TLHE4200 vishay semiconductors 1 (5) rev. 3, 04-oct-00 www.vishay.com document number 83104 high intensity led in 3 mm tinted nondiffused package color type technology angle of half intensity yellow TLHE4200 alingap on gaas 22 description this device has been designed to meet the increasing demand for alingap technology. it is housed in a 3 mm clear plastic package. the small viewing angle of these devices provides a high brightness. all packing units are categorized in luminous intensity and color groups. that allows users to assemble with uniform appearance. features alingap technology standard 3 mm (t-1) package small mechanical tolerances suitable for dc and high peak current small viewing angle very high intensity luminous intensity color categorized 94 8488 applications status lights off / on indicator background illumination readout lights maintenance lights legend light absolute maximum ratings t amb = 25 c, unless otherwise specified TLHE4200 parameter test conditions symbol value unit reverse voltage v r 5 v dc forward current t amb 60 c i f 30 ma surge forward current t p 10 s i fsm 0.1 a power dissipation t amb 60 c p v 80 mw junction temperature t j 100 c operating temperature range t amb 40 to +100 c storage temperature range t stg 55 to +100 c soldering temperature t 5 s, 2 mm from body t sd 260 c thermal resistance junction/ambient r thja 400 k/w
TLHE4200 vishay semiconductors 2 (5) rev. 3, 04-oct-00 www.vishay.com document number 83104 optical and electrical characteristics t amb = 25 c, unless otherwise specified yellow ( TLHE4200 ) parameter test conditions type symbol min typ max unit luminous intensity i f = 10 ma i v 40 120 mcd dominant wavelength i f = 10 ma d 581 588 594 nm peak wavelength i f = 10 ma p 590 nm angle of half intensity i f = 10 ma j + 22 deg forward voltage i f = 20 ma v f 1.9 2.6 v reverse voltage i r = 10 a v r 5 v junction capacitance v r = 0, f = 1 mhz c j 15 pf typical characteristics (t amb = 25 c, unless otherwise specified) 020406080 0 25 50 75 100 125 p power dissipation ( mw ) v t amb ambient temperature ( 5 c ) 100 95 10887 figure 1. power dissipation vs. ambient temperature 0 10 20 30 40 60 020406080 i forward current ( ma ) f t amb ambient temperature ( 5 c ) 100 95 10894 50 figure 2. forward current vs. ambient temperature 0.4 0.2 0 0.2 0.4 0.6 95 10041 0.6 0.9 0.8 0 5 30 5 10 5 20 5 40 5 50 5 60 5 70 5 80 5 0.7 1.0 i relative luminous intensity v rel figure 3. rel. luminous intensity vs. angular displacement 1 10 100 1 1.5 2.0 2.5 3.0 v f forward voltage ( v ) 95 10878 f i forward current ( ma ) figure 4. forward current vs. forward voltage
TLHE4200 vishay semiconductors 3 (5) rev. 3, 04-oct-00 www.vishay.com document number 83104 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 102030405060708090100 t amb ambient temperature ( c ) 95 10880 i relative luminous intensity vrel i f = 10 ma figure 5. rel. luminous intensity vs. ambient temperature 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 1 10 100 96 11589 i relative luminous intensity vrel t p /t i f (ma) 50 5 20 2 0.5 0.2 0.1 0.05 0.02 1 figure 6. rel. lumin. intensity vs. forw. current/duty cycle 0.01 0.10 1.00 10.00 1 10 100 i f forward current ( ma ) 96 11588 i relative luminous intensity vrel figure 7. relative luminous intensity vs. forward current 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 550 560 570 580 590 600 610 620 630 640 650 wavelength ( nm ) 95 10881 i relative luminous intensity vrel i f = 10 ma figure 8. relative luminous intensity vs. wavelength
TLHE4200 vishay semiconductors 4 (5) rev. 3, 04-oct-00 www.vishay.com document number 83104 dimensions in mm 95 10913
TLHE4200 vishay semiconductors 5 (5) rev. 3, 04-oct-00 www.vishay.com document number 83104 ozone depleting substances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( odss ). the montreal protocol ( 1987 ) and its london amendments ( 1990 ) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2 . class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency ( epa ) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c ( transitional substances ) respectively. vishay semiconductor gmbh can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany telephone: 49 ( 0 ) 7131 67 2831, fax number: 49 ( 0 ) 7131 67 2423
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