advanced power p-channel enhancement mode electronics corp. power mosfet lower on-resistance bv dss -60v simple drive requirement r ds(on) 160m fast switching characteristic i d -10a description absolute maximum ratings symbol units v ds v v gs v i d @t c =25 a i d @t c =100 a i dm a p d @t c =25 w w/ t stg t j symbol value units rthj-c maximum thermal resistance, junction-case 4.5 /w rthj-a 62.5 /w rthj-a maximum thermal resistance, junction-ambient 110 /w data and specifications subject to change without notice 200807172 1 ap9578gh/j rating -60 + 25 -10 0.23 maximum thermal resistance, junction-ambient (pcb mount) 3 continuous drain current, v gs @ 10v -6 pulsed drain current 1 -45 thermal data parameter total power dissipation operating junction temperature range storage temperature range rohs-compliant product -55 to 150 linear derating factor 28 -55 to 150 parameter drain-source voltage gate-source voltage continuous drain current, v gs @ 10v g d s g d s to-252(h) g d s to-251(j) the to-252 package is widely preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as dc/dc converters. the through-hole version (AP9578GJ) is available for low-profile applications.
ap9578gh/j electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =-250ua -60 - - v ?? v dss / ? t j breakdown voltage temperature coefficient reference to 25 : , i d =-1ma - -0.06 - v/ : r ds(on) static drain-source on-resistance 2 v gs =-10v, i d =-5a - - 160 m ? ?
ap9578gh/j fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 135 145 155 165 175 246810 -v gs , gate-to-source voltage (v) r ds(on) (m ) i d =-3a t c =25 : 0.4 0.8 1.2 1.6 2.0 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d =-5a v g = - 10v 0.0 0.5 1.0 1.5 2.0 -50 0 50 100 150 t j , junction temperature ( o c) normalized -v gs(th) (v) 0.0 2.5 5.0 7.5 10.0 12.5 15.0 0 0.2 0.4 0.6 0.8 1 1.2 -v sd , source-to-drain voltage (v) -i s (a) t j =25 o c t j =150 o c 0 5 10 15 20 25 30 024681012 -v ds , drain-to-source voltage (v) -i d , drain current (a) -10v -7.0v -5.0v -4.5v v g = -3.0 v t c =25 o c 0 5 10 15 20 25 024681012 -v ds , drain-to-source voltage (v) -i d , drain current (a) t c = 150 o c -10v - 7 .0v -5.0v -4.5v v g = -3.0 v
fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. switching time waveform fig 12. gate charge waveform 4 ap9578gh/j t d(on) t r t d(off) t f v ds v gs 10% 90% q v g -4.5v q gs q gd q g charge 0 2 4 6 8 10 12 0 5 10 15 20 25 30 q g , total gate charge (nc) -v gs , gate to source voltage (v) i d = -5a v ds = -48v 10 100 1000 1 5 9 1317212529 -v ds , drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse 0.1 1 10 100 0.1 1 10 100 1000 -v ds , drain-to-source voltage (v) -i d (a) t c =25 o c single pulse 100us 1ms 10ms 100ms dc
package outline : to-252 millimeters min nom max a2 1.80 2.30 2.80 a3 0.40 0.50 0.60 b1 0.40 0.70 1.00 d 6.00 6.50 7.00 d1 4.80 5.35 5.90 e3 3.50 4.00 4.50 e3 f 2.20 2.63 3.05 f1 0.5 0.85 1.20 e1 5.10 5.70 6.30 e2 0.50 1.10 1.80 e -- 2.30 -- c 0.35 0.50 0.65 1.all dimensions are in millimeters. 2.dimension does not include mold protrusions. part marking information & packing : to-252 symbols e e d d1 e2 e1 f b1 f1 a2 a3 c r : 0.127~0.381 ( 0.1mm part number package code 9578gh ywwsss date code (ywwsss) ylast digit of the year wwweek ssssequence logo meet rohs requirement 5
package outline : to-251 min nom max a 2.20 2.30 2.40 a1 0.90 1.20 1.50 b1 0.50 0.69 0.88 b2 0.60 0.87 1.14 c 0.40 0.50 0.60 c1 0.40 0.50 0.60 d 6.40 6.60 6.80 d1 5.20 5.35 5.50 e 6.70 7.00 7.30 e1 5.40 5.80 6.20 e ---- 2.30 ---- f 5.88 6.84 7.80 meet rohs requirement for low voltage mosfet only
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