sot-89-3l 1. base 2. collector 3. emitter sot-89-3l plastic-encapsulate transistors HM879 transistor (npn) features z high current z low voltage z general purpose amp lifier applications marking:879 maximum ratings (t a =25 unless otherwise noted) electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c =10a,i e =0 30 v collector-emitter breakdown voltage v (br)ceo i c =1ma,i b =0 10 v emitter-base breakdown voltage v (br)ebo i e =10a,i c =0 6 v collector cut-off current i cbo v cb =20v,i e =0 100 na emitter cut-off current i ebo v eb =4v,i c =0 100 na dc current gain h fe v ce =2v, i c =3a 140 collector-emitter saturation voltage v ce(sat) i c =3a,i b =60ma 0.4 v base-emitter voltage v be v ce =1v, i c =2a 1.5 v transition frequency f t v ce =10v,i c =50ma 200 mhz collector output capacitance c ob v cb =10v, i e =0, f=1khz 30 pf symbol parameter value unit v cbo collector-base voltage 30 v v ceo collector-emitter voltage 10 v v ebo emitter-base voltage 6 v i c collector current 3 a p c collector power dissipation 500 mw r ja thermal resistance from junction to ambient 250 / w t j junction temperature 150 t stg storage temperature -55~+150 1 of 1 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
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