5 -30 db db % npn silicon rf power transistor BLW77 description: the asi BLW77 is designed for use in class-ab or class-b operated high power transmitters in the h.f. and v.h.f bands and, as a linear amplifier in the h.f. band. features: ? p g = 12 db min. at 15-30 w/1.6-28 mhz ? common emitter ? omnigold ? metalization system maximum ratings i c 12 a v cb 70 v v ce 35 v p diss 245 w @ t c = 25 c t j -65 c to +200 c t stg -65 c to +150 c jc 0.71 c/w package style .500 4l flg 1 = collector 2 = base 3 & 4 = emitter
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