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| savantic semiconductor product specification silicon npn power transistors BUV23 description with to-3 package high dc current gain very fast switching times low collector saturation voltage applications designed for high current,high speed and high power application. pinning(see fig.2) pin description 1 base 2 emitter 3 collector absolute maximum ratings (tc=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 400 v v ceo collector-emitter voltage open base 325 v v ebo emitter-base voltage open collector 7 v i c collector current 30 a i cm collector current-peak 40 a i b base current 6 a p t total power dissipation t c =25 250 w t j junction temperature -65~200 t stg storage temperature -65~200 thermal characteristics symbol parameter max unit r th j-c thermal resistance junction to case 0.7 /w fig.1 simplified outline (to-3) and symbol
savantic semiconductor product specification 2 silicon npn power transistors BUV23 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =0.2a; i b =0;l=25mh 325 v v (br)ebo emitter-base breakdown voltage i e =50ma; i c =0 7 v v cesat-1 collector-emitter saturation voltage i c =8 a;i b =1.6a 0.8 v v cesat-2 collector-emitter saturation voltage i c =16 a;i b =3.2 a 1.0 v v besat base-emitter saturation voltage i c =16 a;i b =3.2 a 1.5 v i cex collector cut-off current v ce =400v;v be =-1.5v t c =125 3.0 12 ma i ceo collector cut-off current v ce =260v;i b =0 3 ma i ebo emitter cut-off current v eb =5v; i c =0 1.0 ma h fe-1 dc current gain i c =8a ; v ce =4v 15 60 h fe-2 dc current gain i c =16a ; v ce =4v 8 f t transition frequency i c =2a ; v ce =15v; f=4mhz 8.0 mhz switching times t on turn-on time 0.8 s t s storage time 2.5 s t f fall time i c =16a ;i b1 =-i b2 =3.2a v cc =100v ;r c =6.25 d 0.4 s savantic semiconductor product specification 3 silicon npn power transistors BUV23 package outline fig.2 outline dimensions |
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