cystech electronics corp. spec. no. : c913q8 issued date : 2013.06.18 revised date : page no. : 1/9 MTP4463Q8 cystek product specification p-channel enhancement mode power mosfet MTP4463Q8 description the MTP4463Q8 is a p-channel enhancement-mode mo sfet, providing the designer with the best combination of fast switching, ruggedized device de sign, low on-resistance and cost effectiveness. the sop-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applicati ons such as dc/dc converters. features ? simple drive requirement ? low on-resistance ? fast switching speed ? pb-free and halogen-free package equivalent circuit outline MTP4463Q8 sop-8 g gate s source d drain bv dss -20v i d -14a r dson @v gs =-4.5v, i d =-14a 8.8m (typ) r dson @v gs =-2.5v, i d =-10a 12.8m (typ)
cystech electronics corp. spec. no. : c913q8 issued date : 2013.06.18 revised date : page no. : 2/9 MTP4463Q8 cystek product specification absolute maximum ratings (t c =25 c, unless otherwise noted) parameter symbol limits unit drain-source breakdown voltage bv dss -20 v gate-source voltage v gs 12 v continuous drain current @t a =25 c i d -14 a continuous drain current @t a =70 c i d -11.2 a pulsed drain current (note 1) i dm -60 a t a =25 c 3.1 w power dissipation (note 2) t a =70 c p d 2 w operating junction and storage temp erature range tj ; tstg -55~+150 c note : 1.pulse width limited by maximum junction temperature. 2. surface mounted on 1 in2 copper pad of fr-4 board, t 10s. thermal resistance ratings thermal resistance symbol maximum unit junction-to-case r jc 20 junction-to-ambient (note) r ja 40 c / w note : w when mounted on a 1 in 2 pad of 2 oz copper, t 10s; 125 c c/w when mounted on minimum copper pad. electrical characteristics (tc=25 c, unless otherwise noted) symbol min. typ. max. unit test conditions static bv dss -20 - - v gs =0v, i d =-250 a v gs(th) -0.5 -0.62 -1.5 v v ds =v gs , i d =-250 a i gss - - 100 na v gs =12v, v ds =0v i dss - - -1 v ds =-16v, v gs =0v i dss - - -10 a v ds =-16v, v gs =0, tj=125 c - 8.8 11 i d =-14a, v gs =-4.5v r ds(on) (note 1) - 12.8 17 m i d =-10a, v gs =-2.5v g fs (note 1) - 22 - s v ds =-10v, i d =-10a dynamic ciss - 4107 - coss - 415 - crss - 368 - pf v ds =-10v, v gs =0, f=1mhz t d(on) (note 1&2) - 42 - t r (note 1&2) - 23 - t d(off) (note 1&2) - 136 - t f (note 1&2) - 74 - ns v ds =-10v, i d =-1a, v gs =-4.5v, r g =6 qg (note 1&2) - 35 - qgs (note 1&2) - 8.3 - qgd (note 1&2) - 11 - nc v ds =-10v, i d =-14a, v gs =-4.5v
cystech electronics corp. spec. no. : c913q8 issued date : 2013.06.18 revised date : page no. : 3/9 MTP4463Q8 cystek product specification electrical characteristics(cont.) (tj=25 c, unless otherwise specified) symbol min. typ. max. unit test conditions source-drain diode i s - - -2.3 i sm (note 3) - - -9.2 a v sd (note 1) - -0.67 -1 v i s =-1.5a, v gs =0v trr - 50 - ns qrr - 36 - nc i f =-2.3a, di f /dt=100a/ s note : 1.pulse test : pulse width 300 s, duty cycle 2% 2.independent of operating temperature 3.pulse width li mited by maximum j unction temperature ordering information device package shipping MTP4463Q8-0-t1-g sop-8 (pb-free lead plating an d halogen-free package) 2500 pcs/ tape & reel
cystech electronics corp. spec. no. : c913q8 issued date : 2013.06.18 revised date : page no. : 4/9 MTP4463Q8 cystek product specification typical characteristics typical output characteristics 0 10 20 30 40 50 60 012345 -v ds , drain-source voltage(v) -i d , drain current (a) -10v, -5v, -4.5v, -4v,-3.5v,-3v,-2.5v -2v v gs =-1.5v normalized brekdown voltage vs ambient temperature 0.6 0.8 1 1.2 1.4 -60 -20 20 60 100 140 180 tj, junction temperature(c) -bv dss , normalized drain-source breakdown voltage i d =-250 a, v gs =0v static drain-source on-state resistance vs drain current 1 10 100 0.1 1 10 100 -i d , drain current(a) r ds(on) , static drain-source on-state resistance(m) v gs =-2.5v v gs =-1.5v v gs =-4.5v v gs =-3v source drain current vs source-drain voltage 0.2 0.4 0.6 0.8 1 1.2 04812162 -i s , source drain current(a) -v sd , source-drain voltage(v) 0 v gs =0v tj=25c tj=150c static drain-source on-state resistance vs gate-source voltage 0 10 20 30 40 50 024681 0 normalized drain-source on-state resistance vs junction tempearture 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 -60 -20 20 60 100 140 180 tj, junction temperature(c) r ds(on) , normalized static drain- source on-state resistance v gs =-4.5v, i d =-14a r ds( on) @tj=25c : 8.8 m typ. -v gs , gate-source voltage(v) r ds(on) , static drain-source on- state resistance(m) i d =-14a
