IRFW630B / irfi630b IRFW630B / irfi630b 200v n-channel mosfet general description these n-channel enhancement mode power field effect transistors are produced using fairchild?s proprietary, planar, dmos technology. this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. these devices are well suited for high efficiency switching dc/dc converters, switch mode power supplies, dc-ac converters for uninterrupted power supply and motor control. features 9.0a, 200v, r ds(on) = 0.4 ? @v gs = 10 v low gate charge ( typical 22 nc) low crss ( typical 22 pf) fast switching 100% avalanche tested improved dv/dt capability absolute maximum ratings t c = 25c unless otherwise noted thermal characteristics symbol parameter IRFW630B / irfi630b units v dss drain-source voltage 200 v i d drain current - continuous (t c = 25c) 9.0 a - continuous (t c = 100c) 5.7 a i dm drain current - pulsed (note 1) 36 a v gss gate-source voltage 30 v e as single pulsed avalanche energy (note 2) 160 mj i ar avalanche current (note 1) 9.0 a e ar repetitive avalanche energy (note 1) 7.2 mj dv/dt peak diode recovery dv/dt (note 3) 5.5 v/ns p d power dissipation (t a = 25c) * 3.13 w power dissipation (t c = 25c) 72 w - derate above 25c 0.57 w/c t j , t stg operating and storage temperature range -55 to +150 c t l maximum lead temperature for soldering purposes, 1/8 " from case for 5 seconds 300 c symbol parameter typ max units r jc thermal resistance, junction-to-case -- 1.74 c / w r ja thermal resistance, junction-to-ambient * -- 40 c / w r ja thermal resistance, junction-to-ambient -- 62.5 c / w ! ! ! ! ! ! ! ! ! ! ! ! ? ? ? ? ! ! ! ! ! ! ! ! ! ! ! ! ? ? ? ? s d g d 2 -pak irfw series i 2 -pak irfi series gs d gs d www.kersemi.com
IRFW630B / irfi630b (note 4) (note 4, 5) (note 4, 5) (note 4) electrical characteristics t c = 25c unless otherwise noted notes: 1. repetitive rating : pulse width limited by maximum junction temperature 2. l = 3mh, i as = 9.0a, v dd = 50v, r g = 25 ?, starting t j = 25c 3. i sd 9.0a, di/dt 300a/ s, v dd bv dss, starting t j = 25c 4. pulse test : pulse width 300 s, duty cycle 2% 5. essentially independent of operating temperature symbol parameter test conditions min typ max units off characteristics bv dss drain-source breakdown voltage v gs = 0 v, i d = 250 a 200 -- -- v ? bv dss / ? t j breakdown voltage temperature coefficient i d = 250 a, referenced to 25c -- 0.2 -- v/c i dss zero gate voltage drain current v ds = 200 v, v gs = 0 v -- -- 10 a v ds = 160 v, t c = 125c -- -- 100 a i gssf gate-body leakage current, forward v gs = 30 v, v ds = 0 v -- -- 100 na i gssr gate-body leakage current, reverse v gs = -30 v, v ds = 0 v -- -- -100 na on characteristics v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 2.0 -- 4.0 v r ds(on) static drain-source on-resistance v gs = 10 v, i d = 4.5 a -- 0.34 0.4 ? g fs forward transconductance v ds = 40 v, i d = 4.5 a -- 7.05 -- s dynamic characteristics c iss input capacitance v ds = 25 v, v gs = 0 v, f = 1.0 mhz -- 550 720 pf c oss output capacitance -- 85 110 pf c rss reverse transfer capacitance -- 22 29 pf switching characteristics t d(on) turn-on delay time v dd = 100 v, i d = 9.0 a, r g = 25 ? -- 11 30 ns t r turn-on rise time -- 70 150 ns t d(off) turn-off delay time -- 60 130 ns t f turn-off fall time -- 65 140 ns q g total gate charge v ds = 160 v, i d = 9.0 a, v gs = 10 v -- 22 29 nc q gs gate-source charge -- 3.6 -- nc q gd gate-drain charge -- 10.2 -- nc drain-source diode characteristics and maximum ratings i s maximum continuous drain-source diode forward current -- -- 9.0 a i sm maximum pulsed drain-source diode forward current -- -- 36 a v sd drain-source diode forward voltage v gs = 0 v, i s = 9.0 a -- -- 1.5 v t rr reverse recovery time v gs = 0 v, i s = 9.0 a, di f / dt = 100 a/ s -- 140 -- ns q rr reverse recovery charge -- 0.87 -- c