cystech electronics corp. spec. no. : c913q8 issued date : 2013.06.18 revised date : page no. : 5/9 MTP4463Q8 cystek product specification typical characteristics(cont.) capacitance vs drain-to-source voltage 100 1000 10000 0.1 1 10 100 -v ds , drain-source voltage(v) capacitance---(pf) c oss ciss crss normalized threshold voltage vs junction tempearture 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 -75 -50 -25 0 25 50 75 100 125 150 175 tj, junction temperature(c) -v gs( th) , normalized threshold voltage i d =-250 a i d =-1ma forward transfer admittance vs drain current 0.1 1 10 100 0.01 0.1 1 10 100 -i d , drain current(a) g fs , forward transfer admittance(s) v ds =-10v pulsed t a =25c gate charge characteristics 0 1 2 3 4 5 0 5 10 15 20 25 30 35 40 qg, total gate charge(nc) -v gs , gate-source voltage(v) v ds =-10v i d =-15a maximum safe operating area 0.01 0.1 1 10 100 0.1 1 10 100 -i d , drain-source voltage(v) -i d , drain current(a) dc 10ms 100ms 1ms 100 s t a =25c, tj=150c, v gs =-10v ja =40c/w, single pulse 1s maximum drain current vs junction temperature 0 2 4 6 8 10 12 14 16 18 25 50 75 100 125 150 175 tj, junction temperature(c) -i d , maximum drain current(a) t a =25c, v gs =-10v
cystech electronics corp. spec. no. : c913q8 issued date : 2013.06.18 revised date : page no. : 6/9 MTP4463Q8 cystek product specification typical characteristics(cont.) single pulse power rating, junction to ambient (note on page 2) 0 50 100 150 200 250 300 0.001 0.01 0.1 1 10 100 pulse width(s) power (w) t j( max) =150c t a =25c ja =40c/w typical transfer characteristics 0 10 20 30 40 50 60 01234 -v gs , gate-source voltage(v) -i d , drain current(a) v ds =-10v transient thermal response curves 0.001 0.01 0.1 1 10 0.0001 0.001 0.01 0.1 1 10 100 1000 t 1 , square wave pulse duration(s) r(t), normalized transient thermal resistance single pulse 0.01 0.02 0.05 0.1 0.2 d=0.5 1.r ja (t)=r(t)*r ja 2.duty factor, d=t1/t2 3.t jm -t a =p dm *r ja (t) 4.r ja =40c/w
cystech electronics corp. spec. no. : c913q8 issued date : 2013.06.18 revised date : page no. : 7/9 MTP4463Q8 cystek product specification reel dimension carrier tape dimension
cystech electronics corp. spec. no. : c913q8 issued date : 2013.06.18 revised date : page no. : 8/9 MTP4463Q8 cystek product specification recommended wave soldering condition product peak temperature soldering time pb-free devices 260 +0/-5 c 5 +1/-1 seconds recommended temperature profile for ir reflow profile feature sn-pb eutectic assembly pb-free assembly average ramp-up rate (tsmax to tp) 3 c/second max. 3 c/second max. preheat ? temperature min(t s min) ? temperature max(t s max) ? time(ts min to ts max ) 100 c 150 c 60-120 seconds 150 c 200 c 60-180 seconds time maintained above: ? temperature (t l ) ? time (t l ) 183 c 60-150 seconds 217 c 60-150 seconds peak temperature(t p ) 240 +0/-5 c 260 +0/-5 c time within 5 c of actual peak temperature(tp) 10-30 seconds 20-40 seconds ramp down rate 6 c/second max. 6 c/second max. time 25 c to peak temperature 6 minutes max. 8 minutes max. note : all temperatures refer to topside of t he package, measured on the package body surface.
cystech electronics corp. spec. no. : c913q8 issued date : 2013.06.18 revised date : page no. : 9/9 MTP4463Q8 cystek product specification sop-8 dimension *: typical inches marking: 8-lead sop-8 plastic package cystek packa g e code: q8 top view a b front view f c d e g part a i h j k o m l n right side view part a date code device name 4463 millimeters inches millimeters dim min. max. min. max. dim min. max. min. max. a 0.1909 0.2007 4.85 5.10 i 0.0019 0.0078 0.05 0.20 b 0.1515 0.1555 3.85 3.95 j 0.0118 0.0275 0.30 0.70 c 0.2283 0.2441 5.80 6.20 k 0.0074 0.0098 0.19 0.25 d 0.0480 0.0519 1.22 1.32 l 0.0145 0.0204 0.37 0.52 e 0.0145 0.0185 0.37 0.47 m 0.0118 0.0197 0.30 0.50 f 0.1472 0.1527 3.74 3.88 n 0.0031 0.0051 0.08 0.13 g 0.0570 0.0649 1.45 1.65 o 0.0000 0.0059 0.00 0.15 h 0.1889 0.2007 4.80 5.10 notes: 1.controlling dimension: millimeters. 2.maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.if there is any question with packing specification or packing method, please c ontact your local cystek sales office. material: ? lead: pure tin plated. ? mold compound: epoxy resin family, flammability solid burning class: ul94v-0. important notice: ? all rights are reserved. reproduction in whole or in part is prohibited without the prior written approval of cystek. ? cystek reserves the right to make changes to its products without notice. ? cystek semiconductor products are not warranted to be suitable for use in life-support applications, or systems. ? cystek assumes no liability for any consequence of customer pr oduct design, infringement of pat ents, or application assistance .
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