IRFW630B / irfi630b 10 -1 10 0 10 1 10 -1 10 0 10 1 v gs top : 15.0 v 10.0 v 8.0 v 7.0 v 6.5 v 6.0 v 5.5 v bottom : 5.0 v $ notes : 1. 250 % s pulse test 2. t c = 25 & i d , drain current [a] v ds , drain-source voltage [v] 0 5 10 15 20 25 0.0 0.5 1.0 1.5 2.0 2.5 v gs = 20v v gs = 10v $ note : t j = 25 & r ds(on) [ ' ], drain-source on-resistance i d , drain current [a] 2 46810 10 -1 10 0 10 1 150 o c 25 o c -55 o c $ notes : 1. v ds = 40v 2. 250 % s pulse test i d , drain current [a] v gs , gate-source voltage [v] 0 4 8 12 16 20 24 0 2 4 6 8 10 12 v ds = 100v v ds = 40v v ds = 160v $ note : i d = 9.0 a v gs , gate-source voltage [v] q g , total gate charge [nc] 10 -1 10 0 10 1 0 500 1000 1500 c oss c iss = c gs + c gd (c ds = shorted) c oss = c ds + c gd c rss = c gd $ notes : 1. v gs = 0 v 2. f = 1 mhz c rss c iss capacitance [pf] v ds , drain-source voltage [v] 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 10 -1 10 0 10 1 150 & $ notes : 1. v gs = 0v 2. 250 % s pulse test 25 & i dr , reverse drain current [a] v sd , source-drain voltage [v] typical characteristics figure 5. capacitance characteristics figure 6. gate charge characteristics figure 3. on-resistance variation vs drain current and gate voltage figure 4. body diode forward voltage variation with source current and temperature figure 2. transfer characteristics figure 1. on-region characteristics
IRFW630B / irfi630b 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 10 0 $ notes : 1. z ( jc (t) = 1.74 & /w m ax. 2. d uty factor, d=t 1 /t 2 3. t jm - t c = p dm * z ( jc (t) sin gle pu lse d=0.5 0.02 0.2 0.05 0.1 0.01 z ( jc (t), therm al r esponse t 1 , square w ave pulse duration [sec] 25 50 75 100 125 150 0 2 4 6 8 10 i d , drain current [a] t c , case temperature [ & ] 10 0 10 1 10 2 10 -1 10 0 10 1 10 2 dc 10 ms 1 ms 100 s operation in this area is limited by r ds(on) $ notes : 1. t c = 25 o c 2. t j = 150 o c 3. single pulse i d , drain current [a] v ds , drain-source voltage [v] -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 $ notes : 1. v gs = 10 v 2. i d = 4.5 a r ds(on) , (normalized) drain-source on-resistance t j , junction temperature [ o c] -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 $ notes : 1. v gs = 0 v 2. i d = 250 % a bv dss , (normalized) drain-source breakdown vol tage t j , junction temperature [ o c] typical characteristics figure 9. maximum safe operating area figure 10. maximum drain current vs case temperature figure 7. breakdown voltage variation vs temperature figure 8. on-resistance variation vs temperature figure 11. transient thermal response curve t 1 p dm t 2
IRFW630B / irfi630b charge v gs 10v q g q gs q gd 3ma v gs dut v ds 300nf 50k 200nf 12v same type as dut charge v gs 10v q g q gs q gd 3ma v gs dut v ds 300nf 50k 200nf 12v same type as dut v gs v ds 10% 90% t d(on) t r t on t off t d(off) t f v dd 10v v ds r l dut r g v gs v gs v ds 10% 90% t d(on) t r t on t off t d(off) t f v dd 10v v ds r l dut r g v gs e as =li as 2 ---- 2 1 -------------------- bv dss -v dd bv dss v dd v ds bv dss t p v dd i as v ds (t) i d (t) time 10v dut r g l i d t p e as =li as 2 ---- 2 1 e as =li as 2 ---- 2 1 ---- 2 1 -------------------- bv dss -v dd bv dss v dd v ds bv dss t p v dd i as v ds (t) i d (t) time 10v dut r g l l i d i d t p gate charge test circuit & waveform resistive switching test circuit & waveforms unclamped inductive switching test circuit & waveforms
IRFW630B / irfi630b peak diode recovery dv/dt test circuit & waveforms dut v ds + _ driver r g same type as dut v gs dv/dt controlled by r g i sd controlled by pulse period v dd l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- dut v ds + _ driver r g same type as dut v gs dv/dt controlled by r g i sd controlled by pulse period v dd l l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- d = gate pulse width gate pulse period --------------------------
IRFW630B / irfi630b package dimensions 10.00 0.20 10.00 0.20 (8.00) (4.40) 1.27 0.10 0.80 0.10 0.80 0.10 (2xr0.45) 9.90 0.20 4.50 0.20 0.10 0.15 2.40 0.20 2.54 0.30 15.30 0.30 9.20 0.20 4.90 0.20 1.40 0.20 2.00 0.10 (0.75) (1.75) (7.20) 0 ~3 1.20 0.20 9.20 0.20 15.30 0.30 4.90 0.20 (0.40) 2.54 typ 2.54 typ 1.30 +0.10 ?.05 0.50 +0.10 ?.05 d 2 -pak
IRFW630B / irfi630b package dimensions 9.90 0.05 0.50 +0.10 0.05 i 2 -pak
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